SG161153A1 - Substrate processing apparatus and cleaning method of the same - Google Patents
Substrate processing apparatus and cleaning method of the sameInfo
- Publication number
- SG161153A1 SG161153A1 SG200906693-7A SG2009066937A SG161153A1 SG 161153 A1 SG161153 A1 SG 161153A1 SG 2009066937 A SG2009066937 A SG 2009066937A SG 161153 A1 SG161153 A1 SG 161153A1
- Authority
- SG
- Singapore
- Prior art keywords
- ion beam
- processing apparatus
- beam generator
- substrate processing
- same
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0822—Multiple sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3156—Curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/316—Changing physical properties
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008266939 | 2008-10-16 | ||
JP2009230993A JP5390330B2 (ja) | 2008-10-16 | 2009-10-02 | 基板処理装置およびそのクリーニング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG161153A1 true SG161153A1 (en) | 2010-05-27 |
Family
ID=42107914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200906693-7A SG161153A1 (en) | 2008-10-16 | 2009-10-07 | Substrate processing apparatus and cleaning method of the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US8053747B2 (ja) |
JP (1) | JP5390330B2 (ja) |
SG (1) | SG161153A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8776542B2 (en) * | 2009-12-25 | 2014-07-15 | Canon Anelva Corporation | Cooling system |
US8309937B2 (en) * | 2010-10-05 | 2012-11-13 | Veeco Instruments, Inc. | Grid providing beamlet steering |
US9330885B2 (en) * | 2011-06-30 | 2016-05-03 | Seagate Technology Llc | Method of stack patterning using a ion etching |
JP5914007B2 (ja) * | 2012-01-20 | 2016-05-11 | 昭和電工株式会社 | 磁気記録媒体の製造方法 |
WO2014136158A1 (ja) * | 2013-03-08 | 2014-09-12 | キヤノンアネルバ株式会社 | イオンビーム処理方法、およびイオンビーム処理装置 |
US9336998B2 (en) * | 2014-05-09 | 2016-05-10 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for dynamic control of ion beam energy and angle |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4541890A (en) * | 1982-06-01 | 1985-09-17 | International Business Machines Corporation | Hall ion generator for working surfaces with a low energy high intensity ion beam |
JPS62217548A (ja) * | 1986-03-18 | 1987-09-25 | Nec Corp | イオン注入装置 |
JPH0711072B2 (ja) * | 1986-04-04 | 1995-02-08 | 株式会社日立製作所 | イオン源装置 |
GB8623453D0 (en) * | 1986-09-30 | 1986-11-05 | Tecvac Ltd | Ion implantation |
JPH0724205B2 (ja) * | 1986-10-08 | 1995-03-15 | 株式会社日立製作所 | イオンビ−ムの加工装置 |
JPH0256931A (ja) * | 1988-08-22 | 1990-02-26 | Fujitsu Ltd | 半導体装置のドライ前処理装置 |
JPH0631745A (ja) * | 1992-07-15 | 1994-02-08 | Matsushita Electric Works Ltd | 熱硬化性材料用の成形金型及び金型クリーニング方法 |
JPH0822980A (ja) * | 1994-07-06 | 1996-01-23 | Nissin Electric Co Ltd | プラズマ処理装置 |
US5633506A (en) * | 1995-07-17 | 1997-05-27 | Eaton Corporation | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
JP3533884B2 (ja) * | 1997-06-03 | 2004-05-31 | 日立電子エンジニアリング株式会社 | 基板洗浄装置 |
US6515426B1 (en) * | 1998-12-15 | 2003-02-04 | Hitachi, Ltd. | Ion beam processing apparatus and method of operating ion source therefor |
US6153067A (en) * | 1998-12-30 | 2000-11-28 | Advanced Ion Technology, Inc. | Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source |
US6756600B2 (en) * | 1999-02-19 | 2004-06-29 | Advanced Micro Devices, Inc. | Ion implantation with improved ion source life expectancy |
US6236163B1 (en) * | 1999-10-18 | 2001-05-22 | Yuri Maishev | Multiple-beam ion-beam assembly |
US6496891B1 (en) * | 1999-12-30 | 2002-12-17 | Intel Corporation | Device and method to emulate interrupts to provide PS/2 mouse and keyboard functionality for a USB mouse keyboard |
US6559462B1 (en) * | 2000-10-31 | 2003-05-06 | International Business Machines Corporation | Method to reduce downtime while implanting GeF4 |
US6670623B2 (en) * | 2001-03-07 | 2003-12-30 | Advanced Technology Materials, Inc. | Thermal regulation of an ion implantation system |
US6815690B2 (en) * | 2002-07-23 | 2004-11-09 | Guardian Industries Corp. | Ion beam source with coated electrode(s) |
JP2005056535A (ja) * | 2003-08-07 | 2005-03-03 | Tdk Corp | 磁気記録媒体の製造方法及び製造装置 |
US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
US7820981B2 (en) * | 2003-12-12 | 2010-10-26 | Semequip, Inc. | Method and apparatus for extending equipment uptime in ion implantation |
GB2412488B (en) * | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
JP4300168B2 (ja) * | 2004-09-10 | 2009-07-22 | 株式会社日立ハイテクノロジーズ | 集束イオンビーム装置、及びそれに用いる絞り |
US6992311B1 (en) * | 2005-01-18 | 2006-01-31 | Axcelis Technologies, Inc. | In-situ cleaning of beam defining apertures in an ion implanter |
JP4862110B2 (ja) * | 2005-02-28 | 2012-01-25 | 国立大学法人京都工芸繊維大学 | イオン源 |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
DE102005054605B4 (de) * | 2005-11-16 | 2010-09-30 | Bruker Daltonik Gmbh | Automatische Reinigung von Ionenquellen |
JPWO2009020150A1 (ja) * | 2007-08-08 | 2010-11-04 | エスアイアイ・ナノテクノロジー株式会社 | 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法 |
CN101595240B (zh) * | 2007-10-31 | 2012-05-23 | 佳能安内华股份有限公司 | 磁控管单元、磁控管溅射设备和制造电子器件的方法 |
DE102008008634B4 (de) * | 2008-02-12 | 2011-07-07 | Bruker Daltonik GmbH, 28359 | Automatische Reinigung von MALDI-Ionenquellen |
EP2283509A1 (en) * | 2008-05-30 | 2011-02-16 | Axcelis Technologies, Inc. | Control of particles on semiconductor wafers when implanting boron hydrides |
US7888662B2 (en) * | 2008-06-20 | 2011-02-15 | Varian Semiconductor Equipment Associates, Inc. | Ion source cleaning method and apparatus |
-
2009
- 2009-10-02 JP JP2009230993A patent/JP5390330B2/ja active Active
- 2009-10-07 SG SG200906693-7A patent/SG161153A1/en unknown
- 2009-10-15 US US12/579,636 patent/US8053747B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010118648A (ja) | 2010-05-27 |
US20100096568A1 (en) | 2010-04-22 |
US8053747B2 (en) | 2011-11-08 |
JP5390330B2 (ja) | 2014-01-15 |
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