SG44894G - Electrically pumped vertical cavity laser - Google Patents

Electrically pumped vertical cavity laser

Info

Publication number
SG44894G
SG44894G SG44894A SG44894A SG44894G SG 44894 G SG44894 G SG 44894G SG 44894 A SG44894 A SG 44894A SG 44894 A SG44894 A SG 44894A SG 44894 G SG44894 G SG 44894G
Authority
SG
Singapore
Prior art keywords
vertical cavity
cavity laser
electrically pumped
pumped vertical
electrically
Prior art date
Application number
SG44894A
Other languages
English (en)
Inventor
Dennis G Deppe
Russell J Fischer
Kai-Feng Huang
Kuochou Tai
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US07/343,760 priority Critical patent/US4991179A/en
Priority to CA002008899A priority patent/CA2008899C/en
Priority to DE69006087T priority patent/DE69006087T2/de
Priority to EP90304256A priority patent/EP0395315B1/en
Priority to JP2107735A priority patent/JPH07105572B2/ja
Priority to KR1019900005802A priority patent/KR940001793B1/ko
Application filed by At & T Corp filed Critical At & T Corp
Priority to SG44894A priority patent/SG44894G/en
Priority to HK108194A priority patent/HK108194A/xx
Publication of SG44894G publication Critical patent/SG44894G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Lasers (AREA)
SG44894A 1989-04-26 1994-03-26 Electrically pumped vertical cavity laser SG44894G (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US07/343,760 US4991179A (en) 1989-04-26 1989-04-26 Electrically pumped vertical cavity laser
CA002008899A CA2008899C (en) 1989-04-26 1990-01-30 Electrically pumped vertical cavity laser
DE69006087T DE69006087T2 (de) 1989-04-26 1990-04-20 Elektrisch gepumpter Laser mit senkrechtem Resonator.
EP90304256A EP0395315B1 (en) 1989-04-26 1990-04-20 Electrically pumped vertical cavity laser
JP2107735A JPH07105572B2 (ja) 1989-04-26 1990-04-25 電気励起キャビティ・レーザ装置
KR1019900005802A KR940001793B1 (ko) 1989-04-26 1990-04-25 전기적으로 펌핑되는 수직 캐비티 레이저장치
SG44894A SG44894G (en) 1989-04-26 1994-03-26 Electrically pumped vertical cavity laser
HK108194A HK108194A (en) 1989-04-26 1994-10-06 Electrically pumped vertical cavity laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/343,760 US4991179A (en) 1989-04-26 1989-04-26 Electrically pumped vertical cavity laser
SG44894A SG44894G (en) 1989-04-26 1994-03-26 Electrically pumped vertical cavity laser

Publications (1)

Publication Number Publication Date
SG44894G true SG44894G (en) 1995-03-17

Family

ID=26663995

Family Applications (1)

Application Number Title Priority Date Filing Date
SG44894A SG44894G (en) 1989-04-26 1994-03-26 Electrically pumped vertical cavity laser

Country Status (8)

Country Link
US (1) US4991179A (ko)
EP (1) EP0395315B1 (ko)
JP (1) JPH07105572B2 (ko)
KR (1) KR940001793B1 (ko)
CA (1) CA2008899C (ko)
DE (1) DE69006087T2 (ko)
HK (1) HK108194A (ko)
SG (1) SG44894G (ko)

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DE69124338T2 (de) * 1990-11-02 1997-07-31 Norikatsu Yamauchi Halbleitervorrichtung mit reflektierender Schicht
US5313324A (en) * 1991-03-27 1994-05-17 Massachusetts Institute Of Technology Solid state optical converter
JPH04333290A (ja) * 1991-05-08 1992-11-20 Nec Corp 垂直共振器型面発光レーザおよび垂直共振器型面入出力光電融合素子
US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
US5206872A (en) * 1991-11-01 1993-04-27 At&T Bell Laboratories Surface emitting laser
US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
FR2685098B1 (fr) * 1991-12-12 1995-02-10 Andre Schiltz Procede de montage et de couplage optique sur un substrat et substrat equipe d'une fibre optique.
US5408105A (en) * 1992-02-19 1995-04-18 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device with mesa
US5325386A (en) * 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
DE4240706A1 (de) * 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
JPH06347734A (ja) * 1993-06-11 1994-12-22 Nec Corp 面型光スイッチ
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
US5432809A (en) * 1994-06-15 1995-07-11 Motorola, Inc. VCSEL with Al-free cavity region
FR2724056B1 (fr) * 1994-08-23 1996-11-15 France Telecom Composant optique, optoelectronique ou photonique comportant au moins une cavite optique confinee lateralement et procede pour sa realisation
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6696308B1 (en) * 2000-10-27 2004-02-24 Chan-Long Shieh Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
US6671304B2 (en) 2001-08-28 2003-12-30 The United States Of America As Represented By The Secretary Of The Navy Amplitude-modulated laser for high-bandwidth communications systems
DE102004057802B4 (de) * 2004-11-30 2011-03-24 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht
DE102006004591A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
US7970022B2 (en) * 2006-01-20 2011-06-28 Massachusetts Institute Of Technology Surface-emitting fiber laser
WO2007105626A1 (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works, Ltd. 発光素子
US7772615B2 (en) * 2007-08-10 2010-08-10 Connector Optics Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon
EP3289979B1 (en) * 2013-03-15 2023-03-01 Praevium Research, Inc. Widely tunable swept source
CA2907165C (en) 2013-03-15 2022-08-23 Praevium Research, Inc. Tunable laser array system
JP2017216348A (ja) * 2016-05-31 2017-12-07 三菱電機株式会社 端面出射型半導体レーザ
CN113675726A (zh) * 2021-10-21 2021-11-19 福建慧芯激光科技有限公司 一种高速垂直腔面发射激光器的外延结构

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US4163953A (en) * 1977-07-07 1979-08-07 Northern Telecom Limited Double heterostructure laser for direct coupling to an optical fiber
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US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser

Also Published As

Publication number Publication date
US4991179A (en) 1991-02-05
EP0395315B1 (en) 1994-01-19
KR900017241A (ko) 1990-11-15
EP0395315A2 (en) 1990-10-31
EP0395315A3 (en) 1991-09-11
CA2008899A1 (en) 1990-10-26
JPH02302085A (ja) 1990-12-14
DE69006087T2 (de) 1994-05-26
DE69006087D1 (de) 1994-03-03
HK108194A (en) 1994-10-14
JPH07105572B2 (ja) 1995-11-13
KR940001793B1 (ko) 1994-03-05
CA2008899C (en) 1994-02-01

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