SG11202005432RA - Silicide films through selective deposition - Google Patents
Silicide films through selective depositionInfo
- Publication number
- SG11202005432RA SG11202005432RA SG11202005432RA SG11202005432RA SG11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA SG 11202005432R A SG11202005432R A SG 11202005432RA
- Authority
- SG
- Singapore
- Prior art keywords
- selective deposition
- silicide films
- silicide
- films
- selective
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 title 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201762599711P | 2017-12-17 | 2017-12-17 | |
PCT/US2018/065686 WO2019118845A1 (en) | 2017-12-17 | 2018-12-14 | Silicide films through selective deposition |
Publications (1)
Publication Number | Publication Date |
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SG11202005432RA true SG11202005432RA (en) | 2020-07-29 |
Family
ID=66814658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202005432RA SG11202005432RA (en) | 2017-12-17 | 2018-12-14 | Silicide films through selective deposition |
Country Status (6)
Country | Link |
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US (3) | US10607841B2 (en) |
JP (1) | JP2021507520A (en) |
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- 2018-12-14 US US16/220,816 patent/US10607841B2/en active Active
- 2018-12-14 CN CN201880086359.1A patent/CN111602228B/en active Active
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- 2018-12-14 JP JP2020533098A patent/JP2021507520A/en active Pending
- 2018-12-14 WO PCT/US2018/065686 patent/WO2019118845A1/en active Application Filing
- 2018-12-14 KR KR1020207020546A patent/KR102358527B1/en active IP Right Grant
-
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- 2020-03-31 US US16/836,858 patent/US10950450B2/en active Active
-
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- 2021-03-10 US US17/197,871 patent/US11978635B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10607841B2 (en) | 2020-03-31 |
US20190189453A1 (en) | 2019-06-20 |
CN117832071A (en) | 2024-04-05 |
US20200227265A1 (en) | 2020-07-16 |
US10950450B2 (en) | 2021-03-16 |
KR20200088519A (en) | 2020-07-22 |
JP2021507520A (en) | 2021-02-22 |
US11978635B2 (en) | 2024-05-07 |
CN111602228A (en) | 2020-08-28 |
CN111602228B (en) | 2023-12-12 |
KR102358527B1 (en) | 2022-02-08 |
US20210202256A1 (en) | 2021-07-01 |
WO2019118845A1 (en) | 2019-06-20 |
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