SG11202009473XA - Substrate processing gas, storage container, and substrate processing method - Google Patents
Substrate processing gas, storage container, and substrate processing methodInfo
- Publication number
- SG11202009473XA SG11202009473XA SG11202009473XA SG11202009473XA SG11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate processing
- storage container
- processing method
- processing gas
- gas
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/24—Inter-halogen compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018065433 | 2018-03-29 | ||
PCT/JP2019/008548 WO2019188030A1 (ja) | 2018-03-29 | 2019-03-05 | 基板処理用ガス、保管容器および基板処理方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202009473XA true SG11202009473XA (en) | 2020-10-29 |
Family
ID=68058815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202009473XA SG11202009473XA (en) | 2018-03-29 | 2019-03-05 | Substrate processing gas, storage container, and substrate processing method |
Country Status (6)
Country | Link |
---|---|
US (1) | US11447697B2 (zh) |
JP (1) | JP7185148B2 (zh) |
CN (1) | CN111886674B (zh) |
SG (1) | SG11202009473XA (zh) |
TW (1) | TWI683791B (zh) |
WO (1) | WO2019188030A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116425118A (zh) * | 2023-03-31 | 2023-07-14 | 南大光电(淄博)有限公司 | 裂解三氟化氮生产高纯氟气的方法及其裂解反应器 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207570B1 (en) * | 1999-08-20 | 2001-03-27 | Lucent Technologies, Inc. | Method of manufacturing integrated circuit devices |
JP4369891B2 (ja) | 2005-03-25 | 2009-11-25 | 独立行政法人 日本原子力研究開発機構 | フッ素循環方式による七フッ化ヨウ素の製造方法 |
GB2464846B (en) * | 2007-06-15 | 2012-04-11 | Shell Int Research | Method and system for adjusting the operation of a piece of equipment |
JP4693823B2 (ja) | 2007-06-18 | 2011-06-01 | セントラル硝子株式会社 | 七フッ化ヨウ素の製造法 |
JP6056136B2 (ja) * | 2011-09-07 | 2017-01-11 | セントラル硝子株式会社 | ドライエッチング方法 |
JP6032033B2 (ja) | 2013-02-01 | 2016-11-24 | セントラル硝子株式会社 | シリコンのドライエッチング方法 |
CN105981135A (zh) * | 2014-03-26 | 2016-09-28 | 株式会社日立国际电气 | 衬底处理装置、半导体器件的制造方法及记录介质 |
JP6210039B2 (ja) * | 2014-09-24 | 2017-10-11 | セントラル硝子株式会社 | 付着物の除去方法及びドライエッチング方法 |
US9728422B2 (en) * | 2015-01-23 | 2017-08-08 | Central Glass Company, Limited | Dry etching method |
JP6544215B2 (ja) | 2015-01-23 | 2019-07-17 | セントラル硝子株式会社 | ドライエッチング方法 |
WO2016157317A1 (ja) | 2015-03-27 | 2016-10-06 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
WO2017026001A1 (ja) | 2015-08-07 | 2017-02-16 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
JP6792158B2 (ja) * | 2016-02-09 | 2020-11-25 | セントラル硝子株式会社 | フッ素化合物ガスの精製方法 |
TWI588297B (zh) * | 2016-03-21 | 2017-06-21 | Central Glass Co Ltd | Attachment removal method and dry etching method |
JP7053991B2 (ja) * | 2017-03-28 | 2022-04-13 | セントラル硝子株式会社 | ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法 |
-
2019
- 2019-03-05 WO PCT/JP2019/008548 patent/WO2019188030A1/ja active Application Filing
- 2019-03-05 CN CN201980020982.1A patent/CN111886674B/zh active Active
- 2019-03-05 US US17/040,803 patent/US11447697B2/en active Active
- 2019-03-05 JP JP2020509759A patent/JP7185148B2/ja active Active
- 2019-03-05 SG SG11202009473XA patent/SG11202009473XA/en unknown
- 2019-03-20 TW TW108109499A patent/TWI683791B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20200136944A (ko) | 2020-12-08 |
TWI683791B (zh) | 2020-02-01 |
US11447697B2 (en) | 2022-09-20 |
WO2019188030A1 (ja) | 2019-10-03 |
US20210054275A1 (en) | 2021-02-25 |
JP7185148B2 (ja) | 2022-12-07 |
JPWO2019188030A1 (ja) | 2021-04-01 |
TW201942046A (zh) | 2019-11-01 |
CN111886674B (zh) | 2024-03-12 |
CN111886674A (zh) | 2020-11-03 |
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