SG54526A1 - Memory cell having negative differential resistance devices - Google Patents
Memory cell having negative differential resistance devicesInfo
- Publication number
- SG54526A1 SG54526A1 SG1997002334A SG1997002334A SG54526A1 SG 54526 A1 SG54526 A1 SG 54526A1 SG 1997002334 A SG1997002334 A SG 1997002334A SG 1997002334 A SG1997002334 A SG 1997002334A SG 54526 A1 SG54526 A1 SG 54526A1
- Authority
- SG
- Singapore
- Prior art keywords
- memory cell
- negative differential
- differential resistance
- resistance devices
- devices
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2116596P | 1996-07-01 | 1996-07-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG54526A1 true SG54526A1 (en) | 1998-11-16 |
Family
ID=21802720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1997002334A SG54526A1 (en) | 1996-07-01 | 1997-07-01 | Memory cell having negative differential resistance devices |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0817199B1 (fr) |
JP (1) | JP3884536B2 (fr) |
KR (1) | KR100450362B1 (fr) |
DE (1) | DE69717352T2 (fr) |
SG (1) | SG54526A1 (fr) |
TW (1) | TW400636B (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003051184A (ja) * | 2001-08-06 | 2003-02-21 | Nec Corp | メモリ装置 |
US9536886B2 (en) * | 2015-03-02 | 2017-01-03 | Samsung Electronics Co., Ltd. | CMOS compatible resonant interband tunneling cell |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661454A (ja) * | 1992-08-10 | 1994-03-04 | Hitachi Ltd | 半導体集積回路装置 |
US5390145A (en) * | 1993-04-15 | 1995-02-14 | Fujitsu Limited | Resonance tunnel diode memory |
-
1997
- 1997-07-01 EP EP97110765A patent/EP0817199B1/fr not_active Expired - Lifetime
- 1997-07-01 JP JP21111197A patent/JP3884536B2/ja not_active Expired - Fee Related
- 1997-07-01 SG SG1997002334A patent/SG54526A1/en unknown
- 1997-07-01 DE DE69717352T patent/DE69717352T2/de not_active Expired - Lifetime
- 1997-07-01 KR KR1019970030495A patent/KR100450362B1/ko not_active IP Right Cessation
- 1997-10-06 TW TW086109356A patent/TW400636B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0817199B1 (fr) | 2002-11-27 |
TW400636B (en) | 2000-08-01 |
EP0817199A2 (fr) | 1998-01-07 |
KR980011423A (ko) | 1998-04-30 |
KR100450362B1 (ko) | 2004-11-26 |
JPH1069766A (ja) | 1998-03-10 |
EP0817199A3 (fr) | 1999-10-13 |
JP3884536B2 (ja) | 2007-02-21 |
DE69717352T2 (de) | 2003-06-26 |
DE69717352D1 (de) | 2003-01-09 |
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