SG115421A1 - Integrated circuit metallization using a titanium/aluminium alloy - Google Patents

Integrated circuit metallization using a titanium/aluminium alloy

Info

Publication number
SG115421A1
SG115421A1 SG200106489A SG200106489A SG115421A1 SG 115421 A1 SG115421 A1 SG 115421A1 SG 200106489 A SG200106489 A SG 200106489A SG 200106489 A SG200106489 A SG 200106489A SG 115421 A1 SG115421 A1 SG 115421A1
Authority
SG
Singapore
Prior art keywords
titanium
integrated circuit
aluminium alloy
circuit metallization
metallization
Prior art date
Application number
SG200106489A
Other languages
English (en)
Inventor
D Snyder Ridky
G Long Robert
W Hula David
D Crook Mark
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of SG115421A1 publication Critical patent/SG115421A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412Deposition of metallic or metal-silicide materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/093Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425Barrier, adhesion or liner layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
SG200106489A 2000-10-27 2001-10-19 Integrated circuit metallization using a titanium/aluminium alloy SG115421A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/698,459 US6646346B1 (en) 2000-10-27 2000-10-27 Integrated circuit metallization using a titanium/aluminum alloy

Publications (1)

Publication Number Publication Date
SG115421A1 true SG115421A1 (en) 2005-10-28

Family

ID=24805338

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200106489A SG115421A1 (en) 2000-10-27 2001-10-19 Integrated circuit metallization using a titanium/aluminium alloy

Country Status (4)

Country Link
US (2) US6646346B1 (https=)
JP (2) JP2002151515A (https=)
DE (1) DE10152913A1 (https=)
SG (1) SG115421A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7121997B2 (en) * 1999-06-09 2006-10-17 Ethicon, Inc. Surgical instrument and method for treating female urinary incontinence
US7001841B2 (en) * 2002-08-26 2006-02-21 Matsushita Electric Industrial Co., Ltd. Production method of semiconductor device
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
KR20090128900A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 Coms 이미지 센서의 제조방법
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP7070848B2 (ja) * 2018-07-26 2022-05-18 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
JPH05267292A (ja) * 1992-03-19 1993-10-15 Fujitsu Ltd 半導体装置の製造方法
US5747879A (en) * 1995-09-29 1998-05-05 Intel Corporation Interface between titanium and aluminum-alloy in metal stack for integrated circuit
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US5838052A (en) * 1996-03-07 1998-11-17 Micron Technology, Inc. Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum
JPH09289212A (ja) * 1996-04-19 1997-11-04 Ricoh Co Ltd 半導体装置の積層配線およびその製造方法
JP3500308B2 (ja) * 1997-08-13 2004-02-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 集積回路
JPH11214506A (ja) * 1998-01-20 1999-08-06 Nec Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP4636414B2 (ja) 2011-02-23
JP2002151515A (ja) 2002-05-24
US6646346B1 (en) 2003-11-11
JP2007110103A (ja) 2007-04-26
DE10152913A1 (de) 2002-05-29
US6903017B2 (en) 2005-06-07
US20040038453A1 (en) 2004-02-26

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