SG11202009473XA - Substrate processing gas, storage container, and substrate processing method - Google Patents

Substrate processing gas, storage container, and substrate processing method

Info

Publication number
SG11202009473XA
SG11202009473XA SG11202009473XA SG11202009473XA SG11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA
Authority
SG
Singapore
Prior art keywords
substrate processing
storage container
processing method
processing gas
gas
Prior art date
Application number
SG11202009473XA
Other languages
English (en)
Inventor
Akifumi Yao
Yuuta TAKEDA
Jun Eto
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of SG11202009473XA publication Critical patent/SG11202009473XA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/24Inter-halogen compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
SG11202009473XA 2018-03-29 2019-03-05 Substrate processing gas, storage container, and substrate processing method SG11202009473XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018065433 2018-03-29
PCT/JP2019/008548 WO2019188030A1 (ja) 2018-03-29 2019-03-05 基板処理用ガス、保管容器および基板処理方法

Publications (1)

Publication Number Publication Date
SG11202009473XA true SG11202009473XA (en) 2020-10-29

Family

ID=68058815

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009473XA SG11202009473XA (en) 2018-03-29 2019-03-05 Substrate processing gas, storage container, and substrate processing method

Country Status (6)

Country Link
US (1) US11447697B2 (zh)
JP (1) JP7185148B2 (zh)
CN (1) CN111886674B (zh)
SG (1) SG11202009473XA (zh)
TW (1) TWI683791B (zh)
WO (1) WO2019188030A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116425118A (zh) * 2023-03-31 2023-07-14 南大光电(淄博)有限公司 裂解三氟化氮生产高纯氟气的方法及其裂解反应器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207570B1 (en) * 1999-08-20 2001-03-27 Lucent Technologies, Inc. Method of manufacturing integrated circuit devices
JP4369891B2 (ja) 2005-03-25 2009-11-25 独立行政法人 日本原子力研究開発機構 フッ素循環方式による七フッ化ヨウ素の製造方法
GB2464846B (en) * 2007-06-15 2012-04-11 Shell Int Research Method and system for adjusting the operation of a piece of equipment
JP4693823B2 (ja) 2007-06-18 2011-06-01 セントラル硝子株式会社 七フッ化ヨウ素の製造法
JP6056136B2 (ja) * 2011-09-07 2017-01-11 セントラル硝子株式会社 ドライエッチング方法
JP6032033B2 (ja) 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
CN105981135A (zh) * 2014-03-26 2016-09-28 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质
JP6210039B2 (ja) * 2014-09-24 2017-10-11 セントラル硝子株式会社 付着物の除去方法及びドライエッチング方法
US9728422B2 (en) * 2015-01-23 2017-08-08 Central Glass Company, Limited Dry etching method
JP6544215B2 (ja) 2015-01-23 2019-07-17 セントラル硝子株式会社 ドライエッチング方法
WO2016157317A1 (ja) 2015-03-27 2016-10-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
WO2017026001A1 (ja) 2015-08-07 2017-02-16 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
JP6792158B2 (ja) * 2016-02-09 2020-11-25 セントラル硝子株式会社 フッ素化合物ガスの精製方法
TWI588297B (zh) * 2016-03-21 2017-06-21 Central Glass Co Ltd Attachment removal method and dry etching method
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法

Also Published As

Publication number Publication date
KR20200136944A (ko) 2020-12-08
TWI683791B (zh) 2020-02-01
US11447697B2 (en) 2022-09-20
WO2019188030A1 (ja) 2019-10-03
US20210054275A1 (en) 2021-02-25
JP7185148B2 (ja) 2022-12-07
JPWO2019188030A1 (ja) 2021-04-01
TW201942046A (zh) 2019-11-01
CN111886674B (zh) 2024-03-12
CN111886674A (zh) 2020-11-03

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