SG11202109106QA - Functional hydrogen silsesquioxane resins and the use thereof - Google Patents
Functional hydrogen silsesquioxane resins and the use thereofInfo
- Publication number
- SG11202109106QA SG11202109106QA SG11202109106QA SG11202109106QA SG11202109106QA SG 11202109106Q A SG11202109106Q A SG 11202109106QA SG 11202109106Q A SG11202109106Q A SG 11202109106QA SG 11202109106Q A SG11202109106Q A SG 11202109106QA SG 11202109106Q A SG11202109106Q A SG 11202109106QA
- Authority
- SG
- Singapore
- Prior art keywords
- hydrogen silsesquioxane
- silsesquioxane resins
- functional hydrogen
- functional
- resins
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Silicon Polymers (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20195142A FI128886B (en) | 2019-02-25 | 2019-02-25 | Functional hydrogen silicon oxane polymers and their uses |
PCT/FI2020/050121 WO2020174126A1 (en) | 2019-02-25 | 2020-02-25 | Functional hydrogen silsesquioxane resins and the use thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202109106QA true SG11202109106QA (en) | 2021-09-29 |
Family
ID=69770933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202109106QA SG11202109106QA (en) | 2019-02-25 | 2020-02-25 | Functional hydrogen silsesquioxane resins and the use thereof |
Country Status (9)
Country | Link |
---|---|
US (1) | US20220162391A1 (zh) |
EP (1) | EP3931639A1 (zh) |
JP (1) | JP2022521442A (zh) |
KR (1) | KR20210132677A (zh) |
CN (1) | CN111607089B (zh) |
FI (1) | FI128886B (zh) |
SG (1) | SG11202109106QA (zh) |
TW (1) | TWI842839B (zh) |
WO (1) | WO2020174126A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115826354B (zh) * | 2022-11-18 | 2023-08-25 | 之江实验室 | 基于硅氢加成反应的飞秒激光光刻胶及制备、图案化方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3499032B2 (ja) * | 1995-02-02 | 2004-02-23 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物、その硬化方法及びパターン形成方法 |
JP3628098B2 (ja) * | 1996-03-29 | 2005-03-09 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物およびこれを用いた硬化物パターンの製造方法 |
US5973095A (en) * | 1997-04-21 | 1999-10-26 | Alliedsignal, Inc. | Synthesis of hydrogensilsesquioxane and organohydridosiloxane resins |
WO2003044078A1 (en) * | 2001-11-15 | 2003-05-30 | Honeywell International Inc. | Anti-reflective coatings for photolithography and methods of preparation thereof |
DE10137109A1 (de) * | 2001-07-30 | 2003-02-27 | Infineon Technologies Ag | Siliziumhaltiger Resist für die Fotolithografie |
JP4819676B2 (ja) * | 2003-07-03 | 2011-11-24 | ダウ・コーニング・コーポレイション | 感光性シルセスキオキサン樹脂 |
US6939664B2 (en) * | 2003-10-24 | 2005-09-06 | International Business Machines Corporation | Low-activation energy silicon-containing resist system |
JP2006117846A (ja) * | 2004-10-22 | 2006-05-11 | Hitachi Chem Co Ltd | パターン形成用樹脂組成物及びパターン形成方法 |
KR101247545B1 (ko) * | 2004-11-02 | 2013-03-26 | 다우 코닝 코포레이션 | 레지스트 조성물 |
JP2006143835A (ja) * | 2004-11-18 | 2006-06-08 | Hitachi Chem Co Ltd | 放射線硬化性樹脂組成物、これを用いた光導波路、及び光導路の製造方法 |
JP2006169391A (ja) * | 2004-12-16 | 2006-06-29 | Hitachi Chem Co Ltd | 放射線硬化性樹脂組成物及びこれを用いた光導波路並びに光導波路の製造方法 |
JP4660182B2 (ja) * | 2004-12-20 | 2011-03-30 | 東レ・ダウコーニング株式会社 | 活性化エネルギー線硬化性シリコーン組成物及びそれを用いたネガ型パターン形成方法 |
JP2007133185A (ja) * | 2005-11-10 | 2007-05-31 | Tokyo Ohka Kogyo Co Ltd | 感光性樹脂組成物及びパターン形成方法 |
JP2007154047A (ja) * | 2005-12-05 | 2007-06-21 | Jsr Corp | ポリシロキサン及び感放射線性樹脂組成物 |
JP5120547B2 (ja) * | 2006-02-02 | 2013-01-16 | Jsr株式会社 | 有機シリカ系膜およびその形成方法、半導体装置の絶縁膜形成用組成物およびその製造方法、ならびに配線構造体および半導体装置 |
JP5662338B2 (ja) * | 2008-12-10 | 2015-01-28 | ダウ コーニング コーポレーションDow Corning Corporation | シルセスキオキサン樹脂 |
SG177241A1 (en) * | 2009-07-23 | 2012-02-28 | Dow Corning | Method and materials for double patterning |
US8475667B2 (en) * | 2010-06-22 | 2013-07-02 | International Business Machines Corporation | Method of patterning photosensitive material on a substrate containing a latent acid generator |
KR101957746B1 (ko) * | 2011-03-29 | 2019-03-15 | 다우 실리콘즈 코포레이션 | 디바이스 제조에 사용하기 위한 광-패턴화가능하고 현상가능한 실세스퀴옥산 수지 |
WO2016208300A1 (ja) * | 2015-06-24 | 2016-12-29 | 富士フイルム株式会社 | パターン形成方法、積層体、及び、有機溶剤現像用レジスト組成物 |
JP7265356B2 (ja) * | 2016-05-03 | 2023-04-26 | ダウ シリコーンズ コーポレーション | シルセスキオキサン樹脂及びオキサアミン組成物 |
TW201806779A (zh) * | 2016-05-16 | 2018-03-01 | 道康寧公司 | 用於顯示裝置基板處理之包括矽倍半氧烷聚合物及矽烷中至少一者的黏合劑剝離層 |
JP6930242B2 (ja) * | 2017-06-19 | 2021-09-01 | 東亞合成株式会社 | 半導体装置及びその製造方法 |
-
2019
- 2019-02-25 FI FI20195142A patent/FI128886B/en active IP Right Grant
-
2020
- 2020-02-25 JP JP2021549688A patent/JP2022521442A/ja active Pending
- 2020-02-25 EP EP20709641.3A patent/EP3931639A1/en active Pending
- 2020-02-25 WO PCT/FI2020/050121 patent/WO2020174126A1/en unknown
- 2020-02-25 US US17/433,630 patent/US20220162391A1/en active Pending
- 2020-02-25 TW TW109106031A patent/TWI842839B/zh active
- 2020-02-25 KR KR1020217030128A patent/KR20210132677A/ko not_active Application Discontinuation
- 2020-02-25 CN CN202010114667.XA patent/CN111607089B/zh active Active
- 2020-02-25 SG SG11202109106QA patent/SG11202109106QA/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20210132677A (ko) | 2021-11-04 |
TW202041599A (zh) | 2020-11-16 |
EP3931639A1 (en) | 2022-01-05 |
CN111607089B (zh) | 2023-10-10 |
JP2022521442A (ja) | 2022-04-07 |
FI128886B (en) | 2021-02-26 |
WO2020174126A1 (en) | 2020-09-03 |
TWI842839B (zh) | 2024-05-21 |
CN111607089A (zh) | 2020-09-01 |
US20220162391A1 (en) | 2022-05-26 |
FI20195142A1 (en) | 2020-08-26 |
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