SG177625A1 - Grooved cmp polishing pad - Google Patents
Grooved cmp polishing pad Download PDFInfo
- Publication number
- SG177625A1 SG177625A1 SG2012002234A SG2012002234A SG177625A1 SG 177625 A1 SG177625 A1 SG 177625A1 SG 2012002234 A SG2012002234 A SG 2012002234A SG 2012002234 A SG2012002234 A SG 2012002234A SG 177625 A1 SG177625 A1 SG 177625A1
- Authority
- SG
- Singapore
- Prior art keywords
- mil
- polishing
- polishing pad
- pad
- groove
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 99
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 11
- 239000002002 slurry Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27106809P | 2009-07-16 | 2009-07-16 | |
PCT/US2010/042073 WO2011008918A2 (en) | 2009-07-16 | 2010-07-15 | Grooved cmp polishing pad |
Publications (1)
Publication Number | Publication Date |
---|---|
SG177625A1 true SG177625A1 (en) | 2012-02-28 |
Family
ID=43450188
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201404152UA SG10201404152UA (en) | 2009-07-16 | 2010-07-15 | Grooved cmp polishing pad |
SG2012002234A SG177625A1 (en) | 2009-07-16 | 2010-07-15 | Grooved cmp polishing pad |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201404152UA SG10201404152UA (en) | 2009-07-16 | 2010-07-15 | Grooved cmp polishing pad |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110014858A1 (zh) |
JP (1) | JP2012533888A (zh) |
KR (1) | KR101478414B1 (zh) |
CN (1) | CN102498549A (zh) |
SG (2) | SG10201404152UA (zh) |
TW (1) | TWI519384B (zh) |
WO (1) | WO2011008918A2 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009018434B4 (de) * | 2009-04-22 | 2023-11-30 | Ev Group Gmbh | Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten |
DE102011082777A1 (de) * | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
JP2014124718A (ja) * | 2012-12-26 | 2014-07-07 | Toyo Tire & Rubber Co Ltd | 積層研磨パッドの製造方法 |
TWI599447B (zh) * | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊 |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
SG11201703114QA (en) | 2014-10-17 | 2017-06-29 | Applied Materials Inc | Cmp pad construction with composite material properties using additive manufacturing processes |
KR102609439B1 (ko) | 2015-10-30 | 2023-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
USD816774S1 (en) * | 2016-03-25 | 2018-05-01 | Craig Franklin Edevold | Spiral pattern for cribbage board |
EP3571009A4 (en) * | 2017-01-20 | 2021-01-20 | Applied Materials, Inc. | THIN PLASTIC POLISHING ARTICLE FOR CMP APPLICATIONS |
USD855110S1 (en) * | 2017-01-31 | 2019-07-30 | Gary Peterson | Game board |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7299970B2 (ja) | 2018-09-04 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | 改良型研磨パッドのための配合物 |
CN112720282B (zh) * | 2020-12-31 | 2022-04-08 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN113829176B (zh) * | 2021-08-31 | 2023-04-14 | 北京航天控制仪器研究所 | 一种用于铍材镜体研磨抛光的研磨平板及研磨抛光方法 |
CN114274043B (zh) * | 2021-12-29 | 2023-02-24 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6736709B1 (en) * | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
