SG115421A1 - Integrated circuit metallization using a titanium/aluminium alloy - Google Patents
Integrated circuit metallization using a titanium/aluminium alloyInfo
- Publication number
- SG115421A1 SG115421A1 SG200106489A SG200106489A SG115421A1 SG 115421 A1 SG115421 A1 SG 115421A1 SG 200106489 A SG200106489 A SG 200106489A SG 200106489 A SG200106489 A SG 200106489A SG 115421 A1 SG115421 A1 SG 115421A1
- Authority
- SG
- Singapore
- Prior art keywords
- titanium
- integrated circuit
- aluminium alloy
- circuit metallization
- metallization
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/412—Deposition of metallic or metal-silicide materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
- H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/698,459 US6646346B1 (en) | 2000-10-27 | 2000-10-27 | Integrated circuit metallization using a titanium/aluminum alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG115421A1 true SG115421A1 (en) | 2005-10-28 |
Family
ID=24805338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200106489A SG115421A1 (en) | 2000-10-27 | 2001-10-19 | Integrated circuit metallization using a titanium/aluminium alloy |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6646346B1 (https=) |
| JP (2) | JP2002151515A (https=) |
| DE (1) | DE10152913A1 (https=) |
| SG (1) | SG115421A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7121997B2 (en) * | 1999-06-09 | 2006-10-17 | Ethicon, Inc. | Surgical instrument and method for treating female urinary incontinence |
| US7001841B2 (en) * | 2002-08-26 | 2006-02-21 | Matsushita Electric Industrial Co., Ltd. | Production method of semiconductor device |
| US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
| KR20090128900A (ko) * | 2008-06-11 | 2009-12-16 | 크로스텍 캐피탈, 엘엘씨 | Coms 이미지 센서의 제조방법 |
| US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
| JP7070848B2 (ja) * | 2018-07-26 | 2022-05-18 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4995049A (en) * | 1990-05-29 | 1991-02-19 | Eastman Kodak Company | Optoelectronic integrated circuit |
| JPH05267292A (ja) * | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5747879A (en) * | 1995-09-29 | 1998-05-05 | Intel Corporation | Interface between titanium and aluminum-alloy in metal stack for integrated circuit |
| US5700718A (en) * | 1996-02-05 | 1997-12-23 | Micron Technology, Inc. | Method for increased metal interconnect reliability in situ formation of titanium aluminide |
| US5838052A (en) * | 1996-03-07 | 1998-11-17 | Micron Technology, Inc. | Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum |
| JPH09289212A (ja) * | 1996-04-19 | 1997-11-04 | Ricoh Co Ltd | 半導体装置の積層配線およびその製造方法 |
| JP3500308B2 (ja) * | 1997-08-13 | 2004-02-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 集積回路 |
| JPH11214506A (ja) * | 1998-01-20 | 1999-08-06 | Nec Corp | 半導体装置及びその製造方法 |
-
2000
- 2000-10-27 US US09/698,459 patent/US6646346B1/en not_active Expired - Lifetime
-
2001
- 2001-10-19 SG SG200106489A patent/SG115421A1/en unknown
- 2001-10-24 JP JP2001326119A patent/JP2002151515A/ja active Pending
- 2001-10-26 DE DE10152913A patent/DE10152913A1/de not_active Ceased
-
2003
- 2003-08-26 US US10/648,735 patent/US6903017B2/en not_active Expired - Lifetime
-
2006
- 2006-09-15 JP JP2006250729A patent/JP4636414B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4636414B2 (ja) | 2011-02-23 |
| JP2002151515A (ja) | 2002-05-24 |
| US6646346B1 (en) | 2003-11-11 |
| JP2007110103A (ja) | 2007-04-26 |
| DE10152913A1 (de) | 2002-05-29 |
| US6903017B2 (en) | 2005-06-07 |
| US20040038453A1 (en) | 2004-02-26 |
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