SG43376A1 - A stacked electrical device having regions of electrical isolation and electrical connection on a given stack level and related methods for its manufacture - Google Patents
A stacked electrical device having regions of electrical isolation and electrical connection on a given stack level and related methods for its manufactureInfo
- Publication number
- SG43376A1 SG43376A1 SG1996010140A SG1996010140A SG43376A1 SG 43376 A1 SG43376 A1 SG 43376A1 SG 1996010140 A SG1996010140 A SG 1996010140A SG 1996010140 A SG1996010140 A SG 1996010140A SG 43376 A1 SG43376 A1 SG 43376A1
- Authority
- SG
- Singapore
- Prior art keywords
- electrical
- regions
- manufacture
- related methods
- stacked
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/540,387 US5602051A (en) | 1995-10-06 | 1995-10-06 | Method of making stacked electrical device having regions of electrical isolation and electrical connection on a given stack level |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG43376A1 true SG43376A1 (en) | 1997-10-17 |
Family
ID=24155241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1996010140A SG43376A1 (en) | 1995-10-06 | 1996-06-24 | A stacked electrical device having regions of electrical isolation and electrical connection on a given stack level and related methods for its manufacture |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US5602051A (OSRAM) |
| EP (1) | EP0767493A2 (OSRAM) |
| JP (1) | JP3245070B2 (OSRAM) |
| KR (1) | KR100214915B1 (OSRAM) |
| SG (1) | SG43376A1 (OSRAM) |
| TW (1) | TW318269B (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08293543A (ja) * | 1995-04-25 | 1996-11-05 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6429473B1 (en) * | 1996-07-30 | 2002-08-06 | International Business Machines Corporation | DRAM cell with stacked capacitor self-aligned to bitline |
| JPH10173046A (ja) * | 1996-12-10 | 1998-06-26 | Sony Corp | 半導体装置の製造方法 |
| JPH10189898A (ja) * | 1996-12-24 | 1998-07-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP3577195B2 (ja) | 1997-05-15 | 2004-10-13 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| US6104054A (en) * | 1998-05-13 | 2000-08-15 | Texas Instruments Incorporated | Space-efficient layout method to reduce the effect of substrate capacitance in dielectrically isolated process technologies |
| FR2785720B1 (fr) * | 1998-11-05 | 2003-01-03 | St Microelectronics Sa | Fabrication de memoire dram et de transistors mos |
| JP3626058B2 (ja) * | 2000-01-25 | 2005-03-02 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6507063B2 (en) | 2000-04-17 | 2003-01-14 | International Business Machines Corporation | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer |
| JP3953715B2 (ja) * | 2000-07-31 | 2007-08-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US6563162B2 (en) * | 2001-03-21 | 2003-05-13 | Samsung Electronics Co., Ltd. | Semiconductor memory device for reducing parasitic bit line capacitance and method of fabricating the same |
| US20040163445A1 (en) * | 2002-10-17 | 2004-08-26 | Dimeo Frank | Apparatus and process for sensing fluoro species in semiconductor processing systems |
| US7080545B2 (en) * | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
| US7296458B2 (en) * | 2002-10-17 | 2007-11-20 | Advanced Technology Materials, Inc | Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same |
| KR100797896B1 (ko) * | 2004-11-12 | 2008-01-24 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 다양한 동작 전압들을 갖는 집적 회로들을 절연시키기 위한반도체 구조 |
| KR100668833B1 (ko) * | 2004-12-17 | 2007-01-16 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
| US20060211253A1 (en) * | 2005-03-16 | 2006-09-21 | Ing-Shin Chen | Method and apparatus for monitoring plasma conditions in an etching plasma processing facility |
| US10147735B2 (en) * | 2015-03-13 | 2018-12-04 | Toshiba Memory Corporation | Semiconductor memory device and production method thereof |
| KR102490277B1 (ko) * | 2017-09-26 | 2023-01-18 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR20230067339A (ko) | 2021-11-09 | 2023-05-16 | 삼성전자주식회사 | 집적회로 소자 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5237528A (en) * | 1982-11-04 | 1993-08-17 | Hitachi, Ltd. | Semiconductor memory |
| US5214496A (en) * | 1982-11-04 | 1993-05-25 | Hitachi, Ltd. | Semiconductor memory |
| JP2602219B2 (ja) * | 1987-02-06 | 1997-04-23 | 株式会社日立製作所 | 半導体記憶装置 |
| KR920005632B1 (ko) * | 1987-03-20 | 1992-07-10 | 가부시기가이샤 히다찌세이사꾸쇼 | 다층 산화 실리콘 질화 실리콘 유전체의 반도체장치 및 그의 제조방법 |
| US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
| JPH0821682B2 (ja) * | 1987-04-24 | 1996-03-04 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US5264712A (en) * | 1989-03-20 | 1993-11-23 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
| JP2590171B2 (ja) * | 1988-01-08 | 1997-03-12 | 株式会社日立製作所 | 半導体記憶装置 |
| US5140389A (en) * | 1988-01-08 | 1992-08-18 | Hitachi, Ltd. | Semiconductor memory device having stacked capacitor cells |
| JPH0414868A (ja) * | 1990-05-09 | 1992-01-20 | Hitachi Ltd | 半導体記憶装置とその製造方法 |
| JPH04342164A (ja) * | 1991-05-20 | 1992-11-27 | Hitachi Ltd | 半導体集積回路装置の形成方法 |
| US5338700A (en) * | 1993-04-14 | 1994-08-16 | Micron Semiconductor, Inc. | Method of forming a bit line over capacitor array of memory cells |
| US5478772A (en) * | 1993-04-02 | 1995-12-26 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US5340765A (en) * | 1993-08-13 | 1994-08-23 | Micron Semiconductor, Inc. | Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon |
| KR970000229B1 (ko) * | 1993-08-30 | 1997-01-06 | 현대전자산업 주식회사 | 디램 캐패시터의 제조방법 |
-
1995
- 1995-10-06 US US08/540,387 patent/US5602051A/en not_active Expired - Fee Related
-
1996
- 1996-06-13 TW TW085107117A patent/TW318269B/zh active
- 1996-06-24 SG SG1996010140A patent/SG43376A1/en unknown
- 1996-07-26 US US08/686,881 patent/US5804853A/en not_active Expired - Fee Related
- 1996-09-04 KR KR1019960038200A patent/KR100214915B1/ko not_active Expired - Fee Related
- 1996-09-12 EP EP96306640A patent/EP0767493A2/en not_active Withdrawn
- 1996-09-17 JP JP24438596A patent/JP3245070B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5804853A (en) | 1998-09-08 |
| TW318269B (OSRAM) | 1997-10-21 |
| KR970024220A (ko) | 1997-05-30 |
| US5602051A (en) | 1997-02-11 |
| EP0767493A2 (en) | 1997-04-09 |
| JPH09129851A (ja) | 1997-05-16 |
| KR100214915B1 (ko) | 1999-08-02 |
| JP3245070B2 (ja) | 2002-01-07 |
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