SG151220A1 - Method and device for irreversibly programming and reading nonvolatile memory cells - Google Patents

Method and device for irreversibly programming and reading nonvolatile memory cells

Info

Publication number
SG151220A1
SG151220A1 SG200807017-9A SG2008070179A SG151220A1 SG 151220 A1 SG151220 A1 SG 151220A1 SG 2008070179 A SG2008070179 A SG 2008070179A SG 151220 A1 SG151220 A1 SG 151220A1
Authority
SG
Singapore
Prior art keywords
state
memory cells
memory cell
nonvolatile memory
switchable
Prior art date
Application number
SG200807017-9A
Other languages
English (en)
Inventor
Claudio Resta
Ferdinando Bedeschi
Fabio Pellizzer
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Publication of SG151220A1 publication Critical patent/SG151220A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
SG200807017-9A 2007-10-03 2008-09-22 Method and device for irreversibly programming and reading nonvolatile memory cells SG151220A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07425616A EP2045814A1 (en) 2007-10-03 2007-10-03 Method and device for irreversibly programming and reading nonvolatile memory cells

Publications (1)

Publication Number Publication Date
SG151220A1 true SG151220A1 (en) 2009-04-30

Family

ID=39267810

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200807017-9A SG151220A1 (en) 2007-10-03 2008-09-22 Method and device for irreversibly programming and reading nonvolatile memory cells

Country Status (6)

Country Link
EP (1) EP2045814A1 (zh)
JP (1) JP5613867B2 (zh)
KR (1) KR101564905B1 (zh)
CN (1) CN101430929B (zh)
DE (1) DE102008041947B4 (zh)
SG (1) SG151220A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2249352A1 (en) * 2009-05-05 2010-11-10 Nxp B.V. Phase change memory
CN101833557B (zh) * 2009-05-25 2012-05-23 深圳市朗科科技股份有限公司 基于应用程序的文件缓存方法和装置
US8569734B2 (en) 2010-08-04 2013-10-29 Micron Technology, Inc. Forming resistive random access memories together with fuse arrays
US8804399B2 (en) * 2012-03-23 2014-08-12 Micron Technology, Inc. Multi-function resistance change memory cells and apparatuses including the same
EP2953134B1 (en) 2013-02-01 2017-03-08 Panasonic Intellectual Property Management Co., Ltd. Non-volatile memory device
WO2014119327A1 (ja) 2013-02-01 2014-08-07 パナソニック株式会社 不揮発性記憶装置のデータ記録方法および不揮発性記憶装置のデータ書き込み回路
JP6048710B2 (ja) * 2013-02-28 2016-12-21 パナソニックＩｐマネジメント株式会社 暗号化記録装置、および暗号化記録方法
JP5689571B2 (ja) * 2013-02-28 2015-03-25 パナソニックＩｐマネジメント株式会社 暗号処理装置
US9823860B2 (en) 2014-03-14 2017-11-21 Nxp B.V. One-time programming in reprogrammable memory
JP2014139862A (ja) * 2014-05-01 2014-07-31 Hitachi Ltd 半導体装置、および記憶装置
US11031317B2 (en) 2019-10-09 2021-06-08 Toyota Motor Engineering & Manufacturing North America, Inc. Direct bonded metal substrates with encapsulated phase change materials and electronic assemblies incorporating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6778420B2 (en) * 2002-09-25 2004-08-17 Ovonyx, Inc. Method of operating programmable resistant element
EP2204813B1 (en) * 2004-05-03 2012-09-19 Unity Semiconductor Corporation Non-volatile programmable memory
US20060056227A1 (en) * 2004-09-10 2006-03-16 Parkinson Ward D One time programmable phase change memory
US7327602B2 (en) * 2004-10-07 2008-02-05 Ovonyx, Inc. Methods of accelerated life testing of programmable resistance memory elements
CN101292350B (zh) 2005-10-17 2012-08-22 瑞萨电子株式会社 半导体器件及其制造方法
JP5111839B2 (ja) * 2005-12-14 2013-01-09 三星電子株式会社 相変化ｏｔｐメモリセルを含む不揮発性メモリ素子、システム及びその方法
EP1811564B1 (en) * 2006-01-20 2010-03-10 STMicroelectronics S.r.l. Electrical fuse device based on a phase-change memory element and corresponding programming method

Also Published As

Publication number Publication date
CN101430929B (zh) 2013-12-25
EP2045814A1 (en) 2009-04-08
JP2009093786A (ja) 2009-04-30
KR20090034733A (ko) 2009-04-08
CN101430929A (zh) 2009-05-13
JP5613867B2 (ja) 2014-10-29
KR101564905B1 (ko) 2015-11-02
DE102008041947B4 (de) 2020-08-06
DE102008041947A1 (de) 2009-04-23

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