SG143200A1 - Polishing composition and polishing process - Google Patents
Polishing composition and polishing processInfo
- Publication number
- SG143200A1 SG143200A1 SG200717999-7A SG2007179997A SG143200A1 SG 143200 A1 SG143200 A1 SG 143200A1 SG 2007179997 A SG2007179997 A SG 2007179997A SG 143200 A1 SG143200 A1 SG 143200A1
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- polishing process
- polish
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 8
- 238000007517 polishing process Methods 0.000 title abstract 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- -1 iron ions Chemical class 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010452 phosphate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006318669A JP2008135452A (ja) | 2006-11-27 | 2006-11-27 | 研磨用組成物及び研磨方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG143200A1 true SG143200A1 (en) | 2008-06-27 |
Family
ID=39114993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200717999-7A SG143200A1 (en) | 2006-11-27 | 2007-11-22 | Polishing composition and polishing process |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080120918A1 (ja) |
| EP (1) | EP1925649A3 (ja) |
| JP (1) | JP2008135452A (ja) |
| KR (1) | KR101427418B1 (ja) |
| CN (1) | CN101200628A (ja) |
| SG (1) | SG143200A1 (ja) |
| TW (1) | TW200911936A (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101279969B1 (ko) * | 2008-12-31 | 2013-07-05 | 제일모직주식회사 | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| WO2010140671A1 (ja) * | 2009-06-05 | 2010-12-09 | 株式会社Sumco | シリコンウェーハの研磨方法及びシリコンウェーハ |
| US8551887B2 (en) | 2009-12-22 | 2013-10-08 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a copper-containing substrate |
| KR102028217B1 (ko) | 2011-11-25 | 2019-10-02 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| JP6068791B2 (ja) * | 2011-11-25 | 2017-01-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN104011155B (zh) | 2012-03-30 | 2017-03-15 | 霓达哈斯股份有限公司 | 抛光组合物 |
| CN106604807A (zh) * | 2014-08-29 | 2017-04-26 | 嘉柏微电子材料股份公司 | 用于抛光蓝宝石表面的组合物及方法 |
| JP6423279B2 (ja) * | 2015-02-10 | 2018-11-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR101834418B1 (ko) * | 2015-10-02 | 2018-03-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
| JP2019062078A (ja) | 2017-09-26 | 2019-04-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| WO2019181487A1 (ja) * | 2018-03-23 | 2019-09-26 | 富士フイルム株式会社 | 研磨液および化学的機械的研磨方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2545862B1 (fr) * | 1983-05-11 | 1986-08-22 | Barreau Jean Paul | Perfectionnement aux boites de branchement des conduites d'eaux pluviales, utilisees dans le batiment |
| US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| EP0852615B1 (en) * | 1996-07-25 | 2005-12-14 | DuPont Air Products NanoMaterials L.L.C. | Chemical mechanical polishing composition and process |
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6001269A (en) * | 1997-05-20 | 1999-12-14 | Rodel, Inc. | Method for polishing a composite comprising an insulator, a metal, and titanium |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP4264781B2 (ja) * | 1999-09-20 | 2009-05-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
| US6293848B1 (en) * | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6319096B1 (en) * | 1999-11-15 | 2001-11-20 | Cabot Corporation | Composition and method for planarizing surfaces |
| US6299795B1 (en) * | 2000-01-18 | 2001-10-09 | Praxair S.T. Technology, Inc. | Polishing slurry |
| US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
| JP4954398B2 (ja) * | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| JP2003142435A (ja) * | 2001-10-31 | 2003-05-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US7189684B2 (en) * | 2002-03-04 | 2007-03-13 | Fujimi Incorporated | Polishing composition and method for forming wiring structure using the same |
| JP4083528B2 (ja) * | 2002-10-01 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
| JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| TWI403574B (zh) * | 2005-01-05 | 2013-08-01 | Nitta Haas Inc | Grinding slurry |
| JP2006318669A (ja) | 2005-05-10 | 2006-11-24 | Toshiba Corp | 燃料電池装置 |
-
2006
- 2006-11-27 JP JP2006318669A patent/JP2008135452A/ja active Pending
-
2007
- 2007-11-20 TW TW096143940A patent/TW200911936A/zh unknown
- 2007-11-22 SG SG200717999-7A patent/SG143200A1/en unknown
- 2007-11-26 EP EP07254588A patent/EP1925649A3/en not_active Withdrawn
- 2007-11-26 KR KR1020070120612A patent/KR101427418B1/ko active IP Right Grant
- 2007-11-26 US US11/945,004 patent/US20080120918A1/en not_active Abandoned
- 2007-11-27 CN CNA200710193448XA patent/CN101200628A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20080120918A1 (en) | 2008-05-29 |
| EP1925649A2 (en) | 2008-05-28 |
| EP1925649A3 (en) | 2009-03-04 |
| KR20080047988A (ko) | 2008-05-30 |
| TW200911936A (en) | 2009-03-16 |
| JP2008135452A (ja) | 2008-06-12 |
| CN101200628A (zh) | 2008-06-18 |
| KR101427418B1 (ko) | 2014-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG143200A1 (en) | Polishing composition and polishing process | |
| SG143201A1 (en) | Polishing composition and polishing method | |
| MY150651A (en) | Polishing composition and polishing method | |
| UA91521C2 (ru) | Композиции, содержащие липазу, протеазу и амилазу, предназначенные для лечения недостаточности поджелудочной железы | |
| TW200700545A (en) | Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion | |
| ATE371709T1 (de) | Polierzusammensetzung und poliermethode | |
| TWI263271B (en) | Method for enhancing fluorine utilization | |
| TW200613512A (en) | Luminescent silicon oxide flakes | |
| MX2008001614A (es) | 7-aza-indazoles sustituidos, composiciones que los contienen, procedimiento de fabricacion y utilizacion. | |
| HK1068626A1 (en) | Chemical compounds | |
| MY148323A (en) | Stable, high rate silicon slurry | |
| MY144672A (en) | Inhibitors of cytosolic phospholipase a2 | |
| IL147235A0 (en) | Chemical mechanical polishing systems and methods for their use | |
| TN2009000303A1 (en) | Iron-hydrocarbon complex compounds | |
| MX2007008555A (es) | Amino-imidazolonas para la inhibicion de (-secretasa. | |
| WO2009064365A3 (en) | Compositions and methods for ruthenium and tantalum barrier cmp | |
| MY149715A (en) | Method of polishing nickel-phosphorous | |
| DK1948131T3 (da) | Dexpanthenol-, calciumion- og phosphatfri farmaceutisk sammensætning samt anvendelse af calciumchelatdannere og oftalmologisk kompatible viskositetsregulatorer | |
| MX2010007543A (es) | Inhibidores de iap. | |
| TW200710210A (en) | Slurry for chemical mechanical polishing of aluminum | |
| UA96265C2 (ru) | Композиция и способ ингибирования jak пути передачи сигнала | |
| TW200740968A (en) | Polishing composition for silicon wafer | |
| TW200702041A (en) | Cleaning agent of treating acid gas and method for cleaning with the cleaning agent | |
| MY136721A (en) | Wafer planarization composition and method of use | |
| UA96269C2 (uk) | Інгібітори цистеїнпротеази та їх терапевтичне застосування |