SG114607A1 - Method and apparatus for performing rule gate shrink utilizing dipole illumination - Google Patents
Method and apparatus for performing rule gate shrink utilizing dipole illuminationInfo
- Publication number
- SG114607A1 SG114607A1 SG200301489A SG200301489A SG114607A1 SG 114607 A1 SG114607 A1 SG 114607A1 SG 200301489 A SG200301489 A SG 200301489A SG 200301489 A SG200301489 A SG 200301489A SG 114607 A1 SG114607 A1 SG 114607A1
- Authority
- SG
- Singapore
- Prior art keywords
- dipole illumination
- gate
- component mask
- features
- pattern
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Image Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36653702P | 2002-03-25 | 2002-03-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG114607A1 true SG114607A1 (en) | 2005-09-28 |
Family
ID=27805317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200301489A SG114607A1 (en) | 2002-03-25 | 2003-03-25 | Method and apparatus for performing rule gate shrink utilizing dipole illumination |
Country Status (7)
Country | Link |
---|---|
US (1) | US6915505B2 (zh) |
EP (1) | EP1349003A3 (zh) |
JP (1) | JP2003332232A (zh) |
KR (1) | KR100566153B1 (zh) |
CN (1) | CN100338528C (zh) |
SG (1) | SG114607A1 (zh) |
TW (1) | TWI293476B (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI315027B (en) | 2002-04-23 | 2009-09-21 | Canon Kabushiki Kaish | Mask designing method, and exposure method for illuminatiing a mask and exposing an object |
EP1385052B1 (en) * | 2002-07-26 | 2006-05-31 | ASML MaskTools B.V. | Orientation dependent shielding for use with dipole illumination techniques |
SG137657A1 (en) * | 2002-11-12 | 2007-12-28 | Asml Masktools Bv | Method and apparatus for performing model-based layout conversion for use with dipole illumination |
US6968532B2 (en) * | 2003-10-08 | 2005-11-22 | Intel Corporation | Multiple exposure technique to pattern tight contact geometries |
SG111289A1 (en) * | 2003-11-05 | 2005-05-30 | Asml Masktools Bv | A method for performing transmission tuning of a mask pattern to improve process latitude |
KR100599510B1 (ko) * | 2003-12-31 | 2006-07-13 | 동부일렉트로닉스 주식회사 | 미세 홀 포토마스크 제조방법 |
US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
US7667821B2 (en) * | 2004-06-04 | 2010-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-focus scanning with a tilted mask or wafer |
KR100598980B1 (ko) * | 2004-09-17 | 2006-07-12 | 주식회사 하이닉스반도체 | 다이폴 노광 장치에서의 수직 패턴의 레이아웃 |
US7372540B2 (en) * | 2004-10-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100620190B1 (ko) * | 2004-12-29 | 2006-09-01 | 동부일렉트로닉스 주식회사 | 게이트 라인의 스케일링 방법 |
WO2006100641A2 (en) * | 2005-03-24 | 2006-09-28 | Koninklijke Philips Electronics N.V. | Static random access memory cells with shared contacts |
CN1908812B (zh) * | 2005-04-12 | 2012-02-22 | Asml蒙片工具有限公司 | 执行双重曝光光刻的方法、程序产品和设备 |
WO2006127538A2 (en) * | 2005-05-20 | 2006-11-30 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
US7395516B2 (en) * | 2005-05-20 | 2008-07-01 | Cadence Design Systems, Inc. | Manufacturing aware design and design aware manufacturing |
US8132130B2 (en) * | 2005-06-22 | 2012-03-06 | Asml Masktools B.V. | Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process |
US7560199B2 (en) * | 2005-10-20 | 2009-07-14 | Chartered Semiconductor Manufacturing Ltd. | Polarizing photolithography system |
US7569309B2 (en) * | 2005-11-09 | 2009-08-04 | Texas Instruments Incorporated | Gate critical dimension variation by use of ghost features |
EP1843202B1 (en) * | 2006-04-06 | 2015-02-18 | ASML Netherlands B.V. | Method for performing dark field double dipole lithography |
KR100771550B1 (ko) | 2006-09-29 | 2007-10-31 | 주식회사 하이닉스반도체 | 포토마스크 및 그 형성방법 |
US7966585B2 (en) * | 2006-12-13 | 2011-06-21 | Mentor Graphics Corporation | Selective shielding for multiple exposure masks |
