SG11202009528QA - Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium material - Google Patents
Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium materialInfo
- Publication number
- SG11202009528QA SG11202009528QA SG11202009528QA SG11202009528QA SG11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA SG 11202009528Q A SG11202009528Q A SG 11202009528QA
- Authority
- SG
- Singapore
- Prior art keywords
- diamond
- monocrystalline layer
- iridium material
- epitaxically
- growing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1800255A FR3079535B1 (fr) | 2018-03-28 | 2018-03-28 | Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium |
PCT/IB2019/000196 WO2019186262A1 (fr) | 2018-03-28 | 2019-03-26 | Procédé de fabrication d'une couche monocristalline de matériau diamant ou iridium et substrat pour croissance par épitaxie d'une couche monocristalline de matériau diamant ou iridium |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202009528QA true SG11202009528QA (en) | 2020-10-29 |
Family
ID=63079954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202009528QA SG11202009528QA (en) | 2018-03-28 | 2019-03-26 | Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium material |
Country Status (8)
Country | Link |
---|---|
US (1) | US11935743B2 (zh) |
EP (1) | EP3775329A1 (zh) |
JP (1) | JP7408893B2 (zh) |
KR (1) | KR102654904B1 (zh) |
CN (1) | CN111936676A (zh) |
FR (1) | FR3079535B1 (zh) |
SG (1) | SG11202009528QA (zh) |
WO (1) | WO2019186262A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3079531B1 (fr) * | 2018-03-28 | 2022-03-18 | Soitec Silicon On Insulator | Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt |
CN113373512B (zh) * | 2021-05-24 | 2022-02-11 | 北京科技大学 | 基于铱-石墨烯结构化缓冲层的单晶金刚石外延生长方法 |
CN113832541B (zh) * | 2021-09-29 | 2024-02-09 | 太原理工大学 | 用于外延生长大尺寸单晶金刚石的复合衬底的制备方法 |
JP2023116122A (ja) * | 2022-02-09 | 2023-08-22 | 信越化学工業株式会社 | 下地基板及び単結晶ダイヤモンド積層基板並びにそれらの製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124125A (ja) | 2000-10-17 | 2002-04-26 | Masaru Hiyamizu | 照明器具つき屏風と衝立 |
US8507361B2 (en) | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US6562127B1 (en) * | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
JP4016102B2 (ja) * | 2003-01-17 | 2007-12-05 | 独立行政法人産業技術総合研究所 | パルスレーザ蒸着によるダイアモンドの結晶薄膜の作製方法及び同方法で作製した薄膜 |
DE10320133B4 (de) | 2003-05-06 | 2011-02-10 | Universität Augsburg | Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht |
JP5468528B2 (ja) | 2010-06-28 | 2014-04-09 | 信越化学工業株式会社 | 単結晶ダイヤモンド成長用基材及びその製造方法並びに単結晶ダイヤモンド基板の製造方法 |
US9064789B2 (en) * | 2013-08-12 | 2015-06-23 | International Business Machines Corporation | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates |
JP6822146B2 (ja) | 2015-01-16 | 2021-01-27 | 住友電気工業株式会社 | 半導体基板の製造方法及び複合半導体基板の製造方法 |
JP7017299B2 (ja) * | 2015-07-30 | 2022-02-08 | 信越化学工業株式会社 | ダイヤモンド電子素子及びダイヤモンド電子素子の製造方法 |
CN107268076A (zh) | 2017-07-28 | 2017-10-20 | 西安交通大学 | 一种基于异质外延生长单晶金刚石的方法 |
-
2018
- 2018-03-28 FR FR1800255A patent/FR3079535B1/fr active Active
-
2019
- 2019-03-26 SG SG11202009528QA patent/SG11202009528QA/en unknown
- 2019-03-26 WO PCT/IB2019/000196 patent/WO2019186262A1/fr unknown
- 2019-03-26 JP JP2020549793A patent/JP7408893B2/ja active Active
- 2019-03-26 US US17/042,728 patent/US11935743B2/en active Active
- 2019-03-26 CN CN201980021528.8A patent/CN111936676A/zh active Pending
- 2019-03-26 EP EP19721378.8A patent/EP3775329A1/fr active Pending
- 2019-03-26 KR KR1020207030291A patent/KR102654904B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR3079535A1 (fr) | 2019-10-04 |
US20210020434A1 (en) | 2021-01-21 |
JP2021518322A (ja) | 2021-08-02 |
FR3079535B1 (fr) | 2022-03-18 |
KR102654904B1 (ko) | 2024-04-04 |
KR20200136437A (ko) | 2020-12-07 |
WO2019186262A1 (fr) | 2019-10-03 |
CN111936676A (zh) | 2020-11-13 |
EP3775329A1 (fr) | 2021-02-17 |
JP7408893B2 (ja) | 2024-01-09 |
US11935743B2 (en) | 2024-03-19 |
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