SG11202010656QA - Novolak/dnq based, chemically amplified photoresist - Google Patents

Novolak/dnq based, chemically amplified photoresist

Info

Publication number
SG11202010656QA
SG11202010656QA SG11202010656QA SG11202010656QA SG11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA SG 11202010656Q A SG11202010656Q A SG 11202010656QA
Authority
SG
Singapore
Prior art keywords
dnq
novolak
chemically amplified
amplified photoresist
photoresist
Prior art date
Application number
SG11202010656QA
Inventor
Medhat A Toukhy
Weihong Liu
Takanori Kudo
Hung-Yang Chen
Jian Yin
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11202010656QA publication Critical patent/SG11202010656QA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14Polycondensates modified by chemical after-treatment
    • C08G59/1433Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1477Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C09D163/04Epoxynovolacs
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Polyethers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG11202010656QA 2018-05-24 2019-05-22 Novolak/dnq based, chemically amplified photoresist SG11202010656QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862675939P 2018-05-24 2018-05-24
PCT/EP2019/063216 WO2019224248A1 (en) 2018-05-24 2019-05-22 Novolak/dnq based, chemically amplified photoresist

Publications (1)

Publication Number Publication Date
SG11202010656QA true SG11202010656QA (en) 2020-12-30

Family

ID=66668899

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010656QA SG11202010656QA (en) 2018-05-24 2019-05-22 Novolak/dnq based, chemically amplified photoresist

Country Status (7)

Country Link
US (1) US20210382390A1 (en)
EP (1) EP3803510A1 (en)
JP (1) JP7369146B2 (en)
KR (1) KR102657855B1 (en)
CN (1) CN112166378A (en)
SG (1) SG11202010656QA (en)
WO (1) WO2019224248A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202336531A (en) 2021-11-17 2023-09-16 德商馬克專利公司 Compositions and methods for improving metal structure fabrication by wet chemical etch

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3638068B2 (en) * 1996-12-20 2005-04-13 富士写真フイルム株式会社 Positive photosensitive composition
US5858605A (en) * 1997-03-08 1999-01-12 Shipley Company, L.L.C. Acid labile photoactive composition
JP2001337456A (en) * 2000-05-25 2001-12-07 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition
JP3738420B2 (en) * 2001-11-16 2006-01-25 東京応化工業株式会社 Positive photoresist composition and method for forming thin-film resist pattern for inclined implantation process
KR20070019666A (en) * 2003-10-31 2007-02-15 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 Thick film or ultrathick film responsive chemical amplification type photosensitive resin composition
JP4440600B2 (en) * 2003-10-31 2010-03-24 Azエレクトロニックマテリアルズ株式会社 Chemically amplified photosensitive resin composition for thick and ultra-thick films
JP4476680B2 (en) 2004-04-20 2010-06-09 東京応化工業株式会社 Chemically amplified positive photoresist composition for implantation process
JP2010139561A (en) * 2008-12-09 2010-06-24 Sumitomo Chemical Co Ltd Positive photosensitive composition and color filter array formed with the positive photosensitive composition, solid imaging element, and camera system
JP5387181B2 (en) * 2009-07-08 2014-01-15 信越化学工業株式会社 Sulfonium salt, resist material and pattern forming method
US8841062B2 (en) * 2012-12-04 2014-09-23 Az Electronic Materials (Luxembourg) S.A.R.L. Positive working photosensitive material
JP6059983B2 (en) * 2012-12-28 2017-01-11 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method using the composition, and electronic device manufacturing method
KR20150129676A (en) * 2013-03-14 2015-11-20 디아이씨 가부시끼가이샤 modified phenolic novolac resin, resist material, coating film, and permanent resist film
JP5850289B2 (en) * 2013-09-18 2016-02-03 Dic株式会社 Modified hydroxy naphthalene novolak resin, method for producing modified hydroxy naphthalene novolak resin, photosensitive composition, resist material and coating film
JP6267951B2 (en) * 2013-12-18 2018-01-24 富士フイルム株式会社 Photosensitive transfer material, pattern forming method and etching method
JP6761657B2 (en) 2015-03-31 2020-09-30 住友化学株式会社 Method for manufacturing resist composition and resist pattern

Also Published As

Publication number Publication date
CN112166378A (en) 2021-01-01
TW202004340A (en) 2020-01-16
US20210382390A1 (en) 2021-12-09
JP2021524604A (en) 2021-09-13
JP7369146B2 (en) 2023-10-25
WO2019224248A1 (en) 2019-11-28
EP3803510A1 (en) 2021-04-14
KR102657855B1 (en) 2024-04-15
KR20210013178A (en) 2021-02-03

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