SG34348A1 - Multilayered A1-alloy structure for metal conductors - Google Patents
Multilayered A1-alloy structure for metal conductorsInfo
- Publication number
- SG34348A1 SG34348A1 SG1995002386A SG1995002386A SG34348A1 SG 34348 A1 SG34348 A1 SG 34348A1 SG 1995002386 A SG1995002386 A SG 1995002386A SG 1995002386 A SG1995002386 A SG 1995002386A SG 34348 A1 SG34348 A1 SG 34348A1
- Authority
- SG
- Singapore
- Prior art keywords
- multilayered
- alloy structure
- metal conductors
- conductors
- alloy
- Prior art date
Links
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000004020 conductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/365,652 US5561083A (en) | 1994-12-29 | 1994-12-29 | Method of making multilayered Al-alloy structure for metal conductors |
Publications (1)
Publication Number | Publication Date |
---|---|
SG34348A1 true SG34348A1 (en) | 1996-12-06 |
Family
ID=23439761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1995002386A SG34348A1 (en) | 1994-12-29 | 1995-12-28 | Multilayered A1-alloy structure for metal conductors |
Country Status (6)
Country | Link |
---|---|
US (2) | US5561083A (fr) |
EP (1) | EP0720231A3 (fr) |
JP (1) | JP3296708B2 (fr) |
KR (1) | KR960026410A (fr) |
SG (1) | SG34348A1 (fr) |
TW (1) | TW298675B (fr) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW520072U (en) * | 1991-07-08 | 2003-02-01 | Samsung Electronics Co Ltd | A semiconductor device having a multi-layer metal contact |
JP3744980B2 (ja) * | 1995-07-27 | 2006-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
SG55246A1 (en) * | 1995-12-29 | 1998-12-21 | Ibm | Aluminum alloy for the damascene process for on-chip wiring applications |
US5663108A (en) * | 1996-06-13 | 1997-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optimized metal pillar via process |
JPH1027797A (ja) * | 1996-07-10 | 1998-01-27 | Oki Electric Ind Co Ltd | Al/Ti積層配線およびその形成方法 |
KR100415095B1 (ko) * | 1996-11-27 | 2004-03-31 | 주식회사 하이닉스반도체 | 반도체소자의제조방법 |
US5943601A (en) * | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Process for fabricating a metallization structure |
DE19734434C1 (de) * | 1997-08-08 | 1998-12-10 | Siemens Ag | Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung |
JP3500308B2 (ja) | 1997-08-13 | 2004-02-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 集積回路 |
US6255688B1 (en) * | 1997-11-21 | 2001-07-03 | Agere Systems Guardian Corp. | Capacitor having aluminum alloy bottom plate |
US6380627B1 (en) * | 1998-06-26 | 2002-04-30 | The Regents Of The University Of California | Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication |
US6100195A (en) * | 1998-12-28 | 2000-08-08 | Chartered Semiconductor Manu. Ltd. | Passivation of copper interconnect surfaces with a passivating metal layer |
US6320265B1 (en) * | 1999-04-12 | 2001-11-20 | Lucent Technologies Inc. | Semiconductor device with high-temperature ohmic contact and method of forming the same |
US7230316B2 (en) | 2002-12-27 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having transferred integrated circuit |
US7628309B1 (en) * | 2005-05-03 | 2009-12-08 | Rosemount Aerospace Inc. | Transient liquid phase eutectic bonding |
US20070013014A1 (en) * | 2005-05-03 | 2007-01-18 | Shuwen Guo | High temperature resistant solid state pressure sensor |
US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
US7400042B2 (en) * | 2005-05-03 | 2008-07-15 | Rosemount Aerospace Inc. | Substrate with adhesive bonding metallization with diffusion barrier |
