SG73615A1 - Method and structure for contact to copper metallization in an insulating via on a semiconductor - Google Patents

Method and structure for contact to copper metallization in an insulating via on a semiconductor

Info

Publication number
SG73615A1
SG73615A1 SG1999001011A SG1999001011A SG73615A1 SG 73615 A1 SG73615 A1 SG 73615A1 SG 1999001011 A SG1999001011 A SG 1999001011A SG 1999001011 A SG1999001011 A SG 1999001011A SG 73615 A1 SG73615 A1 SG 73615A1
Authority
SG
Singapore
Prior art keywords
semiconductor
contact
copper metallization
insulating via
insulating
Prior art date
Application number
SG1999001011A
Inventor
Edward C Cooney
Stephen E Luce
William Joseph Cote
Ronald D Goldblatt
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG73615A1 publication Critical patent/SG73615A1/en

Links

SG1999001011A 1998-02-27 1999-02-23 Method and structure for contact to copper metallization in an insulating via on a semiconductor SG73615A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3163098A 1998-02-27 1998-02-27

Publications (1)

Publication Number Publication Date
SG73615A1 true SG73615A1 (en) 2000-06-20

Family

ID=21860551

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1999001011A SG73615A1 (en) 1998-02-27 1999-02-23 Method and structure for contact to copper metallization in an insulating via on a semiconductor

Country Status (5)

Country Link
JP (1) JPH11312734A (en)
KR (1) KR19990072296A (en)
CN (1) CN1149654C (en)
SG (1) SG73615A1 (en)
TW (1) TW396429B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223549A (en) 1999-01-29 2000-08-11 Canon Inc Substrate carrier, substrate carrying method, hand mechanism for carrying substrate, ashing apparatus and ashing method
KR100445551B1 (en) * 2001-12-21 2004-08-25 동부전자 주식회사 Method of remove a residual metal-oxidation product of a semiconductor device fabrication process
JP3734447B2 (en) * 2002-01-18 2006-01-11 富士通株式会社 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
JP2004087807A (en) * 2002-08-27 2004-03-18 Fujitsu Ltd Semiconductor device and method for manufacturing the same
US7223691B2 (en) * 2004-10-14 2007-05-29 International Business Machines Corporation Method of forming low resistance and reliable via in inter-level dielectric interconnect
CN101630656B (en) * 2008-07-15 2012-01-25 中芯国际集成电路制造(上海)有限公司 Methods for forming contact hole and dual damascene structure
US8049327B2 (en) * 2009-01-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with scalloped sidewalls
JP2010153897A (en) * 2010-02-22 2010-07-08 Fujitsu Semiconductor Ltd Method for producing semiconductor device
US20230298869A1 (en) * 2020-08-27 2023-09-21 Lam Research Corporation Subtractive copper etch

Also Published As

Publication number Publication date
CN1149654C (en) 2004-05-12
KR19990072296A (en) 1999-09-27
JPH11312734A (en) 1999-11-09
TW396429B (en) 2000-07-01
CN1227409A (en) 1999-09-01

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