SG11202007989TA - Process for producing semiconductor wafers - Google Patents
Process for producing semiconductor wafersInfo
- Publication number
- SG11202007989TA SG11202007989TA SG11202007989TA SG11202007989TA SG11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafers
- producing semiconductor
- producing
- wafers
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018203945.3A DE102018203945B4 (en) | 2018-03-15 | 2018-03-15 | Process for the manufacture of semiconductor wafers |
PCT/EP2019/056220 WO2019175207A1 (en) | 2018-03-15 | 2019-03-13 | Method for producing semiconductor wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202007989TA true SG11202007989TA (en) | 2020-09-29 |
Family
ID=65802075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202007989TA SG11202007989TA (en) | 2018-03-15 | 2019-03-13 | Process for producing semiconductor wafers |
Country Status (8)
Country | Link |
---|---|
US (1) | US11972986B2 (en) |
JP (1) | JP7062078B2 (en) |
KR (2) | KR20200131285A (en) |
CN (1) | CN111868898A (en) |
DE (1) | DE102018203945B4 (en) |
SG (1) | SG11202007989TA (en) |
TW (1) | TWI709176B (en) |
WO (1) | WO2019175207A1 (en) |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3011982B2 (en) | 1990-09-14 | 2000-02-21 | コマツ電子金属株式会社 | Method for manufacturing semiconductor device |
JP3731417B2 (en) * | 1999-11-26 | 2006-01-05 | 株式会社Sumco | Method for producing silicon wafer free of agglomerates of point defects |
US6663708B1 (en) * | 2000-09-22 | 2003-12-16 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and manufacturing method and heat treatment method of the same |
JP4537643B2 (en) | 2002-01-24 | 2010-09-01 | 信越半導体株式会社 | Manufacturing method of silicon single crystal wafer |
US6843201B2 (en) * | 2002-05-08 | 2005-01-18 | Asm International Nv | Temperature control for single substrate semiconductor processing reactor |
JP3933010B2 (en) * | 2002-08-23 | 2007-06-20 | 株式会社Sumco | Method for measuring point defect distribution of silicon single crystal ingot |
KR100531552B1 (en) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | Silicon wafer and method of fabricating the same |
US20080090309A1 (en) | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US8658945B2 (en) | 2004-02-27 | 2014-02-25 | Applied Materials, Inc. | Backside rapid thermal processing of patterned wafers |
US20060035477A1 (en) | 2004-08-12 | 2006-02-16 | Karen Mai | Methods and systems for rapid thermal processing |
US7700376B2 (en) * | 2005-04-06 | 2010-04-20 | Applied Materials, Inc. | Edge temperature compensation in thermal processing particularly useful for SOI wafers |
JP2007095889A (en) * | 2005-09-28 | 2007-04-12 | Ushio Inc | Light irradiation heating method |
US7598150B2 (en) * | 2006-11-20 | 2009-10-06 | Applied Materials, Inc. | Compensation techniques for substrate heating processes |
KR100901823B1 (en) * | 2007-08-17 | 2009-06-09 | 주식회사 실트론 | Method of testing defect of silicon wafer |
WO2009135137A2 (en) | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | System for non radial temperature control for rotating substrates |
JP5470769B2 (en) | 2008-07-29 | 2014-04-16 | 株式会社Sumco | Heat treatment method for silicon wafer |
JP5407473B2 (en) * | 2009-03-25 | 2014-02-05 | 株式会社Sumco | Silicon wafer manufacturing method |
US20120001301A1 (en) | 2009-04-13 | 2012-01-05 | Shin-Etsu Handotai Co., Ltd. | Annealed wafer, method for producing annealed wafer and method for fabricating device |
US8548312B2 (en) | 2010-02-19 | 2013-10-01 | Applied Materials, Inc. | High efficiency high accuracy heater driver |
JP6090752B2 (en) * | 2013-10-04 | 2017-03-08 | グローバルウェーハズ・ジャパン株式会社 | Silicon wafer evaluation method |
JP5976030B2 (en) * | 2014-04-11 | 2016-08-23 | グローバルウェーハズ・ジャパン株式会社 | Heat treatment method for silicon wafer |
WO2016019051A1 (en) | 2014-07-31 | 2016-02-04 | Sunedison Semiconductor Limited | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size |
JP6044660B2 (en) | 2015-02-19 | 2016-12-14 | 信越半導体株式会社 | Silicon wafer manufacturing method |
CN106757357B (en) * | 2017-01-10 | 2019-04-09 | 山东天岳先进材料科技有限公司 | A kind of preparation method of high-purity semi-insulating silicon carbide substrate |
-
2018
- 2018-03-15 DE DE102018203945.3A patent/DE102018203945B4/en active Active
-
2019
- 2019-03-08 TW TW108107741A patent/TWI709176B/en active
- 2019-03-13 US US16/981,048 patent/US11972986B2/en active Active
- 2019-03-13 SG SG11202007989TA patent/SG11202007989TA/en unknown
- 2019-03-13 JP JP2020548987A patent/JP7062078B2/en active Active
- 2019-03-13 CN CN201980019316.6A patent/CN111868898A/en active Pending
- 2019-03-13 KR KR1020207029204A patent/KR20200131285A/en active Application Filing
- 2019-03-13 WO PCT/EP2019/056220 patent/WO2019175207A1/en active Application Filing
- 2019-03-13 KR KR1020227033420A patent/KR102611774B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN111868898A (en) | 2020-10-30 |
DE102018203945A1 (en) | 2019-09-19 |
TW201939614A (en) | 2019-10-01 |
DE102018203945B4 (en) | 2023-08-10 |
JP7062078B2 (en) | 2022-05-02 |
KR20200131285A (en) | 2020-11-23 |
US11972986B2 (en) | 2024-04-30 |
KR102611774B1 (en) | 2023-12-07 |
KR20220137152A (en) | 2022-10-11 |
JP2021516866A (en) | 2021-07-08 |
TWI709176B (en) | 2020-11-01 |
US20210111080A1 (en) | 2021-04-15 |
WO2019175207A1 (en) | 2019-09-19 |
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