SG11202103988SA - Crystal growth apparatus - Google Patents

Crystal growth apparatus

Info

Publication number
SG11202103988SA
SG11202103988SA SG11202103988SA SG11202103988SA SG11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA SG 11202103988S A SG11202103988S A SG 11202103988SA
Authority
SG
Singapore
Prior art keywords
crystal growth
growth apparatus
crystal
growth
Prior art date
Application number
SG11202103988SA
Other languages
English (en)
Inventor
Robert Ebner
Ghassan Barbar
Chih-Yung Hsiung
Bernd Gruhn
Original Assignee
Ebner Ind Ofenbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebner Ind Ofenbau filed Critical Ebner Ind Ofenbau
Publication of SG11202103988SA publication Critical patent/SG11202103988SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
SG11202103988SA 2018-11-22 2019-11-19 Crystal growth apparatus SG11202103988SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018129492.1A DE102018129492B4 (de) 2018-11-22 2018-11-22 Vorrichtung und Verfahren zum Züchten von Kristallen
PCT/EP2019/081770 WO2020104444A1 (en) 2018-11-22 2019-11-19 Crystal growth apparatus

Publications (1)

Publication Number Publication Date
SG11202103988SA true SG11202103988SA (en) 2021-05-28

Family

ID=68654456

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202103988SA SG11202103988SA (en) 2018-11-22 2019-11-19 Crystal growth apparatus

Country Status (8)

Country Link
US (1) US20220010457A1 (zh)
EP (1) EP3884086A1 (zh)
JP (1) JP2022507882A (zh)
KR (1) KR20210093249A (zh)
CN (1) CN113166969A (zh)
DE (1) DE102018129492B4 (zh)
SG (1) SG11202103988SA (zh)
WO (1) WO2020104444A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT523729B1 (de) 2020-09-28 2021-11-15 Ebner Ind Ofenbau Vorrichtung zum Züchten von Kristallen mit einer thermischen Umhüllungseinheit

Family Cites Families (25)

* Cited by examiner, † Cited by third party
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US4556436A (en) * 1984-08-22 1985-12-03 The United States Of America As Represented By The Secretary Of The Navy Method of preparing single crystalline cubic silicon carbide layers
JPH0788274B2 (ja) * 1985-09-18 1995-09-27 三洋電機株式会社 ＳｉＣ単結晶の成長方法
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
JP3491402B2 (ja) * 1995-08-07 2004-01-26 株式会社デンソー 単結晶製造方法及びその単結晶製造装置
US6056820A (en) * 1998-07-10 2000-05-02 Northrop Grumman Corporation Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide
JP3762559B2 (ja) * 1999-01-28 2006-04-05 株式会社シクスオン 坩堝、結晶成長装置、および、結晶成長方法
US6406539B1 (en) * 1999-04-28 2002-06-18 Showa Denko K.K, Process for producing silicon carbide single crystal and production apparatus therefor
JP4597285B2 (ja) * 1999-04-28 2010-12-15 昭和電工株式会社 炭化珪素単結晶の製造方法及び製造装置
US6451112B1 (en) * 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
US8163086B2 (en) * 2007-08-29 2012-04-24 Cree, Inc. Halogen assisted physical vapor transport method for silicon carbide growth
JP5262203B2 (ja) * 2008-03-11 2013-08-14 住友電気工業株式会社 化合物半導体単結晶の製造装置および製造方法
JP5271601B2 (ja) * 2008-05-16 2013-08-21 株式会社ブリヂストン 単結晶の製造装置及び製造方法
DE102008063129B4 (de) * 2008-12-24 2013-05-16 Sicrystal Ag Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat
US8553333B2 (en) * 2009-01-23 2013-10-08 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Nanostructured anti-reflective coatings for substrates
CN201779995U (zh) * 2010-05-31 2011-03-30 比亚迪股份有限公司 一种用于还原气体气氛平衡的坩埚
CN102691100B (zh) * 2011-03-22 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 工艺腔室装置和具有该工艺腔室装置的外延设备
WO2012144872A2 (en) * 2011-04-21 2012-10-26 Lg Innotek Co., Ltd. Apparatus and method for fabricating ingot
JP5556761B2 (ja) * 2011-07-28 2014-07-23 株式会社デンソー 炭化珪素単結晶製造装置
KR20130074712A (ko) * 2011-12-26 2013-07-04 엘지이노텍 주식회사 잉곳 제조 장치
US8747982B2 (en) * 2011-12-28 2014-06-10 Sicrystal Aktiengesellschaft Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
TWI516648B (zh) * 2014-06-16 2016-01-11 台聚光電股份有限公司 使用多片晶種來生長碳化矽單晶之製造裝置
CN107924823B (zh) * 2015-09-29 2021-09-28 住友电气工业株式会社 制造碳化硅外延基板的方法、制造碳化硅半导体装置的方法以及制造碳化硅外延基板的设备
CN106480503B (zh) * 2016-12-09 2018-11-20 河北同光晶体有限公司 一种颗粒状碳化硅单晶的生长方法
CN206244927U (zh) * 2016-12-09 2017-06-13 河北同光晶体有限公司 一种生长不同晶体结构碳化硅单晶的装置

Also Published As

Publication number Publication date
DE102018129492A1 (de) 2020-05-28
DE102018129492B4 (de) 2022-04-28
CN113166969A (zh) 2021-07-23
WO2020104444A1 (en) 2020-05-28
US20220010457A1 (en) 2022-01-13
EP3884086A1 (en) 2021-09-29
JP2022507882A (ja) 2022-01-18
KR20210093249A (ko) 2021-07-27

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