SG169901A1 - Source and mask optimization - Google Patents
Source and mask optimizationInfo
- Publication number
- SG169901A1 SG169901A1 SG200804656-7A SG2008046567A SG169901A1 SG 169901 A1 SG169901 A1 SG 169901A1 SG 2008046567 A SG2008046567 A SG 2008046567A SG 169901 A1 SG169901 A1 SG 169901A1
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- minimum
- intensity
- areas
- optimal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45836503P | 2003-03-31 | 2003-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG169901A1 true SG169901A1 (en) | 2011-04-29 |
Family
ID=32851067
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200401734-9A SG146424A1 (en) | 2003-03-31 | 2004-03-31 | Source and mask optimization |
SG2011031390A SG179329A1 (en) | 2003-03-31 | 2004-03-31 | Source and mask optimization |
SG200804656-7A SG169901A1 (en) | 2003-03-31 | 2004-03-31 | Source and mask optimization |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200401734-9A SG146424A1 (en) | 2003-03-31 | 2004-03-31 | Source and mask optimization |
SG2011031390A SG179329A1 (en) | 2003-03-31 | 2004-03-31 | Source and mask optimization |
Country Status (7)
Country | Link |
---|---|
US (4) | US20040265707A1 (ja) |
EP (1) | EP1465016A3 (ja) |
JP (2) | JP4731830B2 (ja) |
KR (1) | KR100760037B1 (ja) |
CN (3) | CN102645851B (ja) |
SG (3) | SG146424A1 (ja) |
TW (1) | TWI334511B (ja) |
Families Citing this family (80)
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US7480889B2 (en) * | 2003-04-06 | 2009-01-20 | Luminescent Technologies, Inc. | Optimized photomasks for photolithography |
TW594437B (en) * | 2003-10-16 | 2004-06-21 | Univ Nat Taiwan Science Tech | Dynamic mask module |
SG111289A1 (en) * | 2003-11-05 | 2005-05-30 | Asml Masktools Bv | A method for performing transmission tuning of a mask pattern to improve process latitude |
JP4528580B2 (ja) * | 2004-08-24 | 2010-08-18 | 株式会社東芝 | 照明光源の設計方法、マスクパターン設計方法、フォトマスクの製造方法、半導体装置の製造方法、及びプログラム |
EP1856654A2 (en) * | 2005-01-28 | 2007-11-21 | ASML Holding N.V. | Method and system for a maskless lithography rasterization tecnique based on global optimization |
EP1696273B1 (en) | 2005-02-23 | 2008-08-06 | ASML MaskTools B.V. | Method and apparatus for optimising illumination for full-chip layer |
US7317506B2 (en) * | 2005-03-29 | 2008-01-08 | Asml Netherlands B.V. | Variable illumination source |
US7548302B2 (en) * | 2005-03-29 | 2009-06-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7509620B2 (en) * | 2005-03-31 | 2009-03-24 | Intel Corporation | Dual phase shift photolithography masks for logic patterning |
JP4425239B2 (ja) * | 2005-05-16 | 2010-03-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
US20070046917A1 (en) * | 2005-08-31 | 2007-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method that compensates for reticle induced CDU |
CN101297390B (zh) | 2005-09-13 | 2011-04-20 | 朗明科技公司 | 用于光刻法的系统、掩模和方法 |
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WO2007044557A2 (en) | 2005-10-06 | 2007-04-19 | Luminescent Technologies, Inc. | System, masks, and methods for photomasks optimized with approximate and accurate merit functions |
US7493589B2 (en) * | 2005-12-29 | 2009-02-17 | Asml Masktools B.V. | Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process |
US7921383B1 (en) * | 2006-01-11 | 2011-04-05 | Olambda, Inc | Photolithographic process simulation including efficient result computation for multiple process variation values |
US7804646B2 (en) * | 2006-01-31 | 2010-09-28 | Asml Masktools B.V. | Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using standard DOEs with optimized exposure settings |
US7807323B2 (en) * | 2006-04-11 | 2010-10-05 | Kabushiki Kaisha Toshiba | Exposure condition setting method, semiconductor device manufacturing method, and exposure condition setting program |
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JP5235322B2 (ja) * | 2006-07-12 | 2013-07-10 | キヤノン株式会社 | 原版データ作成方法及び原版データ作成プログラム |
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US8576377B2 (en) * | 2006-12-28 | 2013-11-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US7974728B2 (en) | 2007-05-04 | 2011-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | System for extraction of key process parameters from fault detection classification to enable wafer prediction |
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DE102008035320A1 (de) | 2008-07-25 | 2010-01-28 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage, Mikrolithographie-Projektionsbelichtungsanlage mit einem solchen Beleuchtungssystem sowie Fourieroptiksystem |
