SG145669A1 - Method and apparatus for controlling gas flow to a processing chamber - Google Patents

Method and apparatus for controlling gas flow to a processing chamber

Info

Publication number
SG145669A1
SG145669A1 SG200801438-3A SG2008014383A SG145669A1 SG 145669 A1 SG145669 A1 SG 145669A1 SG 2008014383 A SG2008014383 A SG 2008014383A SG 145669 A1 SG145669 A1 SG 145669A1
Authority
SG
Singapore
Prior art keywords
processing chamber
gases
gas flow
inlet
gas
Prior art date
Application number
SG200801438-3A
Other languages
English (en)
Inventor
Ezra Robert Gold
Richard Charles Fovell
James Patrick Cruse
Jared Ahmad Lee
Bruno Geoffrion
Arthur Buchberger Douglas Jr
Martin Jeffrey Salinas
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG145669A1 publication Critical patent/SG145669A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7758—Pilot or servo controlled
    • Y10T137/7761—Electrically actuated valve
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87249—Multiple inlet with multiple outlet

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG200801438-3A 2007-02-26 2008-02-20 Method and apparatus for controlling gas flow to a processing chamber SG145669A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/678,621 US8074677B2 (en) 2007-02-26 2007-02-26 Method and apparatus for controlling gas flow to a processing chamber

Publications (1)

Publication Number Publication Date
SG145669A1 true SG145669A1 (en) 2008-09-29

Family

ID=39312971

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200801438-3A SG145669A1 (en) 2007-02-26 2008-02-20 Method and apparatus for controlling gas flow to a processing chamber

Country Status (7)

Country Link
US (1) US8074677B2 (zh)
EP (1) EP1961836A1 (zh)
JP (1) JP5582684B2 (zh)
KR (1) KR100961793B1 (zh)
CN (1) CN101256936B (zh)
SG (1) SG145669A1 (zh)
TW (1) TWI365948B (zh)

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US8066895B2 (en) * 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US20090236447A1 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus for controlling gas injection in process chamber
JP5216632B2 (ja) * 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
US8328980B2 (en) * 2009-09-04 2012-12-11 Lam Research Corporation Apparatus and methods for enhanced fluid delivery on bevel etch applications
US8707754B2 (en) * 2010-04-30 2014-04-29 Applied Materials, Inc. Methods and apparatus for calibrating flow controllers in substrate processing systems
JP3184355U (ja) * 2010-07-05 2013-06-27 ソルヴェイ（ソシエテ アノニム） フッ素供給用のパージボックス及びパージシステム
CN101989068B (zh) * 2010-11-05 2012-07-18 北京七星华创电子股份有限公司 基于质量流量控制器的模拟工艺系统和方法
US8931512B2 (en) * 2011-03-07 2015-01-13 Applied Materials, Inc. Gas delivery system and method of use thereof
TWI489054B (zh) * 2011-06-21 2015-06-21 Au Optronics Corp 閥箱模組
JP5433660B2 (ja) * 2011-10-12 2014-03-05 Ｃｋｄ株式会社 ガス流量監視システム
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
CN102537661A (zh) * 2012-02-27 2012-07-04 无锡超科食品有限公司 液态物料进料系统
US9004107B2 (en) * 2012-08-21 2015-04-14 Applied Materials, Inc. Methods and apparatus for enhanced gas flow rate control
CN104167345B (zh) * 2013-05-17 2016-08-24 中微半导体设备(上海)有限公司 等离子处理装置及其气体输送装置、气体切换方法
US9335768B2 (en) * 2013-09-12 2016-05-10 Lam Research Corporation Cluster mass flow devices and multi-line mass flow devices incorporating the same
US9478390B2 (en) * 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
US11357966B2 (en) 2015-04-23 2022-06-14 B. Braun Medical Inc. Compounding device, system, kit, software, and method
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN108121370B (zh) * 2017-12-23 2020-06-02 东北大学 一种真空环境气体流量的测控方法及测控系统
US11327510B2 (en) * 2018-05-23 2022-05-10 Hitachi Metals, Ltd. Multi-chamber rate-of-change system for gas flow verification
WO2020033046A1 (en) * 2018-08-08 2020-02-13 Applied Materials, Inc. Method of gas composition determination, adjustment, and usage
CN113366602A (zh) * 2019-01-31 2021-09-07 朗姆研究公司 用于先进半导体应用的多通道液体输送系统
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device
WO2021098982A1 (en) * 2019-11-19 2021-05-27 Linde Gmbh Smart gas mixer
JP7200166B2 (ja) * 2020-04-03 2023-01-06 大陽日酸株式会社 混合ガス供給装置及び方法
CN113867434B (zh) * 2021-11-22 2024-01-12 北京七星华创流量计有限公司 气体质量流量控制器
CN115948727A (zh) * 2023-01-10 2023-04-11 江苏微导纳米科技股份有限公司 气体流量校准装置及方法
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange

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Also Published As

Publication number Publication date
CN101256936A (zh) 2008-09-03
JP2008252073A (ja) 2008-10-16
EP1961836A1 (en) 2008-08-27
KR100961793B1 (ko) 2010-06-08
US8074677B2 (en) 2011-12-13
TWI365948B (en) 2012-06-11
KR20080079209A (ko) 2008-08-29
TW200844361A (en) 2008-11-16
JP5582684B2 (ja) 2014-09-03
US20080202609A1 (en) 2008-08-28
CN101256936B (zh) 2011-07-13

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