SG11202010656QA - Novolak/dnq based, chemically amplified photoresist - Google Patents
Novolak/dnq based, chemically amplified photoresistInfo
- Publication number
- SG11202010656QA SG11202010656QA SG11202010656QA SG11202010656QA SG11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA
- Authority
- SG
- Singapore
- Prior art keywords
- dnq
- novolak
- chemically amplified
- amplified photoresist
- photoresist
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
- C08G59/1477—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
- C09D163/04—Epoxynovolacs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials For Photolithography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Polyethers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862675939P | 2018-05-24 | 2018-05-24 | |
PCT/EP2019/063216 WO2019224248A1 (en) | 2018-05-24 | 2019-05-22 | Novolak/dnq based, chemically amplified photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202010656QA true SG11202010656QA (en) | 2020-12-30 |
Family
ID=66668899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202010656QA SG11202010656QA (en) | 2018-05-24 | 2019-05-22 | Novolak/dnq based, chemically amplified photoresist |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210382390A1 (ja) |
EP (1) | EP3803510A1 (ja) |
JP (1) | JP7369146B2 (ja) |
KR (1) | KR102657855B1 (ja) |
CN (1) | CN112166378A (ja) |
SG (1) | SG11202010656QA (ja) |
WO (1) | WO2019224248A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202336531A (zh) | 2021-11-17 | 2023-09-16 | 德商馬克專利公司 | 藉濕式化學蝕刻以改善金屬結構製造的組合物和方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5942367A (en) * | 1996-04-24 | 1999-08-24 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group |
JP3638068B2 (ja) * | 1996-12-20 | 2005-04-13 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US5858605A (en) * | 1997-03-08 | 1999-01-12 | Shipley Company, L.L.C. | Acid labile photoactive composition |
JP2001337456A (ja) * | 2000-05-25 | 2001-12-07 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
JP3738420B2 (ja) * | 2001-11-16 | 2006-01-25 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法 |
KR20070019666A (ko) * | 2003-10-31 | 2007-02-15 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 후막 및 초후막 대응 화학 증폭형 감광성 수지 조성물 |
JP4440600B2 (ja) * | 2003-10-31 | 2010-03-24 | Azエレクトロニックマテリアルズ株式会社 | 厚膜および超厚膜対応化学増幅型感光性樹脂組成物 |
JP4476680B2 (ja) | 2004-04-20 | 2010-06-09 | 東京応化工業株式会社 | インプランテーション工程用化学増幅型ポジ型ホトレジスト組成物 |
JP2010139561A (ja) * | 2008-12-09 | 2010-06-24 | Sumitomo Chemical Co Ltd | ポジ型感光性組成物、並びにそれから形成される色フィルタアレイ、固体撮像素子及びカメラシステム |
JP5387181B2 (ja) * | 2009-07-08 | 2014-01-15 | 信越化学工業株式会社 | スルホニウム塩、レジスト材料及びパターン形成方法 |
US8841062B2 (en) * | 2012-12-04 | 2014-09-23 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive working photosensitive material |
JP6059983B2 (ja) * | 2012-12-28 | 2017-01-11 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜及びパターン形成方法、並びに、電子デバイスの製造方法 |
KR20150129676A (ko) * | 2013-03-14 | 2015-11-20 | 디아이씨 가부시끼가이샤 | 변성 노볼락형 페놀 수지, 레지스트 재료, 도막 및 레지스트 영구막 |
JP5850289B2 (ja) * | 2013-09-18 | 2016-02-03 | Dic株式会社 | 変性ヒドロキシナフタレンノボラック樹脂、変性ヒドロキシナフタレンノボラック樹脂の製造方法、感光性組成物、レジスト材料及び塗膜 |
JP6267951B2 (ja) * | 2013-12-18 | 2018-01-24 | 富士フイルム株式会社 | 感光性転写材料、パターン形成方法およびエッチング方法 |
JP6761657B2 (ja) | 2015-03-31 | 2020-09-30 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
-
2019
- 2019-05-22 US US17/056,773 patent/US20210382390A1/en active Pending
- 2019-05-22 EP EP19726946.7A patent/EP3803510A1/en active Pending
- 2019-05-22 KR KR1020207037053A patent/KR102657855B1/ko active IP Right Grant
- 2019-05-22 CN CN201980034950.7A patent/CN112166378A/zh active Pending
- 2019-05-22 SG SG11202010656QA patent/SG11202010656QA/en unknown
- 2019-05-22 WO PCT/EP2019/063216 patent/WO2019224248A1/en unknown
- 2019-05-22 JP JP2020565302A patent/JP7369146B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN112166378A (zh) | 2021-01-01 |
TW202004340A (zh) | 2020-01-16 |
US20210382390A1 (en) | 2021-12-09 |
JP2021524604A (ja) | 2021-09-13 |
JP7369146B2 (ja) | 2023-10-25 |
WO2019224248A1 (en) | 2019-11-28 |
EP3803510A1 (en) | 2021-04-14 |
KR102657855B1 (ko) | 2024-04-15 |
KR20210013178A (ko) | 2021-02-03 |
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