SG11202103680RA - Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus - Google Patents

Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus

Info

Publication number
SG11202103680RA
SG11202103680RA SG11202103680RA SG11202103680RA SG11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA SG 11202103680R A SG11202103680R A SG 11202103680RA
Authority
SG
Singapore
Prior art keywords
melt
pulling
single crystal
semiconductor material
semiconductor
Prior art date
Application number
SG11202103680RA
Other languages
English (en)
Inventor
Alexander Molchanov
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11202103680RA publication Critical patent/SG11202103680RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SG11202103680RA 2018-10-12 2019-09-27 Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus SG11202103680RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018217509.8A DE102018217509A1 (de) 2018-10-12 2018-10-12 Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial nach der CZ-Methode aus einer Schmelze und Verfahren unter Verwendung der Vorrichtung
PCT/EP2019/076286 WO2020074285A1 (fr) 2018-10-12 2019-09-27 Dispositif de croissance par tirage d'un monocristal en matériau semi-conducteur selon le procédé czochralski à partir d'une matière en fusion, et procédé d'utilisation de ce dispositif

Publications (1)

Publication Number Publication Date
SG11202103680RA true SG11202103680RA (en) 2021-05-28

Family

ID=68084847

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202103680RA SG11202103680RA (en) 2018-10-12 2019-09-27 Apparatus for pulling a single crystal of semiconductor material by the cz method from a melt and method using the apparatus

Country Status (10)

Country Link
US (1) US11598020B2 (fr)
EP (1) EP3864198B1 (fr)
JP (1) JP7167329B2 (fr)
KR (1) KR102537117B1 (fr)
CN (1) CN112888812A (fr)
DE (1) DE102018217509A1 (fr)
FI (1) FI3864198T3 (fr)
SG (1) SG11202103680RA (fr)
TW (1) TWI735962B (fr)
WO (1) WO2020074285A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116324049A (zh) * 2020-10-07 2023-06-23 胜高股份有限公司 单晶的制造方法
EP4130348A1 (fr) 2021-08-02 2023-02-08 Siltronic AG Dispositif et procédé de fabrication de tige de silicium monocristallin
CN113882015A (zh) * 2021-09-29 2022-01-04 西安奕斯伟材料科技有限公司 氮掺杂剂加料装置、方法及氮掺杂单晶硅棒的制造系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442829A1 (de) * 1994-12-01 1996-06-05 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zur Herstellung eines Einkristalls
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
JP2001003978A (ja) 1999-06-21 2001-01-09 Bridgestone Corp 防振装置
JP3747696B2 (ja) * 1999-07-23 2006-02-22 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ装置の熱遮蔽部材
US6482263B1 (en) * 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
US7077905B2 (en) * 2002-09-13 2006-07-18 Toshiba Ceramics Co., Ltd. Apparatus for pulling a single crystal
JP4193500B2 (ja) * 2002-10-07 2008-12-10 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ装置及びその引上げ方法
JP4161804B2 (ja) 2003-05-30 2008-10-08 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ装置の熱遮蔽部材
JP4349493B2 (ja) * 2005-09-27 2009-10-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶シリコン引き上げ装置、シリコン融液の汚染防止方法及びシリコン融液の汚染防止装置
JP4829176B2 (ja) 2007-06-08 2011-12-07 シルトロニック・ジャパン株式会社 単結晶の製造方法
US8545623B2 (en) * 2009-06-18 2013-10-01 Sumco Phoenix Corporation Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
CN101838843A (zh) * 2010-06-02 2010-09-22 万关良 单晶炉用热屏以及具有其的单晶炉
JP6477356B2 (ja) 2015-08-21 2019-03-06 株式会社Sumco 単結晶の製造方法および製造装置
CN108166052A (zh) * 2018-02-13 2018-06-15 南京晶能半导体科技有限公司 一种石墨导流筒装置、锥形热场及单晶炉

Also Published As

Publication number Publication date
CN112888812A (zh) 2021-06-01
KR20210072073A (ko) 2021-06-16
EP3864198A1 (fr) 2021-08-18
TWI735962B (zh) 2021-08-11
JP7167329B2 (ja) 2022-11-08
FI3864198T3 (en) 2022-12-15
US20210340690A1 (en) 2021-11-04
EP3864198B1 (fr) 2022-09-07
US11598020B2 (en) 2023-03-07
KR102537117B1 (ko) 2023-05-26
TW202014563A (zh) 2020-04-16
JP2022504729A (ja) 2022-01-13
WO2020074285A1 (fr) 2020-04-16
DE102018217509A1 (de) 2020-04-16

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