SG47090A1 - Plasma processing method and apparatus - Google Patents

Plasma processing method and apparatus

Info

Publication number
SG47090A1
SG47090A1 SG1996006453A SG1996006453A SG47090A1 SG 47090 A1 SG47090 A1 SG 47090A1 SG 1996006453 A SG1996006453 A SG 1996006453A SG 1996006453 A SG1996006453 A SG 1996006453A SG 47090 A1 SG47090 A1 SG 47090A1
Authority
SG
Singapore
Prior art keywords
processing method
plasma processing
plasma
processing
Prior art date
Application number
SG1996006453A
Other languages
English (en)
Inventor
Katsuyoshi Kudo
Tadamitsu Kanekiyo
Yoshiaki Satou
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG47090A1 publication Critical patent/SG47090A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
SG1996006453A 1995-03-20 1996-03-20 Plasma processing method and apparatus SG47090A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6038395 1995-03-20

Publications (1)

Publication Number Publication Date
SG47090A1 true SG47090A1 (en) 1998-03-20

Family

ID=13140580

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996006453A SG47090A1 (en) 1995-03-20 1996-03-20 Plasma processing method and apparatus

Country Status (5)

Country Link
US (1) US5961850A (ko)
EP (1) EP0734047A3 (ko)
KR (1) KR100399542B1 (ko)
SG (1) SG47090A1 (ko)
TW (1) TW297135B (ko)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6092486A (en) * 1996-05-27 2000-07-25 Sumimoto Metal Indsutries, Ltd. Plasma processing apparatus and plasma processing method
US6176929B1 (en) * 1997-07-22 2001-01-23 Ebara Corporation Thin-film deposition apparatus
US6129807A (en) * 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6201219B1 (en) * 1998-02-25 2001-03-13 Micron Technology, Inc. Chamber and cleaning process therefor
JP3764594B2 (ja) * 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
JP2000124195A (ja) * 1998-10-14 2000-04-28 Tokyo Electron Ltd 表面処理方法及びその装置
US6221203B1 (en) * 1999-06-01 2001-04-24 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for controlling temperature of a chamber
US6547922B2 (en) * 2000-01-31 2003-04-15 Canon Kabushiki Kaisha Vacuum-processing apparatus using a movable cooling plate during processing
US6666924B1 (en) * 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
JP4308018B2 (ja) * 2002-02-01 2009-08-05 東京エレクトロン株式会社 エッチング方法
JP4043488B2 (ja) * 2003-02-04 2008-02-06 東京エレクトロン株式会社 処理システム及び処理システムの稼動方法
JP4058364B2 (ja) * 2003-03-18 2008-03-05 株式会社日立製作所 半導体製造装置
US8540843B2 (en) 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US20060000551A1 (en) * 2004-06-30 2006-01-05 Saldana Miguel A Methods and apparatus for optimal temperature control in a plasma processing system
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
JP4997842B2 (ja) * 2005-10-18 2012-08-08 東京エレクトロン株式会社 処理装置
KR100698927B1 (ko) * 2005-12-13 2007-03-23 주식회사 래디언테크 플라즈마 처리 방법
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20100183818A1 (en) * 2006-09-06 2010-07-22 Seoul National University Industry Foundation Apparatus and method of depositing films using bias and charging behavior of nanoparticles formed during chemical vapor deposition
GB2462589B (en) * 2008-08-04 2013-02-20 Sony Comp Entertainment Europe Apparatus and method of viewing electronic documents
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
CN103165368B (zh) * 2011-12-16 2016-02-03 中微半导体设备(上海)有限公司 一种温度可调的等离子体约束装置
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
KR102323320B1 (ko) * 2015-05-13 2021-11-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056431B2 (ja) * 1980-10-09 1985-12-10 三菱電機株式会社 プラズマエツチング装置
US5102496A (en) * 1989-09-26 1992-04-07 Applied Materials, Inc. Particulate contamination prevention using low power plasma
JPH03167825A (ja) * 1989-11-28 1991-07-19 Matsushita Electric Ind Co Ltd エッチング装置およびエッチング方法
JP2532401Y2 (ja) * 1991-04-16 1997-04-16 ソニー株式会社 バイアスｅｃｒプラズマｃｖｄ装置
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US5368685A (en) * 1992-03-24 1994-11-29 Hitachi, Ltd. Dry etching apparatus and method
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置
JPH06188220A (ja) * 1992-12-18 1994-07-08 Hitachi Ltd マイクロ波プラズマ処理方法及び装置
KR0141659B1 (ko) * 1993-07-19 1998-07-15 가나이 쓰토무 이물제거 방법 및 장치
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus

Also Published As

Publication number Publication date
KR100399542B1 (ko) 2004-01-07
KR960035872A (ko) 1996-10-28
US5961850A (en) 1999-10-05
TW297135B (ko) 1997-02-01
EP0734047A3 (en) 1997-04-02
EP0734047A2 (en) 1996-09-25

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