CN113228830B - 等离子体处理装置及等离子体处理方法 - Google Patents

等离子体处理装置及等离子体处理方法 Download PDF

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Publication number
CN113228830B
CN113228830B CN201980087489.1A CN201980087489A CN113228830B CN 113228830 B CN113228830 B CN 113228830B CN 201980087489 A CN201980087489 A CN 201980087489A CN 113228830 B CN113228830 B CN 113228830B
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period
frequency power
frequency
plasma processing
lower electrode
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CN113228830A (zh
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舆水地盐
久保田绅治
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201980087489.1A 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法 Active CN113228830B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202411261847.5A CN119153304A (zh) 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019001662 2019-01-09
JP2019-001662 2019-01-09
JP2019018833 2019-02-05
JP2019-018833 2019-02-05
PCT/JP2019/049499 WO2020145051A1 (ja) 2019-01-09 2019-12-17 プラズマ処理装置及びプラズマ処理方法

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CN113228830A CN113228830A (zh) 2021-08-06
CN113228830B true CN113228830B (zh) 2024-10-01

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CN202411261847.5A Pending CN119153304A (zh) 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法

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US (1) US20220084787A1 (enExample)
JP (4) JP7297795B2 (enExample)
KR (1) KR20210111269A (enExample)
CN (2) CN113228830B (enExample)
SG (1) SG11202107162UA (enExample)
TW (2) TWI849020B (enExample)
WO (1) WO2020145051A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7297795B2 (ja) * 2019-01-09 2023-06-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
KR102827481B1 (ko) 2019-01-22 2025-06-30 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
JP7309799B2 (ja) * 2020-10-30 2023-07-18 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7737401B2 (ja) 2020-12-10 2025-09-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
TW202247235A (zh) * 2021-02-04 2022-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
WO2023189292A1 (ja) * 2022-03-31 2023-10-05 東京エレクトロン株式会社 プラズマ処理装置
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US20240055244A1 (en) * 2022-08-10 2024-02-15 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
JP2024094788A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電源装置
WO2025057636A1 (ja) * 2023-09-15 2025-03-20 東京エレクトロン株式会社 プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016152252A (ja) * 2015-02-16 2016-08-22 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
JP3700278B2 (ja) 1996-08-23 2005-09-28 ソニー株式会社 デュアルゲート構造を有する半導体装置の製造方法
DE19929278A1 (de) * 1998-06-26 2000-02-17 Nissin Electric Co Ltd Verfahren zum Implantieren negativer Wasserstoffionen und Implantierungseinrichtung
JP2920188B1 (ja) * 1998-06-26 1999-07-19 日新電機株式会社 パルスバイアス水素負イオン注入方法及び注入装置
JP4538209B2 (ja) * 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP5221403B2 (ja) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
JP5466480B2 (ja) * 2009-02-20 2014-04-09 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US8404598B2 (en) * 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
KR102025540B1 (ko) 2012-08-28 2019-09-26 에이이에스 글로벌 홀딩스 피티이 리미티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어； 고속 이온 에너지 스위칭； 이온 에너지 제어와 펄스동작 바이어스 서플라이； 및 가상 전면 패널
JP6224958B2 (ja) * 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2015053384A (ja) * 2013-09-06 2015-03-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5701958B2 (ja) * 2013-10-15 2015-04-15 東京エレクトロン株式会社 基板処理装置
WO2017126184A1 (ja) 2016-01-18 2017-07-27 株式会社 日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP6479698B2 (ja) * 2016-02-18 2019-03-06 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
JP6770868B2 (ja) * 2016-10-26 2020-10-21 東京エレクトロン株式会社 プラズマ処理装置のインピーダンス整合のための方法
JP6697372B2 (ja) * 2016-11-21 2020-05-20 キオクシア株式会社 ドライエッチング方法及び半導体装置の製造方法
US10927449B2 (en) * 2017-01-25 2021-02-23 Applied Materials, Inc. Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment
US10373804B2 (en) 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
US12230475B2 (en) * 2018-08-14 2025-02-18 Tokyo Electron Limited Systems and methods of control for plasma processing
JP7297795B2 (ja) * 2019-01-09 2023-06-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN116844934A (zh) * 2019-02-05 2023-10-03 东京毅力科创株式会社 等离子体处理装置
JP7262375B2 (ja) * 2019-11-26 2023-04-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016152252A (ja) * 2015-02-16 2016-08-22 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法

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Publication number Publication date
TW202431904A (zh) 2024-08-01
JP7297795B2 (ja) 2023-06-26
KR20210111269A (ko) 2021-09-10
JP2025166257A (ja) 2025-11-05
JP7734239B2 (ja) 2025-09-04
JP7519507B2 (ja) 2024-07-19
US20220084787A1 (en) 2022-03-17
JP2024133658A (ja) 2024-10-02
CN113228830A (zh) 2021-08-06
JP2023115076A (ja) 2023-08-18
CN119153304A (zh) 2024-12-17
JPWO2020145051A1 (ja) 2021-11-18
TWI849020B (zh) 2024-07-21
WO2020145051A1 (ja) 2020-07-16
SG11202107162UA (en) 2021-07-29
TW202042598A (zh) 2020-11-16

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