US7914975B2 (en) * | 2007-04-10 | 2011-03-29 | International Business Machines Corporation | Multiple exposure lithography method incorporating intermediate layer patterning |
KR100935733B1 (ko) | 2008-06-20 | 2010-01-08 | 주식회사 하이닉스반도체 | 피치 변화 구간을 포함하는 레이아웃 보정방법 |
KR20120081657A (ko) * | 2010-12-15 | 2012-07-20 | 삼성전자주식회사 | 테스트 마스크 셋트 및 마스크 셋트 |
CN102445834A (zh) * | 2011-09-15 | 2012-05-09 | 上海华力微电子有限公司 | 一种sram栅极尺寸的光学建模临近修正方法 |
US8527915B2 (en) * | 2011-11-01 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for modifying doped region design layout during mask preparation to tune device performance |
US10489778B2 (en) * | 2013-11-24 | 2019-11-26 | Zanguli Llc | Secure payment card |
US9529268B2 (en) * | 2014-04-03 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for improving pattern transfer |
CN106292187A (zh) * | 2015-05-13 | 2017-01-04 | 鸿富锦精密工业(深圳)有限公司 | 曝光方法 |
KR102495912B1 (ko) * | 2018-08-10 | 2023-02-03 | 삼성전자 주식회사 | 표준 셀을 포함하는 집적 회로 및 이를 제조하기 위한 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5821034A (en) * | 1995-09-29 | 1998-10-13 | Hyundai Electronics Industries, Co., Ltd. | Method for forming micro patterns of semiconductor devices |
EP0852029B1 (en) * | 1995-09-21 | 2000-08-16 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using an off axis illumination with twisting dipole and polarizing apertures |
EP1091252A2 (en) * | 1999-09-29 | 2001-04-11 | Asm Lithography B.V. | Lithographic method and apparatus |
US20010036732A1 (en) * | 2000-04-27 | 2001-11-01 | Nec Corporation | Method of manufacturing semiconductor device having minute gate electrodes |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5881125A (en) * | 1992-09-25 | 1999-03-09 | Intel Corporation | Attenuated phase-shifted reticle using sub-resolution pattern |
US5877964A (en) * | 1997-01-10 | 1999-03-02 | International Business Machines Corporation | Semiconductor device compensation system and method |
TW512424B (en) * | 2000-05-01 | 2002-12-01 | Asml Masktools Bv | Hybrid phase-shift mask |
US6553562B2 (en) * | 2001-05-04 | 2003-04-22 | Asml Masktools B.V. | Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques |
US6625802B2 (en) * | 2002-02-01 | 2003-09-23 | Intel Corporation | Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography |
-
2003
- 2003-03-25 CN CNB031286380A patent/CN100338528C/zh not_active Expired - Fee Related
- 2003-03-25 SG SG200301489A patent/SG114607A1/en unknown
- 2003-03-25 EP EP03251874A patent/EP1349003A3/en not_active Ceased
- 2003-03-25 TW TW092106630A patent/TWI293476B/zh not_active IP Right Cessation
- 2003-03-25 US US10/395,888 patent/US6915505B2/en not_active Expired - Lifetime
- 2003-03-25 KR KR1020030018562A patent/KR100566153B1/ko not_active IP Right Cessation
- 2003-03-25 JP JP2003124533A patent/JP2003332232A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0852029B1 (en) * | 1995-09-21 | 2000-08-16 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using an off axis illumination with twisting dipole and polarizing apertures |
US5821034A (en) * | 1995-09-29 | 1998-10-13 | Hyundai Electronics Industries, Co., Ltd. | Method for forming micro patterns of semiconductor devices |
EP1091252A2 (en) * | 1999-09-29 | 2001-04-11 | Asm Lithography B.V. | Lithographic method and apparatus |
US20010036732A1 (en) * | 2000-04-27 | 2001-11-01 | Nec Corporation | Method of manufacturing semiconductor device having minute gate electrodes |
Also Published As
Publication number | Publication date |
---|---|
KR20030077446A (ko) | 2003-10-01 |
US6915505B2 (en) | 2005-07-05 |
EP1349003A2 (en) | 2003-10-01 |
KR100566153B1 (ko) | 2006-03-31 |
CN100338528C (zh) | 2007-09-19 |
US20040003368A1 (en) | 2004-01-01 |
EP1349003A3 (en) | 2004-04-07 |
TW200306615A (en) | 2003-11-16 |
CN1450411A (zh) | 2003-10-22 |
TWI293476B (en) | 2008-02-11 |
JP2003332232A (ja) | 2003-11-21 |
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