SG11202010656QA - Novolak/dnq based, chemically amplified photoresist - Google Patents

Novolak/dnq based, chemically amplified photoresist

Info

Publication number
SG11202010656QA
SG11202010656QA SG11202010656QA SG11202010656QA SG11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA
Authority
SG
Singapore
Prior art keywords
dnq
novolak
chemically amplified
amplified photoresist
photoresist
Prior art date
Application number
SG11202010656QA
Other languages
English (en)
Inventor
Medhat A Toukhy
Weihong Liu
Takanori Kudo
Hung-Yang Chen
Jian Yin
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11202010656QA publication Critical patent/SG11202010656QA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14Polycondensates modified by chemical after-treatment
    • C08G59/1433Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1477Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C09D163/04Epoxynovolacs
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polyethers (AREA)
SG11202010656QA 2018-05-24 2019-05-22 Novolak/dnq based, chemically amplified photoresist SG11202010656QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862675939P 2018-05-24 2018-05-24
PCT/EP2019/063216 WO2019224248A1 (en) 2018-05-24 2019-05-22 Novolak/dnq based, chemically amplified photoresist

Publications (1)

Publication Number Publication Date
SG11202010656QA true SG11202010656QA (en) 2020-12-30

Family

ID=66668899

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010656QA SG11202010656QA (en) 2018-05-24 2019-05-22 Novolak/dnq based, chemically amplified photoresist

Country Status (7)

Country Link
US (1) US20210382390A1 (ja)
EP (1) EP3803510A1 (ja)
JP (1) JP7369146B2 (ja)
KR (1) KR102657855B1 (ja)
CN (1) CN112166378A (ja)
SG (1) SG11202010656QA (ja)
WO (1) WO2019224248A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202336531A (zh) 2021-11-17 2023-09-16 德商馬克專利公司 藉濕式化學蝕刻以改善金屬結構製造的組合物和方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3638068B2 (ja) * 1996-12-20 2005-04-13 富士写真フイルム株式会社 ポジ型感光性組成物
US5858605A (en) * 1997-03-08 1999-01-12 Shipley Company, L.L.C. Acid labile photoactive composition
JP2001337456A (ja) * 2000-05-25 2001-12-07 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JP3738420B2 (ja) * 2001-11-16 2006-01-25 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
KR20070019666A (ko) * 2003-10-31 2007-02-15 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 후막 및 초후막 대응 화학 증폭형 감광성 수지 조성물
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Azエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
JP4476680B2 (ja) 2004-04-20 2010-06-09 東京応化工業株式会社 インプランテーション工程用化学増幅型ポジ型ホトレジスト組成物
JP2010139561A (ja) * 2008-12-09 2010-06-24 Sumitomo Chemical Co Ltd ポジ型感光性組成物、並びにそれから形成される色フィルタアレイ、固体撮像素子及びカメラシステム
JP5387181B2 (ja) * 2009-07-08 2014-01-15 信越化学工業株式会社 スルホニウム塩、レジスト材料及びパターン形成方法
US8841062B2 (en) * 2012-12-04 2014-09-23 Az Electronic Materials (Luxembourg) S.A.R.L. Positive working photosensitive material
JP6059983B2 (ja) * 2012-12-28 2017-01-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜及びパターン形成方法、並びに、電子デバイスの製造方法
KR20150129676A (ko) * 2013-03-14 2015-11-20 디아이씨 가부시끼가이샤 변성 노볼락형 페놀 수지, 레지스트 재료, 도막 및 레지스트 영구막
JP5850289B2 (ja) * 2013-09-18 2016-02-03 Dic株式会社 変性ヒドロキシナフタレンノボラック樹脂、変性ヒドロキシナフタレンノボラック樹脂の製造方法、感光性組成物、レジスト材料及び塗膜
JP6267951B2 (ja) * 2013-12-18 2018-01-24 富士フイルム株式会社 感光性転写材料、パターン形成方法およびエッチング方法
JP6761657B2 (ja) 2015-03-31 2020-09-30 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
CN112166378A (zh) 2021-01-01
TW202004340A (zh) 2020-01-16
US20210382390A1 (en) 2021-12-09
JP2021524604A (ja) 2021-09-13
JP7369146B2 (ja) 2023-10-25
WO2019224248A1 (en) 2019-11-28
EP3803510A1 (en) 2021-04-14
KR102657855B1 (ko) 2024-04-15
KR20210013178A (ko) 2021-02-03

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