SG193340A1 - Chemical mechanical planarization pad conditioner - Google Patents
Chemical mechanical planarization pad conditioner Download PDFInfo
- Publication number
- SG193340A1 SG193340A1 SG2013067152A SG2013067152A SG193340A1 SG 193340 A1 SG193340 A1 SG 193340A1 SG 2013067152 A SG2013067152 A SG 2013067152A SG 2013067152 A SG2013067152 A SG 2013067152A SG 193340 A1 SG193340 A1 SG 193340A1
- Authority
- SG
- Singapore
- Prior art keywords
- protrusions
- pad conditioner
- subset
- substrate
- height
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 174
- 238000005498 polishing Methods 0.000 claims abstract description 66
- 239000010432 diamond Substances 0.000 claims abstract description 47
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 45
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 55
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 51
- 238000005520 cutting process Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 239000011148 porous material Substances 0.000 claims description 17
- 230000003746 surface roughness Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 description 46
- 230000003750 conditioning effect Effects 0.000 description 32
- 235000019592 roughness Nutrition 0.000 description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 28
- 229910002804 graphite Inorganic materials 0.000 description 25
- 239000010439 graphite Substances 0.000 description 25
- 238000009826 distribution Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 23
- 238000003754 machining Methods 0.000 description 22
- 239000000919 ceramic Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 21
- 239000010410 layer Substances 0.000 description 19
- 230000001788 irregular Effects 0.000 description 16
- 239000002245 particle Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000002002 slurry Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000005299 abrasion Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 230000000712 assembly Effects 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000002902 bimodal effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021426 porous silicon Inorganic materials 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000019587 texture Nutrition 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 235000012087 Psidium araca Nutrition 0.000 description 1
- 244000233562 Psidium araca Species 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161449851P | 2011-03-07 | 2011-03-07 | |
| US201161506483P | 2011-07-11 | 2011-07-11 | |
| US201161513294P | 2011-07-29 | 2011-07-29 | |
| PCT/US2012/027916 WO2012122186A2 (en) | 2011-03-07 | 2012-03-06 | Chemical mechanical planarization pad conditioner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG193340A1 true SG193340A1 (en) | 2013-10-30 |
Family
ID=46798753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013067152A SG193340A1 (en) | 2011-03-07 | 2012-03-06 | Chemical mechanical planarization pad conditioner |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9132526B2 (enExample) |
| EP (1) | EP2684211B1 (enExample) |
| JP (1) | JP6133218B2 (enExample) |
| KR (1) | KR101916492B1 (enExample) |
| CN (1) | CN103688343B (enExample) |
| SG (1) | SG193340A1 (enExample) |
| TW (1) | TWI592258B (enExample) |
| WO (1) | WO2012122186A2 (enExample) |
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| US20140120724A1 (en) * | 2005-05-16 | 2014-05-01 | Chien-Min Sung | Composite conditioner and associated methods |
| CN103688343B (zh) | 2011-03-07 | 2016-09-07 | 恩特格里公司 | 化学机械抛光垫修整器 |
| KR101144981B1 (ko) * | 2011-05-17 | 2012-05-11 | 삼성전자주식회사 | Ｃｍｐ 패드 컨디셔너 및 상기 ｃｍｐ 패드 컨디셔너 제조방법 |
| KR101339722B1 (ko) * | 2011-07-18 | 2013-12-10 | 이화다이아몬드공업 주식회사 | Ｃｍｐ 패드 컨디셔너 |
| SG11201500802TA (en) * | 2012-08-02 | 2015-04-29 | 3M Innovative Properties Co | Abrasive articles with precisely shaped features and method of making thereof |
| USD737873S1 (en) | 2012-09-26 | 2015-09-01 | Ebara Corporation | Dresser disk |
| USD743456S1 (en) | 2012-09-26 | 2015-11-17 | Ebara Corporation | Dresser disk |
| TWD160526S (zh) | 2012-09-26 | 2014-05-11 | 荏原製作所股份有限公司 | 修整器碟片用修整塊 |
| KR101392401B1 (ko) * | 2012-11-30 | 2014-05-07 | 이화다이아몬드공업 주식회사 | 컨디셔너 겸용 웨이퍼 리테이너링 및 상기 리테이너링 제조방법 |
| US20140295740A1 (en) * | 2013-03-26 | 2014-10-02 | HGST Netherlands B.V. | Ultra fine lapping substrate through use of hard coated material on lapping kinematics |
| USD743455S1 (en) | 2013-03-26 | 2015-11-17 | Ebara Corporation | Dresser disk |
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| KR102304574B1 (ko) * | 2014-03-21 | 2021-09-27 | 엔테그리스, 아이엔씨. | 세장형 절삭 에지를 갖는 화학 기계 평탄화 패드 컨디셔너 |
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-
2012
- 2012-03-06 CN CN201280022237.9A patent/CN103688343B/zh active Active
- 2012-03-06 WO PCT/US2012/027916 patent/WO2012122186A2/en not_active Ceased
- 2012-03-06 KR KR1020137025682A patent/KR101916492B1/ko active Active
- 2012-03-06 SG SG2013067152A patent/SG193340A1/en unknown
- 2012-03-06 US US14/004,152 patent/US9132526B2/en active Active
- 2012-03-06 JP JP2013557810A patent/JP6133218B2/ja active Active
- 2012-03-06 EP EP12754519.2A patent/EP2684211B1/en active Active
- 2012-03-07 TW TW101107639A patent/TWI592258B/zh active
-
2015
- 2015-08-20 US US14/831,280 patent/US9616547B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012122186A3 (en) | 2012-11-08 |
| US9616547B2 (en) | 2017-04-11 |
| EP2684211B1 (en) | 2017-01-18 |
| CN103688343A (zh) | 2014-03-26 |
| EP2684211A2 (en) | 2014-01-15 |
| KR101916492B1 (ko) | 2018-11-07 |
| EP2684211A4 (en) | 2014-08-20 |
| WO2012122186A2 (en) | 2012-09-13 |
| WO2012122186A4 (en) | 2013-01-10 |
| TWI592258B (zh) | 2017-07-21 |
| TW201249595A (en) | 2012-12-16 |
| US9132526B2 (en) | 2015-09-15 |
| JP2014510645A (ja) | 2014-05-01 |
| US20140113532A1 (en) | 2014-04-24 |
| CN103688343B (zh) | 2016-09-07 |
| JP6133218B2 (ja) | 2017-05-24 |
| US20160074993A1 (en) | 2016-03-17 |
| KR20140036160A (ko) | 2014-03-25 |
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