SG11202010093QA - Substrate deformation detection and correction - Google Patents

Substrate deformation detection and correction

Info

Publication number
SG11202010093QA
SG11202010093QA SG11202010093QA SG11202010093QA SG11202010093QA SG 11202010093Q A SG11202010093Q A SG 11202010093QA SG 11202010093Q A SG11202010093Q A SG 11202010093QA SG 11202010093Q A SG11202010093Q A SG 11202010093QA SG 11202010093Q A SG11202010093Q A SG 11202010093QA
Authority
SG
Singapore
Prior art keywords
correction
deformation detection
substrate deformation
substrate
detection
Prior art date
Application number
SG11202010093QA
Other languages
English (en)
Inventor
Milind Gadre
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202010093QA publication Critical patent/SG11202010093QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG11202010093QA 2018-05-07 2019-04-05 Substrate deformation detection and correction SG11202010093QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862668175P 2018-05-07 2018-05-07
PCT/US2019/026155 WO2019217015A1 (en) 2018-05-07 2019-04-05 Substrate deformation detection and correction

Publications (1)

Publication Number Publication Date
SG11202010093QA true SG11202010093QA (en) 2020-11-27

Family

ID=68385479

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202010093QA SG11202010093QA (en) 2018-05-07 2019-04-05 Substrate deformation detection and correction

Country Status (7)

Country Link
US (2) US10804125B2 (zh)
JP (1) JP7364597B2 (zh)
KR (1) KR20200141525A (zh)
CN (1) CN112106179A (zh)
SG (1) SG11202010093QA (zh)
TW (1) TWI710038B (zh)
WO (1) WO2019217015A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228347A (ja) 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US6455437B1 (en) * 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process
US6996472B2 (en) * 2000-10-10 2006-02-07 The United States Of America As Represented By The Department Of Health And Human Services Drift compensation method for fingerprint spectra
CN102089873A (zh) * 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
JP4575984B2 (ja) 2009-02-12 2010-11-04 三井造船株式会社 原子層成長装置および薄膜形成方法
JP5597695B2 (ja) 2010-03-26 2014-10-01 株式会社アルバック 基板保持装置及び基板保持方法
JP2013046047A (ja) 2011-08-26 2013-03-04 Toshiba Corp 加熱装置および半導体装置の製造方法
US10726231B2 (en) * 2012-11-28 2020-07-28 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10497747B2 (en) * 2012-11-28 2019-12-03 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10266802B2 (en) * 2013-01-16 2019-04-23 Orteron (T.O) Ltd. Method for controlling biological processes in microorganisms
AU2014214709B2 (en) * 2013-02-08 2018-05-31 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Biomolecular processing platform and uses thereof
US9245768B2 (en) * 2013-12-17 2016-01-26 Applied Materials, Inc. Method of improving substrate uniformity during rapid thermal processing
WO2015195272A1 (en) * 2014-06-20 2015-12-23 Applied Materials, Inc. Methods for reducing semiconductor substrate strain variation
US20160329206A1 (en) * 2015-05-08 2016-11-10 Lam Research Corporation Methods of modulating residual stress in thin films
US20160355947A1 (en) * 2015-06-05 2016-12-08 Sensor Electronic Technology, Inc. Susceptor Heating For Epitaxial Growth Process
KR20170016681A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 레지스트레이션 제어된 포토마스크의 결함 검출 방법
GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
JP6690488B2 (ja) 2016-09-29 2020-04-28 株式会社リコー 情報処理システム、閲覧制御方法、情報処理装置及びプログラム
JP7085824B2 (ja) 2017-11-28 2022-06-17 東京エレクトロン株式会社 成膜方法

Also Published As

Publication number Publication date
US20190341285A1 (en) 2019-11-07
CN112106179A (zh) 2020-12-18
JP2021523565A (ja) 2021-09-02
TW201947681A (zh) 2019-12-16
JP7364597B2 (ja) 2023-10-18
US10804125B2 (en) 2020-10-13
KR20200141525A (ko) 2020-12-18
WO2019217015A1 (en) 2019-11-14
US20200357672A1 (en) 2020-11-12
TWI710038B (zh) 2020-11-11
US11417553B2 (en) 2022-08-16

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