SG143115A1 - Formulation for removal of photoresist, etch residue and barc - Google Patents
Formulation for removal of photoresist, etch residue and barcInfo
- Publication number
- SG143115A1 SG143115A1 SG200705204-6A SG2007052046A SG143115A1 SG 143115 A1 SG143115 A1 SG 143115A1 SG 2007052046 A SG2007052046 A SG 2007052046A SG 143115 A1 SG143115 A1 SG 143115A1
- Authority
- SG
- Singapore
- Prior art keywords
- barc
- photoresist
- formulation
- removal
- etch residue
- Prior art date
Links
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/602,662 US7674755B2 (en) | 2005-12-22 | 2006-11-21 | Formulation for removal of photoresist, etch residue and BARC |
Publications (1)
Publication Number | Publication Date |
---|---|
SG143115A1 true SG143115A1 (en) | 2008-06-27 |
Family
ID=39480229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200705204-6A SG143115A1 (en) | 2006-11-21 | 2007-07-12 | Formulation for removal of photoresist, etch residue and barc |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4499751B2 (ko) |
KR (1) | KR100942009B1 (ko) |
CN (1) | CN101187789B (ko) |
SG (1) | SG143115A1 (ko) |
TW (1) | TWI355569B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101399502B1 (ko) * | 2008-09-19 | 2014-06-27 | 주식회사 동진쎄미켐 | 티에프티 엘시디용 열경화성 수지 박리액 조성물 |
US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
CN102043356B (zh) * | 2009-10-13 | 2012-09-26 | 奇美实业股份有限公司 | 清洗基板用洗净液组成物 |
KR101983202B1 (ko) * | 2011-06-01 | 2019-05-28 | 아반토 퍼포먼스 머티리얼즈, 엘엘씨 | 구리, 텅스텐, 및 다공성의 유전 상수 κ가 낮은 유전체들에 대한 양립성이 향상된 반수성 중합체 제거 조성물 |
CN102902169A (zh) * | 2011-07-29 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | 去除光刻胶层的方法 |
DE102011088885A1 (de) * | 2011-12-16 | 2013-06-20 | Wacker Chemie Ag | Siliconlöser |
US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
KR101420571B1 (ko) * | 2013-07-05 | 2014-07-16 | 주식회사 동진쎄미켐 | 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법 |
CN114706271A (zh) | 2016-03-31 | 2022-07-05 | 富士胶片株式会社 | 半导体制造用处理液及图案形成方法 |
BR112019004949A2 (pt) * | 2016-09-28 | 2019-06-25 | Dow Global Technologies Llc | solventes para uso na indústria de eletrônica |
CN107957661A (zh) * | 2016-10-18 | 2018-04-24 | 东友精细化工有限公司 | 抗蚀剂剥离液组合物及利用其的抗蚀剂的剥离方法 |
US10761423B2 (en) * | 2017-08-30 | 2020-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical composition for tri-layer removal |
TWI778192B (zh) * | 2017-12-15 | 2022-09-21 | 日商東京威力科創股份有限公司 | 在蝕刻殘留物移除期間保護基板上特徵部的水性清潔溶液及方法 |
TWI692679B (zh) * | 2017-12-22 | 2020-05-01 | 美商慧盛材料美國責任有限公司 | 光阻剝除劑 |
CN108753478A (zh) * | 2018-06-19 | 2018-11-06 | 成都青洋电子材料有限公司 | 一种半导体单晶硅清洗剂及其清洗方法 |
CN108998267A (zh) * | 2018-08-29 | 2018-12-14 | 李少伟 | 一种半导体器件防蚀剂清洗剂及制备方法 |
US10952430B2 (en) | 2019-02-06 | 2021-03-23 | Virox Technologies Inc. | Shelf-stable antimicrobial compositions |
US12089590B2 (en) | 2019-02-06 | 2024-09-17 | Virox Technologies, Inc. | Shelf-stable antimicrobial compositions |
TWI749964B (zh) * | 2020-12-24 | 2021-12-11 | 達興材料股份有限公司 | 鹼性清洗組合物、清洗方法和半導體製造方法 |
KR102364962B1 (ko) | 2021-09-01 | 2022-02-18 | 김봉건 | 절삭용 공구 및 이를 포함하는 절삭 공작기계 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060014391A1 (en) * | 2004-07-14 | 2006-01-19 | Kyung-Jin Lee | Method of manufacturing a semiconductor device using a cleaning composition |
US20060234516A1 (en) * | 2005-04-13 | 2006-10-19 | Hong Eun S | Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same |
SG133542A1 (en) * | 2005-12-22 | 2007-07-30 | Air Prod & Chem | Formulation for removal of photoresist, etch residue and barc |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3264405B2 (ja) | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
KR100518714B1 (ko) * | 2002-02-19 | 2005-10-05 | 주식회사 덕성 | 레지스트 박리액 조성물 |
KR100520397B1 (ko) * | 2002-10-29 | 2005-10-11 | 동우 화인켐 주식회사 | 후-스트립 세정제 조성물 및 그를 이용한 포토레지스트스트립 공정 후의 반도체 소자 또는 액정표시소자의 세정방법 |
SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
US6951710B2 (en) * | 2003-05-23 | 2005-10-04 | Air Products And Chemicals, Inc. | Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof |
JP2005215627A (ja) * | 2004-02-02 | 2005-08-11 | Japan Organo Co Ltd | レジスト剥離廃液の再生処理方法及び装置 |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
KR20050110470A (ko) * | 2004-05-19 | 2005-11-23 | 테크노세미켐 주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법 |
US9217929B2 (en) * | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
CN1290962C (zh) * | 2004-12-22 | 2006-12-20 | 中国科学院上海微系统与信息技术研究所 | 高介电材料钛酸锶钡化学机械抛光用的纳米抛光液 |
-
2007
- 2007-01-31 JP JP2007021474A patent/JP4499751B2/ja not_active Expired - Fee Related
- 2007-02-08 TW TW096104641A patent/TWI355569B/zh active
- 2007-02-16 CN CN2007100789737A patent/CN101187789B/zh not_active Expired - Fee Related
- 2007-03-02 KR KR1020070020936A patent/KR100942009B1/ko active IP Right Grant
- 2007-07-12 SG SG200705204-6A patent/SG143115A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060014391A1 (en) * | 2004-07-14 | 2006-01-19 | Kyung-Jin Lee | Method of manufacturing a semiconductor device using a cleaning composition |
US20060234516A1 (en) * | 2005-04-13 | 2006-10-19 | Hong Eun S | Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same |
SG133542A1 (en) * | 2005-12-22 | 2007-07-30 | Air Prod & Chem | Formulation for removal of photoresist, etch residue and barc |
Also Published As
Publication number | Publication date |
---|---|
CN101187789B (zh) | 2012-10-03 |
JP2008129571A (ja) | 2008-06-05 |
KR20080046073A (ko) | 2008-05-26 |
JP4499751B2 (ja) | 2010-07-07 |
KR100942009B1 (ko) | 2010-02-12 |
CN101187789A (zh) | 2008-05-28 |
TWI355569B (en) | 2012-01-01 |
TW200823611A (en) | 2008-06-01 |
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