SG47620A1 - Epitaxial semiconductor material and method for fabricating same - Google Patents
Epitaxial semiconductor material and method for fabricating sameInfo
- Publication number
- SG47620A1 SG47620A1 SG1996003229A SG1996003229A SG47620A1 SG 47620 A1 SG47620 A1 SG 47620A1 SG 1996003229 A SG1996003229 A SG 1996003229A SG 1996003229 A SG1996003229 A SG 1996003229A SG 47620 A1 SG47620 A1 SG 47620A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor material
- epitaxial semiconductor
- fabricating same
- fabricating
- same
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/082,951 US5342805A (en) | 1993-07-01 | 1993-07-01 | Method of growing a semiconductor material by epilaxy |
Publications (1)
Publication Number | Publication Date |
---|---|
SG47620A1 true SG47620A1 (en) | 1998-04-17 |
Family
ID=22174496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996003229A SG47620A1 (en) | 1993-07-01 | 1994-04-20 | Epitaxial semiconductor material and method for fabricating same |
Country Status (8)
Country | Link |
---|---|
US (1) | US5342805A (de) |
EP (1) | EP0632486B1 (de) |
JP (1) | JP2638737B2 (de) |
KR (1) | KR0166989B1 (de) |
DE (1) | DE69425787T2 (de) |
HK (1) | HK1011793A1 (de) |
SG (1) | SG47620A1 (de) |
TW (1) | TW228608B (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640043A (en) | 1995-12-20 | 1997-06-17 | General Instrument Corporation Of Delaware | High voltage silicon diode with optimum placement of silicon-germanium layers |
WO1999053553A2 (en) | 1998-04-09 | 1999-10-21 | Koninklijke Philips Electronics N.V. | Semiconductor device having a rectifying junction and method of manufacturing same |
US6858503B1 (en) * | 2003-02-05 | 2005-02-22 | Advanced Micro Devices, Inc. | Depletion to avoid cross contamination |
JP5067381B2 (ja) * | 2009-02-19 | 2012-11-07 | 東京エレクトロン株式会社 | 熱処理装置の運転方法 |
JP2015149346A (ja) * | 2014-02-05 | 2015-08-20 | 三菱電機株式会社 | 半導体装置の製造方法および半導体装置 |
EP3111520B1 (de) | 2014-02-25 | 2020-07-08 | Koninklijke Philips N.V. | Lichtemittierende halbleitervorrichtungen mit getterschicht |
WO2016051973A1 (ja) | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7313201B2 (ja) * | 2019-06-14 | 2023-07-24 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5084411A (en) * | 1988-11-29 | 1992-01-28 | Hewlett-Packard Company | Semiconductor processing with silicon cap over Si1-x Gex Film |
JPH02235327A (ja) * | 1989-03-08 | 1990-09-18 | Fujitsu Ltd | 半導体成長装置および半導体成長方法 |
US5102810A (en) | 1990-03-13 | 1992-04-07 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
US5097308A (en) * | 1990-03-13 | 1992-03-17 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
DE4119531A1 (de) * | 1991-06-13 | 1992-12-17 | Wacker Chemitronic | Epitaxierte halbleiterscheiben mit sauerstoffarmer zone einstellbarer ausdehnung und verfahren zu ihrer herstellung |
-
1993
- 1993-07-01 US US08/082,951 patent/US5342805A/en not_active Expired - Lifetime
- 1993-07-13 TW TW082105580A patent/TW228608B/zh active
- 1993-09-13 JP JP5227114A patent/JP2638737B2/ja not_active Expired - Lifetime
-
1994
- 1994-04-14 KR KR1019940007815A patent/KR0166989B1/ko not_active IP Right Cessation
- 1994-04-20 SG SG1996003229A patent/SG47620A1/en unknown
- 1994-04-20 EP EP94302800A patent/EP0632486B1/de not_active Expired - Lifetime
- 1994-04-20 DE DE69425787T patent/DE69425787T2/de not_active Expired - Fee Related
-
1998
- 1998-11-30 HK HK98112569A patent/HK1011793A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0737815A (ja) | 1995-02-07 |
EP0632486A3 (de) | 1995-03-29 |
TW228608B (en) | 1994-08-21 |
HK1011793A1 (en) | 1999-07-16 |
DE69425787T2 (de) | 2001-01-04 |
EP0632486A2 (de) | 1995-01-04 |
EP0632486B1 (de) | 2000-09-06 |
JP2638737B2 (ja) | 1997-08-06 |
US5342805A (en) | 1994-08-30 |
DE69425787D1 (de) | 2000-10-12 |
KR950004579A (ko) | 1995-02-18 |
KR0166989B1 (ko) | 1999-01-15 |
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