SG122896A1 - Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate - Google Patents

Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate

Info

Publication number
SG122896A1
SG122896A1 SG200507044A SG200507044A SG122896A1 SG 122896 A1 SG122896 A1 SG 122896A1 SG 200507044 A SG200507044 A SG 200507044A SG 200507044 A SG200507044 A SG 200507044A SG 122896 A1 SG122896 A1 SG 122896A1
Authority
SG
Singapore
Prior art keywords
substrate
methods
processing apparatus
plasma processing
selected areas
Prior art date
Application number
SG200507044A
Other languages
English (en)
Inventor
Robert S Condrashoff
James D Getty
James S Tyler
Original Assignee
Nordson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordson Corp filed Critical Nordson Corp
Publication of SG122896A1 publication Critical patent/SG122896A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
SG200507044A 2004-12-03 2005-11-18 Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate SG122896A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/003,062 US7635418B2 (en) 2004-12-03 2004-12-03 Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate

Publications (1)

Publication Number Publication Date
SG122896A1 true SG122896A1 (en) 2006-06-29

Family

ID=36572886

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200507044A SG122896A1 (en) 2004-12-03 2005-11-18 Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate

Country Status (5)

Country Link
US (2) US7635418B2 (ja)
JP (1) JP5301765B2 (ja)
CN (1) CN100468615C (ja)
SG (1) SG122896A1 (ja)
TW (1) TWI394865B (ja)

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* Cited by examiner, † Cited by third party
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US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
US20060201910A1 (en) * 2004-12-22 2006-09-14 Nordson Corporation Methods for removing extraneous amounts of molding material from a substrate
US7842223B2 (en) * 2004-12-22 2010-11-30 Nordson Corporation Plasma process for removing excess molding material from a substrate
DE102008064047A1 (de) * 2008-10-02 2010-04-08 Continental Teves Ag & Co. Ohg Sensorelement und Trägerelement zur Herstellung eines Sensors
DE102008064046A1 (de) * 2008-10-02 2010-04-08 Continental Teves Ag & Co. Ohg Verfahren zur Herstellung eines Geschwindigkeits-Sensorelementes
US8627835B2 (en) * 2011-04-13 2014-01-14 Intermolecular, Inc. In-situ cleaning assembly
US10983721B2 (en) * 2018-07-13 2021-04-20 Fungible, Inc. Deterministic finite automata node construction and memory mapping for regular expression accelerator
CN109136836A (zh) * 2018-10-12 2019-01-04 京东方科技集团股份有限公司 掩膜板、晶圆、蒸镀装置及蒸镀方法
US11263190B2 (en) 2019-09-26 2022-03-01 Fungible, Inc. Data ingestion and storage by data processing unit having stream-processing hardware accelerators
US11636115B2 (en) 2019-09-26 2023-04-25 Fungible, Inc. Query processing using data processing units having DFA/NFA hardware accelerators
US11636154B2 (en) 2019-09-26 2023-04-25 Fungible, Inc. Data flow graph-driven analytics platform using data processing units having hardware accelerators
US11934964B2 (en) 2020-03-20 2024-03-19 Microsoft Technology Licensing, Llc Finite automata global counter in a data flow graph-driven analytics platform having analytics hardware accelerators

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US4534921A (en) 1984-03-06 1985-08-13 Asm Fico Tooling, B.V. Method and apparatus for mold cleaning by reverse sputtering
US4599970A (en) * 1985-03-11 1986-07-15 Rca Corporation Apparatus for coating a selected area of the surface of an object
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US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
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JP3400770B2 (ja) 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
US6489178B2 (en) 2000-01-26 2002-12-03 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
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US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
US20060201910A1 (en) 2004-12-22 2006-09-14 Nordson Corporation Methods for removing extraneous amounts of molding material from a substrate
US7842223B2 (en) 2004-12-22 2010-11-30 Nordson Corporation Plasma process for removing excess molding material from a substrate
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Also Published As

Publication number Publication date
JP5301765B2 (ja) 2013-09-25
US20100075505A1 (en) 2010-03-25
CN1815685A (zh) 2006-08-09
CN100468615C (zh) 2009-03-11
US7635418B2 (en) 2009-12-22
US20060118239A1 (en) 2006-06-08
JP2006203174A (ja) 2006-08-03
TW200632138A (en) 2006-09-16
US8329590B2 (en) 2012-12-11
TWI394865B (zh) 2013-05-01

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