SG159484A1 - Method of manufacturing soi substrate - Google Patents

Method of manufacturing soi substrate

Info

Publication number
SG159484A1
SG159484A1 SG200905695-3A SG2009056953A SG159484A1 SG 159484 A1 SG159484 A1 SG 159484A1 SG 2009056953 A SG2009056953 A SG 2009056953A SG 159484 A1 SG159484 A1 SG 159484A1
Authority
SG
Singapore
Prior art keywords
substrate
semiconductor substrate
single crystal
manufacturing
crystal semiconductor
Prior art date
Application number
SG200905695-3A
Other languages
English (en)
Inventor
Yuta Endo
Ryota Imahayashi
Ryosuke Murata
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG159484A1 publication Critical patent/SG159484A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
SG200905695-3A 2008-09-05 2009-08-26 Method of manufacturing soi substrate SG159484A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008227725 2008-09-05

Publications (1)

Publication Number Publication Date
SG159484A1 true SG159484A1 (en) 2010-03-30

Family

ID=41799628

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200905695-3A SG159484A1 (en) 2008-09-05 2009-08-26 Method of manufacturing soi substrate

Country Status (3)

Country Link
US (1) US8187953B2 (ja)
JP (1) JP5572347B2 (ja)
SG (1) SG159484A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364345B2 (ja) * 2008-11-12 2013-12-11 株式会社半導体エネルギー研究所 Soi基板の作製方法
US8318588B2 (en) * 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
WO2011043178A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate
US8367519B2 (en) * 2009-12-30 2013-02-05 Memc Electronic Materials, Inc. Method for the preparation of a multi-layered crystalline structure
KR20120124352A (ko) * 2010-02-05 2012-11-13 스미토모덴키고교가부시키가이샤 탄화규소 기판의 제조 방법
US9287353B2 (en) 2010-11-30 2016-03-15 Kyocera Corporation Composite substrate and method of manufacturing the same
US20130299954A1 (en) * 2010-11-30 2013-11-14 Kyocera Corporation Composite substrate and method of manufacturing the same
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9123529B2 (en) 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
CN106409650B (zh) * 2015-08-03 2019-01-29 沈阳硅基科技有限公司 一种硅片直接键合方法
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
WO2018011731A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Method of a donor substrate undergoing reclamation
CN109478493A (zh) * 2016-07-12 2019-03-15 Qmat股份有限公司 供体衬底进行回收的方法
US11289330B2 (en) * 2019-09-30 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator (SOI) substrate and method for forming

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140786A (ja) * 1997-07-18 1999-02-12 Denso Corp 半導体基板及びその製造方法
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ
JP2000223682A (ja) * 1999-02-02 2000-08-11 Canon Inc 基体の処理方法及び半導体基板の製造方法
US6468923B1 (en) * 1999-03-26 2002-10-22 Canon Kabushiki Kaisha Method of producing semiconductor member
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
TWI233154B (en) * 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
JP5284576B2 (ja) * 2006-11-10 2013-09-11 信越化学工業株式会社 半導体基板の製造方法

Also Published As

Publication number Publication date
JP2010087492A (ja) 2010-04-15
US20100062546A1 (en) 2010-03-11
JP5572347B2 (ja) 2014-08-13
US8187953B2 (en) 2012-05-29

Similar Documents

Publication Publication Date Title
SG159484A1 (en) Method of manufacturing soi substrate
WO2012127245A3 (en) Structures and methods relating to graphene
TWI370488B (en) Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal
IN2014MN01027A (ja)
EP2394787A4 (en) Silicon carbide monocrystal substrate and manufacturing method therefor
EP2261401A4 (en) NITRIDE-SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREFOR
EP2210278A4 (en) SILICON SOLAR CELL AND MANUFACTURING METHOD THEREFOR
WO2011106203A3 (en) Spalling for a semiconductor substrate
EP2368276A4 (en) PV MODULE AND METHOD FOR MANUFACTURING A PV MODULE WITH MULTIPLE SEMICONDUCTOR LAYERING PLATES
GB201317886D0 (en) Method for forming bonded structures and bonded structures formed thereby
EP2575178A3 (en) Compound semiconductor device and manufacturing method therefor
EP2665089A4 (en) P-TYPE DIFFUSION LAYER FORMATION COMPOSITION, METHOD FOR PRODUCING SILICON SUBSTRATE HAVING P-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL
EP2360715A4 (en) METHOD FOR MANUFACTURING METALLIC LAMINATED SUBSTRATE FOR SEMICONDUCTOR ELEMENT FORMATION AND METALLIC LAMINATED SUBSTRATE FOR FORMING SEMICONDUCTOR ELEMENT
EP2548999A4 (en) GALLIUM NITRIDE CRYSTAL, NITRIDE CRYSTAL OF GROUP 13 ELEMENT, CRYSTALLINE SUBSTRATE, AND PROCESS FOR PRODUCTION THEREOF
WO2011122882A3 (ko) 반도체 템플릿 기판, 반도체 템플릿 기판을 이용하는 발광 소자 및 이의 제조 방법
GB0906330D0 (en) Method for manufacturing semiconductor epitaxial crystal substrate
WO2012013965A9 (en) Method of producing a light emitting device
SG166738A1 (en) Method for manufacturing soi substrate and soi substrate
WO2013181117A3 (en) Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same
EP2728624A4 (en) SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD, SOLAR CELL ELEMENT AND SOLAR CELL
WO2010027231A3 (ko) 리드 프레임 및 그 제조방법
WO2012037242A3 (en) Glass-coated flexible substrates for photovoltaic cells
WO2011129548A3 (en) Substrate assembly for crystal growth and fabricating method for light emitting device using the same
MX2012012594A (es) Componentes de yacimientos petroliferos y metodos para fabricarlos y usarlos.
WO2012105800A3 (ko) 나노전력발전소자 및 이의 제조방법