SG131093A1 - Magnetoresistance effect device - Google Patents

Magnetoresistance effect device

Info

Publication number
SG131093A1
SG131093A1 SG200606725-0A SG2006067250A SG131093A1 SG 131093 A1 SG131093 A1 SG 131093A1 SG 2006067250 A SG2006067250 A SG 2006067250A SG 131093 A1 SG131093 A1 SG 131093A1
Authority
SG
Singapore
Prior art keywords
effect device
magnetoresistance effect
magnetoresistance
effect
Prior art date
Application number
SG200606725-0A
Other languages
English (en)
Inventor
Koji Tsunekawa
David D Djayaprawira
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of SG131093A1 publication Critical patent/SG131093A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Measuring Magnetic Variables (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
SG200606725-0A 2005-09-27 2006-09-27 Magnetoresistance effect device SG131093A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005279559A JP2007095750A (ja) 2005-09-27 2005-09-27 磁気抵抗効果素子

Publications (1)

Publication Number Publication Date
SG131093A1 true SG131093A1 (en) 2007-04-26

Family

ID=37421567

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200902146-0A SG151317A1 (en) 2005-09-27 2006-09-27 Magnetoresistance effect device
SG200606725-0A SG131093A1 (en) 2005-09-27 2006-09-27 Magnetoresistance effect device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200902146-0A SG151317A1 (en) 2005-09-27 2006-09-27 Magnetoresistance effect device

Country Status (6)

Country Link
US (1) US7813088B2 (zh)
JP (1) JP2007095750A (zh)
CN (2) CN1941450A (zh)
GB (1) GB2430539A (zh)
SG (2) SG151317A1 (zh)
TW (1) TW200729568A (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7800868B2 (en) * 2005-12-16 2010-09-21 Seagate Technology Llc Magnetic sensing device including a sense enhancing layer
US7751156B2 (en) * 2006-09-29 2010-07-06 Hitachi Global Storage Technologies Netherlands, B.V. Dual-layer free layer in a tunneling magnetoresistance (TMR) element
US7715156B2 (en) * 2007-01-12 2010-05-11 Tdk Corporation Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element
JP2008227297A (ja) * 2007-03-14 2008-09-25 Tdk Corp トンネル型磁気検出素子及びその製造方法
JP2008252008A (ja) 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗効果素子、およびその製造方法
US8031441B2 (en) * 2007-05-11 2011-10-04 Headway Technologies, Inc. CPP device with an enhanced dR/R ratio
WO2008155995A1 (ja) * 2007-06-19 2008-12-24 Canon Anelva Corporation トンネル磁気抵抗薄膜及び磁性多層膜作製装置
JP5285240B2 (ja) * 2007-06-22 2013-09-11 エイチジーエスティーネザーランドビーブイ 磁気ヘッド及び磁気ヘッドの製造方法
US8154829B2 (en) * 2007-07-23 2012-04-10 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer
US20090122450A1 (en) 2007-11-08 2009-05-14 Headway Technologies, Inc. TMR device with low magnetostriction free layer
US8270125B2 (en) * 2007-12-18 2012-09-18 Hitachi Global Storage Technologies Netherlands B.V. Tunnel junction magnetoresistive sensor having a near zero magnetostriction free layer
US7863911B2 (en) * 2007-12-31 2011-01-04 Hitachi Global Storage Technologies, Netherlands, B.V. Test device and method for measurement of tunneling magnetoresistance properties of a manufacturable wafer by the current-in-plane-tunneling technique
WO2009096012A1 (ja) * 2008-01-30 2009-08-06 Fujitsu Limited 磁気抵抗効果素子、磁気ヘッド、および、情報記憶装置
JP2010016260A (ja) * 2008-07-04 2010-01-21 Alps Electric Co Ltd 磁気センサ
US8747629B2 (en) * 2008-09-22 2014-06-10 Headway Technologies, Inc. TMR device with novel free layer
US8503135B2 (en) 2011-09-21 2013-08-06 Seagate Technology Llc Magnetic sensor with enhanced magnetoresistance ratio
CN102364618B (zh) * 2011-11-10 2013-03-06 中国科学院物理研究所 一种具有垂直磁各向异性的多层膜材料
JP5990808B2 (ja) * 2012-06-13 2016-09-14 株式会社Ｉｆｇ カー効果を利用した表面応力測定装置
US9618589B2 (en) * 2013-10-18 2017-04-11 Infineon Technologies Ag First and second magneto-resistive sensors formed by first and second sections of a layer stack
US10109676B2 (en) 2015-10-15 2018-10-23 Samsung Electronics Co., Ltd. MTJ structures including magnetism induction pattern and magnetoresistive random access memory devices including the same
JP6297104B2 (ja) * 2016-08-04 2018-03-20 株式会社東芝 磁気記憶装置及びその製造方法
KR102566954B1 (ko) * 2016-08-04 2023-08-16 삼성전자주식회사 자기 메모리 소자 및 그 제조 방법

