SG11202002270RA - Conformal doped amorphous silicon as nucleation layer for metal deposition - Google Patents
Conformal doped amorphous silicon as nucleation layer for metal depositionInfo
- Publication number
- SG11202002270RA SG11202002270RA SG11202002270RA SG11202002270RA SG11202002270RA SG 11202002270R A SG11202002270R A SG 11202002270RA SG 11202002270R A SG11202002270R A SG 11202002270RA SG 11202002270R A SG11202002270R A SG 11202002270RA SG 11202002270R A SG11202002270R A SG 11202002270RA
- Authority
- SG
- Singapore
- Prior art keywords
- amorphous silicon
- metal deposition
- nucleation layer
- doped amorphous
- conformal doped
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 238000001465 metallisation Methods 0.000 title 1
- 230000006911 nucleation Effects 0.000 title 1
- 238000010899 nucleation Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- Chemical & Material Sciences (AREA)
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762569883P | 2017-10-09 | 2017-10-09 | |
PCT/US2018/054932 WO2019074877A1 (en) | 2017-10-09 | 2018-10-09 | Conformal doped amorphous silicon as nucleation layer for metal deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202002270RA true SG11202002270RA (en) | 2020-04-29 |
Family
ID=66101682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202002270RA SG11202002270RA (en) | 2017-10-09 | 2018-10-09 | Conformal doped amorphous silicon as nucleation layer for metal deposition |
Country Status (6)
Country | Link |
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US (1) | US11244824B2 (en) |
JP (1) | JP2020537359A (en) |
KR (2) | KR20200052994A (en) |
CN (1) | CN111194361B (en) |
SG (1) | SG11202002270RA (en) |
WO (1) | WO2019074877A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023037452A1 (en) * | 2021-09-08 | 2023-03-16 | 株式会社Kokusai Electric | Semiconductor device production method, substrate processing method, substrate processing device, and recording medium |
US20240006109A1 (en) * | 2022-06-30 | 2024-01-04 | Western Digital Technologies, Inc. | Highly Textured 001 BiSb And Materials for Making Same |
CN117238848B (en) * | 2023-11-15 | 2024-02-02 | 合肥晶合集成电路股份有限公司 | Contact hole structure and forming method thereof |
Family Cites Families (22)
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US4766006A (en) * | 1986-05-15 | 1988-08-23 | Varian Associates, Inc. | Low pressure chemical vapor deposition of metal silicide |
JPH0760802B2 (en) * | 1987-04-21 | 1995-06-28 | 松下電器産業株式会社 | Method for producing p-type amorphous silicon |
KR100209856B1 (en) * | 1990-08-31 | 1999-07-15 | 가나이 쓰도무 | Method of manufacturing semiconductor device |
JP3193402B2 (en) * | 1990-08-31 | 2001-07-30 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
JPH052137A (en) * | 1991-06-24 | 1993-01-08 | Nikon Corp | Minute object grasping device, inspecting and sampling device and minute object grasping method |
DE69323716T2 (en) * | 1993-01-28 | 1999-08-19 | Applied Materials Inc | Process for CVD coating of a multilayer structure in a single chamber |
US5789030A (en) * | 1996-03-18 | 1998-08-04 | Micron Technology, Inc. | Method for depositing doped amorphous or polycrystalline silicon on a substrate |
US5902129A (en) * | 1997-04-07 | 1999-05-11 | Lsi Logic Corporation | Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers |
WO2000006795A1 (en) | 1998-07-27 | 2000-02-10 | Applied Materials, Inc. | Cvd tungsten deposition on oxide substrates |
US6197669B1 (en) * | 1999-04-15 | 2001-03-06 | Taiwan Semicondcutor Manufacturing Company | Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process |
US7109097B2 (en) * | 2004-12-14 | 2006-09-19 | Applied Materials, Inc. | Process sequence for doped silicon fill of deep trenches |
WO2007075369A1 (en) * | 2005-12-16 | 2007-07-05 | Asm International N.V. | Low temperature doped silicon layer formation |
JP2008003468A (en) * | 2006-06-26 | 2008-01-10 | Mitsubishi Rayon Co Ltd | Method for producing electromagnetic shielding film |
JP2008034684A (en) * | 2006-07-31 | 2008-02-14 | Sony Corp | Solid-state imaging device, manufacturing method thereof, and imaging apparatus |
US7846762B2 (en) * | 2008-09-22 | 2010-12-07 | Applied Materials, Inc. | Integrated emitter formation and passivation |
JP5624425B2 (en) * | 2010-10-14 | 2014-11-12 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US20120167963A1 (en) * | 2010-12-31 | 2012-07-05 | Ovshinsky Stanford R | Photovoltaic Device Structure with Primer Layer |
CN102176496B (en) * | 2011-01-31 | 2012-11-21 | 中国科学院半导体研究所 | Amorphous silicon solar cell optimized by modulating energy band structure of intrinsic layer via hydrogen and manufacturing method thereof |
CN104393120B (en) * | 2014-10-20 | 2017-01-18 | 上海空间电源研究所 | Preparation method and purpose of top cell P type layer of amorphous silicon germanium thin-film solar cell |
US9793139B2 (en) * | 2015-10-29 | 2017-10-17 | Sandisk Technologies Llc | Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines |
US10468263B2 (en) | 2015-12-19 | 2019-11-05 | Applied Materials, Inc. | Tungsten deposition without barrier layer |
TWI716511B (en) * | 2015-12-19 | 2021-01-21 | 美商應用材料股份有限公司 | Conformal amorphous silicon as nucleation layer for w ald process |
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2018
- 2018-10-09 KR KR1020207013144A patent/KR20200052994A/en not_active IP Right Cessation
- 2018-10-09 CN CN201880064867.XA patent/CN111194361B/en active Active
- 2018-10-09 SG SG11202002270RA patent/SG11202002270RA/en unknown
- 2018-10-09 KR KR1020237045060A patent/KR20240006002A/en not_active Application Discontinuation
- 2018-10-09 JP JP2020540695A patent/JP2020537359A/en active Pending
- 2018-10-09 WO PCT/US2018/054932 patent/WO2019074877A1/en active Application Filing
- 2018-10-09 US US16/754,619 patent/US11244824B2/en active Active
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CN111194361B (en) | 2022-12-13 |
US11244824B2 (en) | 2022-02-08 |
CN111194361A (en) | 2020-05-22 |
JP2020537359A (en) | 2020-12-17 |
WO2019074877A1 (en) | 2019-04-18 |
KR20240006002A (en) | 2024-01-12 |
KR20200052994A (en) | 2020-05-15 |
US20200335334A1 (en) | 2020-10-22 |
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