SG146428A1 - Method of characterising a process step and device manufacturing method - Google Patents

Method of characterising a process step and device manufacturing method

Info

Publication number
SG146428A1
SG146428A1 SG200402417-0A SG2004024170A SG146428A1 SG 146428 A1 SG146428 A1 SG 146428A1 SG 2004024170 A SG2004024170 A SG 2004024170A SG 146428 A1 SG146428 A1 SG 146428A1
Authority
SG
Singapore
Prior art keywords
device manufacturing
process step
characterising
wafer
substrate wafer
Prior art date
Application number
SG200402417-0A
Other languages
English (en)
Inventor
Maria Elisabeth Reuhman-Huisken
Mol Christianus Gerardus Maria De
Hoite Pieter Theodoor Tolsma
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG146428A1 publication Critical patent/SG146428A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200402417-0A 2003-05-13 2004-05-06 Method of characterising a process step and device manufacturing method SG146428A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03252966A EP1477851A1 (en) 2003-05-13 2003-05-13 Device manufacturing method and lithographic apparatus

Publications (1)

Publication Number Publication Date
SG146428A1 true SG146428A1 (en) 2008-10-30

Family

ID=33017007

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200402417-0A SG146428A1 (en) 2003-05-13 2004-05-06 Method of characterising a process step and device manufacturing method

Country Status (7)

Country Link
US (1) US7410735B2 (zh)
EP (1) EP1477851A1 (zh)
JP (2) JP2004343113A (zh)
KR (1) KR100609116B1 (zh)
CN (1) CN100495212C (zh)
SG (1) SG146428A1 (zh)
TW (1) TWI244717B (zh)

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US7417748B2 (en) * 2005-04-28 2008-08-26 Corning Incorporated Method and apparatus for measuring dimensional changes in transparent substrates
US7649614B2 (en) * 2005-06-10 2010-01-19 Asml Netherlands B.V. Method of characterization, method of characterizing a process operation, and device manufacturing method
US7408618B2 (en) * 2005-06-30 2008-08-05 Asml Netherlands B.V. Lithographic apparatus substrate alignment
US8139218B2 (en) 2005-07-06 2012-03-20 Asml Netherlands B.V. Substrate distortion measurement
JP4752491B2 (ja) * 2005-12-22 2011-08-17 株式会社ニコン デバイス製造方法、マスク、デバイス
JP4998853B2 (ja) * 2006-01-30 2012-08-15 株式会社ニコン 処理条件決定方法及び装置、処理装置、測定装置及び露光装置、基板処理システム、並びにプログラム及び情報記録媒体
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7683351B2 (en) * 2006-12-01 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080182344A1 (en) * 2007-01-30 2008-07-31 Steffen Mueller Method and system for determining deformations on a substrate
US8164736B2 (en) * 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
EP2184768B1 (en) * 2007-07-24 2015-09-09 Nikon Corporation Mobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus and device manufacturing method
CN101900946B (zh) * 2009-05-27 2012-05-23 中芯国际集成电路制造(上海)有限公司 零标记曝光的检测方法及系统
FR2955654B1 (fr) 2010-01-25 2012-03-30 Soitec Silicon Insulator Technologies Systeme et procede d'evaluation de deformations inhomogenes dans des plaques multicouches
DE102010041556A1 (de) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie und Verfahren zur mikrolithographischen Abbildung
US8703368B2 (en) 2012-07-16 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography process
JP6006420B2 (ja) * 2012-08-29 2016-10-12 エーエスエムエル ネザーランズ ビー．ブイ． 変形パターン認識手法、パターン転写方法、処理デバイスモニタリング方法、及びリソグラフィ装置
US9412673B2 (en) * 2013-08-23 2016-08-09 Kla-Tencor Corporation Multi-model metrology
JP6401501B2 (ja) * 2014-06-02 2018-10-10 キヤノン株式会社 インプリント装置、および物品の製造方法
EP3157687A4 (en) 2014-06-17 2018-03-14 Kateeva, Inc. Printing system assemblies and methods
NL2017860B1 (en) 2015-12-07 2017-07-27 Ultratech Inc Systems and methods of characterizing process-induced wafer shape for process control using cgs interferometry
JP6630839B2 (ja) 2016-02-18 2020-01-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、デバイス製造方法ならびに関連データ処理装置およびコンピュータプログラム製品
US9961783B2 (en) 2016-07-08 2018-05-01 Kateeva, Inc. Guided transport path correction
EP3364247A1 (en) * 2017-02-17 2018-08-22 ASML Netherlands B.V. Methods & apparatus for monitoring a lithographic manufacturing process
CN109212916B (zh) * 2017-06-30 2022-02-15 上海微电子装备（集团）股份有限公司 一种曝光显影装置及方法
CN113506753A (zh) * 2021-06-17 2021-10-15 华虹半导体(无锡)有限公司 硅片平面形变的检测方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
US5252414A (en) * 1990-08-20 1993-10-12 Matsushita Electric Industrial Co., Ltd. Evaluation method of resist coating
EP0794465A2 (en) * 1996-03-06 1997-09-10 Nec Corporation Photolithographic method of producing a semiconductor device, using an alignment correction method
US5863680A (en) * 1995-10-13 1999-01-26 Nikon Corporation Exposure method utilizing alignment of superimposed layers
US20020102482A1 (en) * 2000-12-08 2002-08-01 Adlai Smith Reference wafer and process for manufacturing same

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JPH0757996A (ja) * 1993-08-17 1995-03-03 Seiko Epson Corp 露光装置、及び、半導体装置の製造方法
JP3721655B2 (ja) * 1995-11-17 2005-11-30 ソニー株式会社 半導体装置製造工程における合わせ誤差測定方法及び露光方法並びに重ね合わせ精度管理方法
JP4419233B2 (ja) 1999-12-15 2010-02-24 ソニー株式会社 露光方法
US20020042664A1 (en) 2000-05-31 2002-04-11 Nikon Corporation Evaluation method, position detection method, exposure method and device manufacturing method, and exposure apparatus
JP4905617B2 (ja) 2001-05-28 2012-03-28 株式会社ニコン 露光方法及びデバイス製造方法
JP2002134396A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体パターン自動調節装置
TW526573B (en) * 2000-12-27 2003-04-01 Koninkl Philips Electronics Nv Method of measuring overlay

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252414A (en) * 1990-08-20 1993-10-12 Matsushita Electric Industrial Co., Ltd. Evaluation method of resist coating
US5863680A (en) * 1995-10-13 1999-01-26 Nikon Corporation Exposure method utilizing alignment of superimposed layers
EP0794465A2 (en) * 1996-03-06 1997-09-10 Nec Corporation Photolithographic method of producing a semiconductor device, using an alignment correction method
US20020102482A1 (en) * 2000-12-08 2002-08-01 Adlai Smith Reference wafer and process for manufacturing same

Also Published As

Publication number Publication date
JP4926115B2 (ja) 2012-05-09
JP2008211233A (ja) 2008-09-11
CN100495212C (zh) 2009-06-03
TWI244717B (en) 2005-12-01
EP1477851A1 (en) 2004-11-17
KR100609116B1 (ko) 2006-08-08
CN1550910A (zh) 2004-12-01
US7410735B2 (en) 2008-08-12
JP2004343113A (ja) 2004-12-02
KR20040098564A (ko) 2004-11-20
US20050031975A1 (en) 2005-02-10
TW200507140A (en) 2005-02-16

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