SG161153A1 - Substrate processing apparatus and cleaning method of the same - Google Patents

Substrate processing apparatus and cleaning method of the same

Info

Publication number
SG161153A1
SG161153A1 SG200906693-7A SG2009066937A SG161153A1 SG 161153 A1 SG161153 A1 SG 161153A1 SG 2009066937 A SG2009066937 A SG 2009066937A SG 161153 A1 SG161153 A1 SG 161153A1
Authority
SG
Singapore
Prior art keywords
ion beam
processing apparatus
beam generator
substrate processing
same
Prior art date
Application number
SG200906693-7A
Other languages
English (en)
Inventor
Einstein Noel Abarra
Masahiro Shibamoto
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of SG161153A1 publication Critical patent/SG161153A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3156—Curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/316—Changing physical properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG200906693-7A 2008-10-16 2009-10-07 Substrate processing apparatus and cleaning method of the same SG161153A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008266939 2008-10-16
JP2009230993A JP5390330B2 (ja) 2008-10-16 2009-10-02 基板処理装置およびそのクリーニング方法

Publications (1)

Publication Number Publication Date
SG161153A1 true SG161153A1 (en) 2010-05-27

Family

ID=42107914

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200906693-7A SG161153A1 (en) 2008-10-16 2009-10-07 Substrate processing apparatus and cleaning method of the same

Country Status (3)

Country Link
US (1) US8053747B2 (ja)
JP (1) JP5390330B2 (ja)
SG (1) SG161153A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8776542B2 (en) * 2009-12-25 2014-07-15 Canon Anelva Corporation Cooling system
US8309937B2 (en) * 2010-10-05 2012-11-13 Veeco Instruments, Inc. Grid providing beamlet steering
US9330885B2 (en) * 2011-06-30 2016-05-03 Seagate Technology Llc Method of stack patterning using a ion etching
JP5914007B2 (ja) * 2012-01-20 2016-05-11 昭和電工株式会社 磁気記録媒体の製造方法
WO2014136158A1 (ja) * 2013-03-08 2014-09-12 キヤノンアネルバ株式会社 イオンビーム処理方法、およびイオンビーム処理装置
US9336998B2 (en) * 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle

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US4541890A (en) * 1982-06-01 1985-09-17 International Business Machines Corporation Hall ion generator for working surfaces with a low energy high intensity ion beam
JPS62217548A (ja) * 1986-03-18 1987-09-25 Nec Corp イオン注入装置
JPH0711072B2 (ja) * 1986-04-04 1995-02-08 株式会社日立製作所 イオン源装置
GB8623453D0 (en) * 1986-09-30 1986-11-05 Tecvac Ltd Ion implantation
JPH0724205B2 (ja) * 1986-10-08 1995-03-15 株式会社日立製作所 イオンビ−ムの加工装置
JPH0256931A (ja) * 1988-08-22 1990-02-26 Fujitsu Ltd 半導体装置のドライ前処理装置
JPH0631745A (ja) * 1992-07-15 1994-02-08 Matsushita Electric Works Ltd 熱硬化性材料用の成形金型及び金型クリーニング方法
JPH0822980A (ja) * 1994-07-06 1996-01-23 Nissin Electric Co Ltd プラズマ処理装置
US5633506A (en) * 1995-07-17 1997-05-27 Eaton Corporation Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
JP3533884B2 (ja) * 1997-06-03 2004-05-31 日立電子エンジニアリング株式会社 基板洗浄装置
US6515426B1 (en) * 1998-12-15 2003-02-04 Hitachi, Ltd. Ion beam processing apparatus and method of operating ion source therefor
US6153067A (en) * 1998-12-30 2000-11-28 Advanced Ion Technology, Inc. Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
US6756600B2 (en) * 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US6236163B1 (en) * 1999-10-18 2001-05-22 Yuri Maishev Multiple-beam ion-beam assembly
US6496891B1 (en) * 1999-12-30 2002-12-17 Intel Corporation Device and method to emulate interrupts to provide PS/2 mouse and keyboard functionality for a USB mouse keyboard
US6559462B1 (en) * 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
US6670623B2 (en) * 2001-03-07 2003-12-30 Advanced Technology Materials, Inc. Thermal regulation of an ion implantation system
US6815690B2 (en) * 2002-07-23 2004-11-09 Guardian Industries Corp. Ion beam source with coated electrode(s)
JP2005056535A (ja) * 2003-08-07 2005-03-03 Tdk Corp 磁気記録媒体の製造方法及び製造装置
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
US7820981B2 (en) * 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
GB2412488B (en) * 2004-03-26 2007-03-28 Applied Materials Inc Ion sources
JP4300168B2 (ja) * 2004-09-10 2009-07-22 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、及びそれに用いる絞り
US6992311B1 (en) * 2005-01-18 2006-01-31 Axcelis Technologies, Inc. In-situ cleaning of beam defining apertures in an ion implanter
JP4862110B2 (ja) * 2005-02-28 2012-01-25 国立大学法人京都工芸繊維大学 イオン源
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
DE102005054605B4 (de) * 2005-11-16 2010-09-30 Bruker Daltonik Gmbh Automatische Reinigung von Ionenquellen
JPWO2009020150A1 (ja) * 2007-08-08 2010-11-04 エスアイアイ・ナノテクノロジー株式会社 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法
CN101595240B (zh) * 2007-10-31 2012-05-23 佳能安内华股份有限公司 磁控管单元、磁控管溅射设备和制造电子器件的方法
DE102008008634B4 (de) * 2008-02-12 2011-07-07 Bruker Daltonik GmbH, 28359 Automatische Reinigung von MALDI-Ionenquellen
EP2283509A1 (en) * 2008-05-30 2011-02-16 Axcelis Technologies, Inc. Control of particles on semiconductor wafers when implanting boron hydrides
US7888662B2 (en) * 2008-06-20 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Ion source cleaning method and apparatus

Also Published As

Publication number Publication date
JP2010118648A (ja) 2010-05-27
US20100096568A1 (en) 2010-04-22
US8053747B2 (en) 2011-11-08
JP5390330B2 (ja) 2014-01-15

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