SG54345A1 - Method of depositing a stable fluorinated teos film - Google Patents

Method of depositing a stable fluorinated teos film

Info

Publication number
SG54345A1
SG54345A1 SG1996010125A SG1996010125A SG54345A1 SG 54345 A1 SG54345 A1 SG 54345A1 SG 1996010125 A SG1996010125 A SG 1996010125A SG 1996010125 A SG1996010125 A SG 1996010125A SG 54345 A1 SG54345 A1 SG 54345A1
Authority
SG
Singapore
Prior art keywords
depositing
teos film
stable fluorinated
fluorinated teos
stable
Prior art date
Application number
SG1996010125A
Other languages
English (en)
Inventor
Daniel A Carl
Shari Schuchmann
Original Assignee
Novellus Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novellus Systems Inc filed Critical Novellus Systems Inc
Publication of SG54345A1 publication Critical patent/SG54345A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
SG1996010125A 1995-06-23 1996-06-21 Method of depositing a stable fluorinated teos film SG54345A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49461695A 1995-06-23 1995-06-23

Publications (1)

Publication Number Publication Date
SG54345A1 true SG54345A1 (en) 1998-11-16

Family

ID=23965224

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996010125A SG54345A1 (en) 1995-06-23 1996-06-21 Method of depositing a stable fluorinated teos film

Country Status (4)

Country Link
EP (1) EP0759481A1 (de)
JP (1) JPH09106986A (de)
KR (1) KR0182830B1 (de)
SG (1) SG54345A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042901A (en) * 1996-02-20 2000-03-28 Lam Research Corporation Method for depositing fluorine doped silicon dioxide films
TW335511B (en) * 1996-08-02 1998-07-01 Applied Materials Inc Stress control by fluorination of silica film
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
US6277203B1 (en) 1998-09-29 2001-08-21 Lam Research Corporation Method and apparatus for cleaning low K dielectric and metal wafer surfaces
JP3818561B2 (ja) * 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法
JP3492634B2 (ja) * 1999-03-17 2004-02-03 インフィネオン テクノロジース エスシー３００ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト 半導体ウェーハ上のギャップの充填方法
KR100541541B1 (ko) * 1999-08-26 2006-01-12 삼성전자주식회사 플라즈마 증착장비의 프로세스 챔버
US6410457B1 (en) 1999-09-01 2002-06-25 Applied Materials, Inc. Method for improving barrier layer adhesion to HDP-FSG thin films
EP1128421A3 (de) * 2000-02-28 2002-03-06 Canon Sales Co., Inc. Verfahren zur Herstellung einer Zwischenisolationsschicht mit Si, O, C und H für Halbleiterbauelemente
JP3419745B2 (ja) 2000-02-28 2003-06-23 キヤノン販売株式会社 半導体装置及びその製造方法
US6511922B2 (en) 2001-03-26 2003-01-28 Applied Materials, Inc. Methods and apparatus for producing stable low k FSG film for HDP-CVD
CN106148917B (zh) * 2015-04-03 2019-01-22 中芯国际集成电路制造(上海)有限公司 利用pecvd工艺淀积薄膜的方法和pecvd装置
CN109487234A (zh) * 2018-12-18 2019-03-19 湖北大学 超疏油涂层及其制备方法和应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
GB2256967B (en) * 1991-06-17 1995-03-29 Motorola Inc Method of depositing a pecvd teos oxide film

Also Published As

Publication number Publication date
JPH09106986A (ja) 1997-04-22
EP0759481A1 (de) 1997-02-26
KR0182830B1 (ko) 1999-04-15
KR970001612A (ko) 1997-01-24

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