JP4615813B2 (ja) * | 2000-05-27 | 2011-01-19 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 化学機械平坦化用の研磨パッド |
CN100356515C (zh) * | 2002-04-03 | 2007-12-19 | 东邦工程株式会社 | 抛光垫及使用该垫制造半导体衬底的方法 |
JP3849582B2 (ja) * | 2002-06-03 | 2006-11-22 | Jsr株式会社 | 研磨パッド及び複層型研磨パッド |
JP3849594B2 (ja) * | 2002-06-28 | 2006-11-22 | Jsr株式会社 | 研磨パッド |
EP1369204B1 (en) * | 2002-06-03 | 2006-10-11 | JSR Corporation | Polishing pad and process for manufacturing a polishing pad |
JP2004071985A (ja) * | 2002-08-08 | 2004-03-04 | Jsr Corp | 半導体ウェハ用研磨パッドの加工方法及び半導体ウェハ用研磨パッド |
JP2004167605A (ja) * | 2002-11-15 | 2004-06-17 | Rodel Nitta Co | 研磨パッドおよび研磨装置 |
JP3872081B2 (ja) * | 2004-12-29 | 2007-01-24 | 東邦エンジニアリング株式会社 | 研磨用パッド |
CN101024260A (zh) * | 2006-02-24 | 2007-08-29 | 三芳化学工业股份有限公司 | 具有表面纹路的抛光垫和其制造方法与制造装置 |
US8192257B2 (en) * | 2006-04-06 | 2012-06-05 | Micron Technology, Inc. | Method of manufacture of constant groove depth pads |
-
2010
- 2010-07-15 CN CN2010800414168A patent/CN102498549A/zh active Pending
- 2010-07-15 SG SG10201404152UA patent/SG10201404152UA/en unknown
- 2010-07-15 JP JP2012520766A patent/JP2012533888A/ja active Pending
- 2010-07-15 KR KR1020127003925A patent/KR101478414B1/ko not_active IP Right Cessation
- 2010-07-15 SG SG2012002234A patent/SG177625A1/en unknown
- 2010-07-15 WO PCT/US2010/042073 patent/WO2011008918A2/en active Application Filing
- 2010-07-16 US US12/837,705 patent/US20110014858A1/en not_active Abandoned
- 2010-07-16 TW TW099123549A patent/TWI519384B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20120042985A (ko) | 2012-05-03 |
JP2012533888A (ja) | 2012-12-27 |
TWI519384B (zh) | 2016-02-01 |
TW201121711A (en) | 2011-07-01 |
CN102498549A (zh) | 2012-06-13 |
WO2011008918A3 (en) | 2011-04-28 |
US20110014858A1 (en) | 2011-01-20 |
KR101478414B1 (ko) | 2014-12-31 |
WO2011008918A2 (en) | 2011-01-20 |
SG10201404152UA (en) | 2014-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG177625A1 (en) | Grooved cmp polishing pad | |
US8133096B2 (en) | Multi-phase polishing pad | |
JP4634381B2 (ja) | 三次元固定砥粒物品のインサイチュ活性化 | |
JP5508947B2 (ja) | 半導体ウェハの製造方法及び加工方法 | |
JP2017208530A (ja) | Cmp研磨パッドのための研磨くず除去溝 | |
US6602436B2 (en) | Chemical mechanical planarization of metal substrates | |
JPWO2002005337A1 (ja) | 鏡面面取りウェーハ、鏡面面取り用研磨クロス、及び鏡面面取り研磨装置及び方法 | |
JP7260698B2 (ja) | ケミカルメカニカル研磨パッド | |
US20030114084A1 (en) | Method and apparatus for polishing substrates | |
WO2006009634A1 (en) | Continuous contour polishing of a multi-material surface | |
US11355346B2 (en) | Methods for processing semiconductor wafers having a polycrystalline finish | |
JP4698144B2 (ja) | 半導体装置の製造方法 | |
EP3352944A1 (en) | Polyurethane cmp pads having a high modulus ratio | |
JP2008238389A (ja) | Cmpパッドコンディショナ | |
WO2006026343A1 (en) | Polishing pad and methods of improving pad removal rates and planarization | |
US6300248B1 (en) | On-chip pad conditioning for chemical mechanical polishing | |
JP2021082696A (ja) | ウェーハの研磨方法及びシリコンウェーハ | |
KR101162759B1 (ko) | Cvd 패드 컨디셔너 전처리방법 및 상기 방법으로 전 처리된 cvd 패드 컨디셔너 | |
JP5333190B2 (ja) | 半導体装置の製造方法 | |
Tseng et al. | Microreplicated pad conditioner for copper and copper barrier CMP applications |