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3417645A1 (de) 1984-05-12 1985-11-14 Hoechst Ag, 6230 Frankfurt Lichtempfindliches aufzeichnungsmaterial fuer die herstellung von flachdruckplatten
JPH08287422A (ja) 1995-04-07 1996-11-01 Alps Electric Co Ltd 磁気抵抗効果型ヘッド
JP3207094B2 (ja) * 1995-08-21 2001-09-10 松下電器産業株式会社 磁気抵抗効果素子及びメモリー素子
WO2001056090A1 (fr) 2000-01-28 2001-08-02 Sharp Kabushiki Kaisha Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance
JP3607609B2 (ja) 2000-12-28 2005-01-05 株式会社東芝 磁気抵抗効果素子、磁気メモリ、磁気ヘッド、及び磁気再生装置
JP3961777B2 (ja) 2001-03-26 2007-08-22 株式会社東芝 磁気センサー
WO2002099905A1 (fr) 2001-05-31 2002-12-12 National Institute Of Advanced Industrial Science And Technology Element de magnetoresistance tunnel
JP4304568B2 (ja) 2002-04-23 2009-07-29 独立行政法人産業技術総合研究所 平坦化トンネル磁気抵抗素子
JP2003092442A (ja) * 2001-07-13 2003-03-28 Alps Electric Co Ltd 磁気検出素子及びその製造方法
US7023670B2 (en) * 2001-11-19 2006-04-04 Alps Electric Co., Ltd. Magnetic sensing element with in-stack biasing using ferromagnetic sublayers
JP4100025B2 (ja) * 2002-04-09 2008-06-11 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
JP3678213B2 (ja) * 2002-06-20 2005-08-03 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置、磁気抵抗効果素子及び磁気メモリ装置の製造方法
JP3729159B2 (ja) * 2002-06-26 2005-12-21 ソニー株式会社 磁気メモリ装置
JP2004071186A (ja) 2002-08-01 2004-03-04 Matsushita Electric Ind Co Ltd 塗膜付ランプ用管球の製造方法
JP4178867B2 (ja) * 2002-08-02 2008-11-12 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
JP2004071897A (ja) * 2002-08-07 2004-03-04 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
US6831312B2 (en) * 2002-08-30 2004-12-14 Freescale Semiconductor, Inc. Amorphous alloys for magnetic devices
US6844999B2 (en) * 2002-09-10 2005-01-18 Headway Technologies, Inc. Boron doped CoFe for GMR free layer
JP2004128015A (ja) * 2002-09-30 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
US6828260B2 (en) 2002-10-29 2004-12-07 Hewlett-Packard Development Company, L.P. Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device
US20040091743A1 (en) * 2002-11-12 2004-05-13 International Business Machines Corporation Magnetoresistance sensor with a controlled-magnetostriction Co-Fe free-layer film
US6891714B2 (en) * 2003-02-26 2005-05-10 Tdk Corporation Multi-layered unit including electrode and dielectric layer
US6885540B2 (en) * 2003-02-26 2005-04-26 Tdk Corporation Multi-layered unit including electrode and dielectric layer
CN1302845C (zh) * 2004-03-11 2007-03-07 上海师范大学 Co－Fe－B非晶态合金催化剂及其制备方法和应用
JP2006032464A (ja) * 2004-07-13 2006-02-02 Toshiba Corp 磁気ランダムアクセスメモリ
JP4460965B2 (ja) * 2004-07-22 2010-05-12 株式会社東芝 磁気ランダムアクセスメモリ
JPWO2006022183A1 (ja) * 2004-08-27 2008-05-08 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
US7241631B2 (en) * 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
US7449254B2 (en) * 2005-01-21 2008-11-11 General Electric Company Environmental barrier coating with physical barrier layer for silicon-comprising materials
US7750421B2 (en) * 2007-07-23 2010-07-06 Magic Technologies, Inc. High performance MTJ element for STT-RAM and method for making the same
US8497559B2 (en) * 2007-10-10 2013-07-30 Magic Technologies, Inc. MRAM with means of controlling magnetic anisotropy

Also Published As

Publication number Publication date
GB2430539A (en) 2007-03-28
SG151317A1 (en) 2009-04-30
US20070070553A1 (en) 2007-03-29
GB0618843D0 (en) 2006-11-01
CN101587935A (zh) 2009-11-25
US7813088B2 (en) 2010-10-12
CN101587935B (zh) 2011-02-02
JP2007095750A (ja) 2007-04-12
CN1941450A (zh) 2007-04-04
TW200729568A (en) 2007-08-01

Similar Documents

Publication Publication Date Title
SG131093A1 (en) Magnetoresistance effect device
ZA200806011B (en) Compression-distraction device
GB0521472D0 (en) Device
EP1888875A4 (en) PACKER ANCHORAGE DEVICE
GB0519472D0 (en) Device
EP1840365A4 (en) EXHAUST GAS RECIRCULATION DEVICE
EP1965848A4 (en) NEW DEVICE
GB0505013D0 (en) Device
EP2017635A4 (en) MAGNETIC DEVICE
GB0617951D0 (en) Device
GB0521474D0 (en) Device
GB0521471D0 (en) Device
HK1125007A1 (en) Securing device
HK1103456A1 (en) Field device
GB0511943D0 (en) Device
GB2431033A9 (en) Anti-tallgating device
GB0524805D0 (en) Cricothyroidotomy device
GB2431352B (en) Device
EP1954554A4 (en) RETENTION DEVICE
GB2426444B (en) Monitor-holding device
GB0521468D0 (en) Device
TWM291803U (en) ice-therapy device
GB0518201D0 (en) Device
GB0513575D0 (en) Carrying device
IL166541A0 (en) Device