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CN102323722B (zh) * | 2011-09-09 | 2013-08-21 | 北京理工大学 | 基于Abbe矢量成像模型获取掩膜空间像的方法 |
CN102323721B (zh) * | 2011-09-09 | 2013-08-21 | 北京理工大学 | 基于Abbe矢量成像模型获取非理想光刻系统空间像的方法 |
KR102141138B1 (ko) * | 2012-03-14 | 2020-08-05 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 |
JP5869942B2 (ja) * | 2012-04-03 | 2016-02-24 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | マスクのデザイン方法、プログラムおよびマスクデザインシステム |
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CN102707582B (zh) * | 2012-06-18 | 2013-11-27 | 北京理工大学 | 一种基于Abbe矢量成像模型的光源-掩模同步优化方法 |
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US8954898B2 (en) | 2013-03-15 | 2015-02-10 | International Business Machines Corporation | Source-mask optimization for a lithography process |
CN103631096B (zh) * | 2013-12-06 | 2015-05-20 | 北京理工大学 | 基于Abbe矢量成像模型的光源-掩模-偏振态联合优化方法 |
US10216096B2 (en) | 2015-08-14 | 2019-02-26 | Kla-Tencor Corporation | Process-sensitive metrology systems and methods |
WO2017102321A1 (en) | 2015-12-14 | 2017-06-22 | Cymer, Llc | Optimization of source and bandwidth for new and existing patterning devices |
DE102017106984B4 (de) | 2017-03-31 | 2022-02-10 | Carl Zeiss Microscopy Gmbh | Lichtmikroskop und Verfahren zum Betreiben eines Lichtmikroskops mit optimierter Beleuchtungsgeometrie |
US10599046B2 (en) * | 2017-06-02 | 2020-03-24 | Samsung Electronics Co., Ltd. | Method, a non-transitory computer-readable medium, and/or an apparatus for determining whether to order a mask structure |
KR102428750B1 (ko) | 2017-10-19 | 2022-08-02 | 사이머 엘엘씨 | 단일의 리소그래피 노광 패스로 복수의 에어리얼 이미지를 형성하는 방법 |
CN111929983A (zh) * | 2020-06-28 | 2020-11-13 | 中国科学院上海光学精密机械研究所 | 基于多边形区域表征的全芯片光源掩模优化关键图形筛选方法 |
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2004
- 2004-03-31 CN CN201210094136.4A patent/CN102645851B/zh not_active Expired - Lifetime
- 2004-03-31 CN CN2004100387699A patent/CN1591189B/zh not_active Expired - Lifetime
- 2004-03-31 TW TW093108940A patent/TWI334511B/zh active
- 2004-03-31 SG SG200401734-9A patent/SG146424A1/en unknown
- 2004-03-31 JP JP2004132168A patent/JP4731830B2/ja not_active Expired - Lifetime
- 2004-03-31 SG SG2011031390A patent/SG179329A1/en unknown
- 2004-03-31 CN CN2010101583748A patent/CN101840163B/zh not_active Expired - Lifetime
- 2004-03-31 US US10/813,626 patent/US20040265707A1/en not_active Abandoned
- 2004-03-31 KR KR1020040022288A patent/KR100760037B1/ko active IP Right Grant
- 2004-03-31 EP EP04251926A patent/EP1465016A3/en not_active Withdrawn
- 2004-03-31 SG SG200804656-7A patent/SG169901A1/en unknown
-
2008
- 2008-08-05 US US12/186,410 patent/US7864301B2/en not_active Expired - Lifetime
-
2010
- 2010-03-24 JP JP2010068656A patent/JP5371849B2/ja not_active Expired - Lifetime
- 2010-12-07 US US12/962,522 patent/US8730452B2/en active Active
-
2014
- 2014-05-19 US US14/281,539 patent/US10657641B2/en active Active
Patent Citations (4)
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US6067375A (en) * | 1995-03-13 | 2000-05-23 | Sony Corporation | Correction method and correction apparatus of mask pattern |
US5698347A (en) * | 1995-03-24 | 1997-12-16 | Hyundai Electronics Industries Co., Ltd. | Reticle for off-axis illumination |
US5680588A (en) * | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
US20020140920A1 (en) * | 2001-01-29 | 2002-10-03 | International Business Machines Corporation, | System and method for printing semiconductor patterns using an optimized illumination and reticle |
Also Published As
Publication number | Publication date |
---|---|
SG179329A1 (en) | 2012-04-27 |
JP4731830B2 (ja) | 2011-07-27 |
CN101840163B (zh) | 2012-06-06 |
TW200502709A (en) | 2005-01-16 |
CN1591189B (zh) | 2010-05-26 |
CN102645851B (zh) | 2015-11-25 |
CN1591189A (zh) | 2005-03-09 |
JP2004312027A (ja) | 2004-11-04 |
US20140247975A1 (en) | 2014-09-04 |
JP2010176144A (ja) | 2010-08-12 |
US7864301B2 (en) | 2011-01-04 |
US20040265707A1 (en) | 2004-12-30 |
CN102645851A (zh) | 2012-08-22 |
US10657641B2 (en) | 2020-05-19 |
KR20040088378A (ko) | 2004-10-16 |
EP1465016A2 (en) | 2004-10-06 |
JP5371849B2 (ja) | 2013-12-18 |
SG146424A1 (en) | 2008-10-30 |
US20090053621A1 (en) | 2009-02-26 |
KR100760037B1 (ko) | 2007-09-20 |
CN101840163A (zh) | 2010-09-22 |
EP1465016A3 (en) | 2008-10-15 |
TWI334511B (en) | 2010-12-11 |
US20110075124A1 (en) | 2011-03-31 |
US8730452B2 (en) | 2014-05-20 |
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