SG11202107162UA - Plasma treatment device and plasma treatment method - Google Patents

Plasma treatment device and plasma treatment method

Info

Publication number
SG11202107162UA
SG11202107162UA SG11202107162UA SG11202107162UA SG11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA SG 11202107162U A SG11202107162U A SG 11202107162UA
Authority
SG
Singapore
Prior art keywords
plasma treatment
treatment device
treatment method
plasma
treatment
Prior art date
Application number
SG11202107162UA
Other languages
English (en)
Inventor
Chishio Koshimizu
Shinji Kubota
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11202107162UA publication Critical patent/SG11202107162UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG11202107162UA 2019-01-09 2019-12-17 Plasma treatment device and plasma treatment method SG11202107162UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019001662 2019-01-09
JP2019018833 2019-02-05
PCT/JP2019/049499 WO2020145051A1 (ja) 2019-01-09 2019-12-17 プラズマ処理装置及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
SG11202107162UA true SG11202107162UA (en) 2021-07-29

Family

ID=71521294

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202107162UA SG11202107162UA (en) 2019-01-09 2019-12-17 Plasma treatment device and plasma treatment method

Country Status (7)

Country Link
US (1) US20220084787A1 (enExample)
JP (4) JP7297795B2 (enExample)
KR (1) KR20210111269A (enExample)
CN (2) CN113228830B (enExample)
SG (1) SG11202107162UA (enExample)
TW (2) TWI849020B (enExample)
WO (1) WO2020145051A1 (enExample)

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US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7297795B2 (ja) * 2019-01-09 2023-06-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
KR102827481B1 (ko) 2019-01-22 2025-06-30 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
JP7309799B2 (ja) * 2020-10-30 2023-07-18 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7737401B2 (ja) 2020-12-10 2025-09-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
TW202247235A (zh) * 2021-02-04 2022-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
WO2023189292A1 (ja) * 2022-03-31 2023-10-05 東京エレクトロン株式会社 プラズマ処理装置
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US20240055244A1 (en) * 2022-08-10 2024-02-15 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
JP2024094788A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電源装置
WO2025057636A1 (ja) * 2023-09-15 2025-03-20 東京エレクトロン株式会社 プラズマ処理装置

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Also Published As

Publication number Publication date
TW202431904A (zh) 2024-08-01
JP7297795B2 (ja) 2023-06-26
KR20210111269A (ko) 2021-09-10
JP2025166257A (ja) 2025-11-05
JP7734239B2 (ja) 2025-09-04
JP7519507B2 (ja) 2024-07-19
US20220084787A1 (en) 2022-03-17
JP2024133658A (ja) 2024-10-02
CN113228830A (zh) 2021-08-06
JP2023115076A (ja) 2023-08-18
CN113228830B (zh) 2024-10-01
CN119153304A (zh) 2024-12-17
JPWO2020145051A1 (ja) 2021-11-18
TWI849020B (zh) 2024-07-21
WO2020145051A1 (ja) 2020-07-16
TW202042598A (zh) 2020-11-16

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