SG11202007989TA - Process for producing semiconductor wafers - Google Patents

Process for producing semiconductor wafers

Info

Publication number
SG11202007989TA
SG11202007989TA SG11202007989TA SG11202007989TA SG11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA SG 11202007989T A SG11202007989T A SG 11202007989TA
Authority
SG
Singapore
Prior art keywords
semiconductor wafers
producing semiconductor
producing
wafers
semiconductor
Prior art date
Application number
SG11202007989TA
Inventor
Christina Krügler
Michael Boy
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11202007989TA publication Critical patent/SG11202007989TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08Etching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67288Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11202007989TA 2018-03-15 2019-03-13 Process for producing semiconductor wafers SG11202007989TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018203945.3A DE102018203945B4 (en) 2018-03-15 2018-03-15 Process for the manufacture of semiconductor wafers
PCT/EP2019/056220 WO2019175207A1 (en) 2018-03-15 2019-03-13 Method for producing semiconductor wafers

Publications (1)

Publication Number Publication Date
SG11202007989TA true SG11202007989TA (en) 2020-09-29

Family

ID=65802075

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202007989TA SG11202007989TA (en) 2018-03-15 2019-03-13 Process for producing semiconductor wafers

Country Status (8)

Country Link
US (1) US11972986B2 (en)
JP (1) JP7062078B2 (en)
KR (2) KR20200131285A (en)
CN (1) CN111868898A (en)
DE (1) DE102018203945B4 (en)
SG (1) SG11202007989TA (en)
TW (1) TWI709176B (en)
WO (1) WO2019175207A1 (en)

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3011982B2 (en) 1990-09-14 2000-02-21 コマツ電子金属株式会社 Method for manufacturing semiconductor device
JP3731417B2 (en) * 1999-11-26 2006-01-05 株式会社Sumco Method for producing silicon wafer free of agglomerates of point defects
US6663708B1 (en) * 2000-09-22 2003-12-16 Mitsubishi Materials Silicon Corporation Silicon wafer, and manufacturing method and heat treatment method of the same
JP4537643B2 (en) 2002-01-24 2010-09-01 信越半導体株式会社 Manufacturing method of silicon single crystal wafer
US6843201B2 (en) * 2002-05-08 2005-01-18 Asm International Nv Temperature control for single substrate semiconductor processing reactor
JP3933010B2 (en) * 2002-08-23 2007-06-20 株式会社Sumco Method for measuring point defect distribution of silicon single crystal ingot
KR100531552B1 (en) * 2003-09-05 2005-11-28 주식회사 하이닉스반도체 Silicon wafer and method of fabricating the same
US20080090309A1 (en) 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US8658945B2 (en) 2004-02-27 2014-02-25 Applied Materials, Inc. Backside rapid thermal processing of patterned wafers
US20060035477A1 (en) 2004-08-12 2006-02-16 Karen Mai Methods and systems for rapid thermal processing
US7700376B2 (en) * 2005-04-06 2010-04-20 Applied Materials, Inc. Edge temperature compensation in thermal processing particularly useful for SOI wafers
JP2007095889A (en) * 2005-09-28 2007-04-12 Ushio Inc Light irradiation heating method
US7598150B2 (en) * 2006-11-20 2009-10-06 Applied Materials, Inc. Compensation techniques for substrate heating processes
KR100901823B1 (en) * 2007-08-17 2009-06-09 주식회사 실트론 Method of testing defect of silicon wafer
WO2009135137A2 (en) 2008-05-02 2009-11-05 Applied Materials, Inc. System for non radial temperature control for rotating substrates
JP5470769B2 (en) 2008-07-29 2014-04-16 株式会社Sumco Heat treatment method for silicon wafer
JP5407473B2 (en) * 2009-03-25 2014-02-05 株式会社Sumco Silicon wafer manufacturing method
US20120001301A1 (en) 2009-04-13 2012-01-05 Shin-Etsu Handotai Co., Ltd. Annealed wafer, method for producing annealed wafer and method for fabricating device
US8548312B2 (en) 2010-02-19 2013-10-01 Applied Materials, Inc. High efficiency high accuracy heater driver
JP6090752B2 (en) * 2013-10-04 2017-03-08 グローバルウェーハズ・ジャパン株式会社 Silicon wafer evaluation method
JP5976030B2 (en) * 2014-04-11 2016-08-23 グローバルウェーハズ・ジャパン株式会社 Heat treatment method for silicon wafer
WO2016019051A1 (en) 2014-07-31 2016-02-04 Sunedison Semiconductor Limited Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
JP6044660B2 (en) 2015-02-19 2016-12-14 信越半導体株式会社 Silicon wafer manufacturing method
CN106757357B (en) * 2017-01-10 2019-04-09 山东天岳先进材料科技有限公司 A kind of preparation method of high-purity semi-insulating silicon carbide substrate

Also Published As

Publication number Publication date
CN111868898A (en) 2020-10-30
DE102018203945A1 (en) 2019-09-19
TW201939614A (en) 2019-10-01
DE102018203945B4 (en) 2023-08-10
JP7062078B2 (en) 2022-05-02
KR20200131285A (en) 2020-11-23
US11972986B2 (en) 2024-04-30
KR102611774B1 (en) 2023-12-07
KR20220137152A (en) 2022-10-11
JP2021516866A (en) 2021-07-08
TWI709176B (en) 2020-11-01
US20210111080A1 (en) 2021-04-15
WO2019175207A1 (en) 2019-09-19

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