SG158822A1 - Full wafer width scanning using step and scan system - Google Patents
Full wafer width scanning using step and scan systemInfo
- Publication number
- SG158822A1 SG158822A1 SG200904869-5A SG2009048695A SG158822A1 SG 158822 A1 SG158822 A1 SG 158822A1 SG 2009048695 A SG2009048695 A SG 2009048695A SG 158822 A1 SG158822 A1 SG 158822A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- full wafer
- scan system
- width scanning
- pattern
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8634708P | 2008-08-05 | 2008-08-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG158822A1 true SG158822A1 (en) | 2010-02-26 |
Family
ID=41263992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200904869-5A SG158822A1 (en) | 2008-08-05 | 2009-07-17 | Full wafer width scanning using step and scan system |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100033698A1 (zh) |
EP (1) | EP2151717A1 (zh) |
JP (1) | JP4927912B2 (zh) |
KR (1) | KR101104864B1 (zh) |
CN (2) | CN101644901A (zh) |
SG (1) | SG158822A1 (zh) |
TW (1) | TW201013327A (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2221669A3 (en) | 2009-02-19 | 2011-02-09 | ASML Netherlands B.V. | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method |
US8211807B2 (en) * | 2010-10-19 | 2012-07-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double patterning technology using single-patterning-spacer-technique |
JP5969496B2 (ja) * | 2010-12-07 | 2016-08-17 | マイクロニック アーベーMycronic Ab | クリスクロス書き込み戦略 |
NL2008157A (en) | 2011-02-22 | 2012-08-24 | Asml Netherlands Bv | Lithographic apparatus and lithographic projection method. |
US8448120B2 (en) | 2011-05-09 | 2013-05-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | RC extraction for single patterning spacer technique |
JP5458068B2 (ja) | 2011-08-31 | 2014-04-02 | 株式会社東芝 | パターン転写装置および半導体装置の製造方法 |
US8906599B2 (en) * | 2012-05-17 | 2014-12-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Enhanced scanner throughput system and method |
US8957512B2 (en) * | 2012-06-19 | 2015-02-17 | Xilinx, Inc. | Oversized interposer |
US8869088B1 (en) | 2012-06-27 | 2014-10-21 | Xilinx, Inc. | Oversized interposer formed from a multi-pattern region mask |
US9026872B2 (en) | 2012-08-16 | 2015-05-05 | Xilinx, Inc. | Flexible sized die for use in multi-die integrated circuit |
EP2972589B1 (en) | 2013-03-12 | 2017-05-03 | Micronic Mydata AB | Mechanically produced alignment fiducial method and alignment system |
WO2014140047A2 (en) | 2013-03-12 | 2014-09-18 | Micronic Mydata AB | Method and device for writing photomasks with reduced mura errors |
CN104076613B (zh) * | 2013-03-27 | 2016-12-28 | 上海微电子装备有限公司 | 基于圆形掩模的步进扫描光刻机及其曝光方法 |
US9547034B2 (en) | 2013-07-03 | 2017-01-17 | Xilinx, Inc. | Monolithic integrated circuit die having modular die regions stitched together |
WO2015197260A1 (en) * | 2014-06-23 | 2015-12-30 | Asml Netherlands B.V. | Lithographic apparatus and method |
US9915869B1 (en) | 2014-07-01 | 2018-03-13 | Xilinx, Inc. | Single mask set used for interposer fabrication of multiple products |
CN109273380B (zh) * | 2017-07-17 | 2022-02-15 | 上海微电子装备(集团)股份有限公司 | 扫描对准装置及其扫描方法 |
DE102018207277A1 (de) | 2018-05-09 | 2019-11-14 | Carl Zeiss Smt Gmbh | Lithografiemaske, optisches System zur Übertragung von Original Strukturabschnitten der Lithografiemaske sowie Projektionsoptik zur Abbildung eines Objektfeldes, in dem mindestens ein Original-Strukturabschnitt einer Lithografiemaske anordenbar ist |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3079623B2 (ja) * | 1991-03-28 | 2000-08-21 | ソニー株式会社 | ステップ式露光方法及びステップ式露光装置 |
JPH10233360A (ja) * | 1997-02-20 | 1998-09-02 | Canon Inc | 露光装置、デバイス製造方法およびマスク |
JPH11233428A (ja) * | 1998-02-12 | 1999-08-27 | Nikon Corp | 露光装置および素子製造方法 |
JP2000021702A (ja) | 1998-06-30 | 2000-01-21 | Canon Inc | 露光装置ならびにデバイス製造方法 |
JP3385325B2 (ja) * | 1998-11-09 | 2003-03-10 | 日本電気株式会社 | 格子パターンの露光方法および露光装置 |
US7005235B2 (en) * | 2002-12-04 | 2006-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and systems to print contact hole patterns |
US20050074698A1 (en) | 2003-10-07 | 2005-04-07 | Intel Corporation | Composite optical lithography method for patterning lines of significantly different widths |
JP4625673B2 (ja) * | 2004-10-15 | 2011-02-02 | 株式会社東芝 | 露光方法及び露光装置 |
US8330936B2 (en) * | 2006-09-20 | 2012-12-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5210052B2 (ja) | 2008-06-02 | 2013-06-12 | ルネサスエレクトロニクス株式会社 | 半導体デバイスの製造方法 |
-
2009
- 2009-07-14 EP EP09165369A patent/EP2151717A1/en not_active Withdrawn
- 2009-07-17 SG SG200904869-5A patent/SG158822A1/en unknown
- 2009-07-23 TW TW098124921A patent/TW201013327A/zh unknown
- 2009-07-24 US US12/509,062 patent/US20100033698A1/en not_active Abandoned
- 2009-07-29 JP JP2009176303A patent/JP4927912B2/ja not_active Expired - Fee Related
- 2009-08-03 CN CN200910164424A patent/CN101644901A/zh active Pending
- 2009-08-03 CN CN2011100740534A patent/CN102129181A/zh active Pending
- 2009-08-03 KR KR1020090071372A patent/KR101104864B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2151717A1 (en) | 2010-02-10 |
KR20100017063A (ko) | 2010-02-16 |
US20100033698A1 (en) | 2010-02-11 |
CN102129181A (zh) | 2011-07-20 |
KR101104864B1 (ko) | 2012-01-16 |
JP4927912B2 (ja) | 2012-05-09 |
CN101644901A (zh) | 2010-02-10 |
JP2010041050A (ja) | 2010-02-18 |
TW201013327A (en) | 2010-04-01 |
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