DE102016101801B4 (de) * | 2016-02-02 | 2021-01-14 | Infineon Technologies Ag | Lastanschluss eines leistungshalbleiterbauelements, leistungshalbleitermodul damit und herstellungsverfahren dafür |
KR20190001445U (ko) | 2017-12-08 | 2019-06-18 | 최재양 | 삽입식 샤워기 홀더 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55132056A (en) * | 1979-04-03 | 1980-10-14 | Toshiba Corp | Semiconductor device |
US4373966A (en) * | 1981-04-30 | 1983-02-15 | International Business Machines Corporation | Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering |
US4517225A (en) * | 1983-05-02 | 1985-05-14 | Signetics Corporation | Method for manufacturing an electrical interconnection by selective tungsten deposition |
US4673623A (en) * | 1985-05-06 | 1987-06-16 | The Board Of Trustees Of The Leland Stanford Junior University | Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects |
US4910580A (en) * | 1987-08-27 | 1990-03-20 | Siemens Aktiengesellschaft | Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy |
US4987562A (en) * | 1987-08-28 | 1991-01-22 | Fujitsu Limited | Semiconductor layer structure having an aluminum-silicon alloy layer |
JPH01185948A (ja) * | 1988-01-21 | 1989-07-25 | Seiko Epson Corp | 半導体装置 |
KR920005701B1 (ko) * | 1989-07-20 | 1992-07-13 | 현대전자산업 주식회사 | 반도체 집적회로 내의 소자 연결용 금속배선층 및 그 제조방법 |
JPH04363024A (ja) * | 1990-11-30 | 1992-12-15 | Toshiba Corp | 半導体装置の製造方法 |
US5345108A (en) * | 1991-02-26 | 1994-09-06 | Nec Corporation | Semiconductor device having multi-layer electrode wiring |
DE4200809C2 (de) * | 1991-03-20 | 1996-12-12 | Samsung Electronics Co Ltd | Verfahren zur Bildung einer metallischen Verdrahtungsschicht in einem Halbleiterbauelement |
KR940004256B1 (en) * | 1991-04-09 | 1994-05-19 | Samsung Electronics Co Ltd | Making method of semiconductor device |
TW520072U (en) * | 1991-07-08 | 2003-02-01 | Samsung Electronics Co Ltd | A semiconductor device having a multi-layer metal contact |
FR2678818B1 (fr) * | 1991-07-11 | 1995-07-13 | Olivier Ets Georges | Dispositif arrache-fils pour semelle de suceur d'aspirateur. |
KR960010056B1 (ko) * | 1992-12-10 | 1996-07-25 | 삼성전자 주식회사 | 반도체장치 및 그 제조 방법 |
US5427666A (en) * | 1993-09-09 | 1995-06-27 | Applied Materials, Inc. | Method for in-situ cleaning a Ti target in a Ti + TiN coating process |
US5360995A (en) * | 1993-09-14 | 1994-11-01 | Texas Instruments Incorporated | Buffered capped interconnect for a semiconductor device |
US5444022A (en) * | 1993-12-29 | 1995-08-22 | Intel Corporation | Method of fabricating an interconnection structure for an integrated circuit |
US5523259A (en) * | 1994-12-05 | 1996-06-04 | At&T Corp. | Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer |
-
1994
- 1994-12-29 US US08/365,652 patent/US5561083A/en not_active Expired - Lifetime
-
1995
- 1995-12-11 EP EP95308963A patent/EP0720231A3/fr not_active Withdrawn
- 1995-12-25 JP JP33625595A patent/JP3296708B2/ja not_active Expired - Fee Related
- 1995-12-28 KR KR1019950060927A patent/KR960026410A/ko not_active Application Discontinuation
- 1995-12-28 SG SG1995002386A patent/SG34348A1/en unknown
-
1996
- 1996-03-26 TW TW085103603A patent/TW298675B/zh not_active IP Right Cessation
- 1996-06-26 US US08/668,310 patent/US5641994A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5641994A (en) | 1997-06-24 |
TW298675B (fr) | 1997-02-21 |
US5561083A (en) | 1996-10-01 |
EP0720231A3 (fr) | 1996-12-11 |
JPH08236707A (ja) | 1996-09-13 |
EP0720231A2 (fr) | 1996-07-03 |
JP3296708B2 (ja) | 2002-07-02 |
KR960026410A (ko) | 1996-07-22 |
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