SG10201404749QA - Adhesion layer for through silicon via metallization - Google Patents
Adhesion layer for through silicon via metallizationInfo
- Publication number
- SG10201404749QA SG10201404749QA SG10201404749QA SG10201404749QA SG10201404749QA SG 10201404749Q A SG10201404749Q A SG 10201404749QA SG 10201404749Q A SG10201404749Q A SG 10201404749QA SG 10201404749Q A SG10201404749Q A SG 10201404749QA SG 10201404749Q A SG10201404749Q A SG 10201404749QA
- Authority
- SG
- Singapore
- Prior art keywords
- adhesion layer
- silicon via
- via metallization
- metallization
- silicon
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/966,168 US8980746B2 (en) | 2013-08-13 | 2013-08-13 | Adhesion layer for through silicon via metallization |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201404749QA true SG10201404749QA (en) | 2015-03-30 |
Family
ID=52467137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201404749QA SG10201404749QA (en) | 2013-08-13 | 2014-08-08 | Adhesion layer for through silicon via metallization |
Country Status (5)
Country | Link |
---|---|
US (1) | US8980746B2 (en) |
KR (1) | KR102383378B1 (en) |
CN (1) | CN104377162B (en) |
SG (1) | SG10201404749QA (en) |
TW (1) | TWI638423B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10352991B2 (en) | 2015-07-21 | 2019-07-16 | Fermi Research Alliance, Llc | Edgeless large area ASIC |
US10075657B2 (en) | 2015-07-21 | 2018-09-11 | Fermi Research Alliance, Llc | Edgeless large area camera system |
US9899260B2 (en) | 2016-01-21 | 2018-02-20 | Micron Technology, Inc. | Method for fabricating a semiconductor device |
US9881833B1 (en) * | 2016-10-26 | 2018-01-30 | International Business Machines Corporation | Barrier planarization for interconnect metallization |
US11133218B1 (en) * | 2020-01-23 | 2021-09-28 | Tae Young Lee | Semiconductor apparatus having through silicon via structure and manufacturing method thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6075291A (en) * | 1998-02-27 | 2000-06-13 | Micron Technology, Inc. | Structure for contact formation using a silicon-germanium alloy |
US7084460B2 (en) * | 2003-11-03 | 2006-08-01 | International Business Machines Corporation | Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates |
US7368379B2 (en) * | 2005-08-04 | 2008-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer interconnect structure for semiconductor devices |
US7276796B1 (en) * | 2006-03-15 | 2007-10-02 | International Business Machines Corporation | Formation of oxidation-resistant seed layer for interconnect applications |
US8232647B2 (en) * | 2008-02-21 | 2012-07-31 | International Business Machines Corporation | Structure and process for metallization in high aspect ratio features |
US20100090342A1 (en) | 2008-10-15 | 2010-04-15 | Hui-Lin Chang | Metal Line Formation Through Silicon/Germanium Soaking |
EP2500930A4 (en) * | 2009-11-09 | 2013-05-22 | Mitsubishi Gas Chemical Co | Etching liquid for etching silicon substrate rear surface in through silicon via process and method for manufacturing semiconductor chip having through silicon via using the etching liquid |
CN102468220B (en) * | 2010-11-08 | 2013-12-25 | 中国科学院微电子研究所 | Metal interconnection structure and forming method thereof |
US8487425B2 (en) * | 2011-06-23 | 2013-07-16 | International Business Machines Corporation | Optimized annular copper TSV |
US8753975B1 (en) * | 2013-02-01 | 2014-06-17 | Globalfoundries Inc. | Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device |
-
2013
- 2013-08-13 US US13/966,168 patent/US8980746B2/en active Active
-
2014
- 2014-08-08 SG SG10201404749QA patent/SG10201404749QA/en unknown
- 2014-08-12 TW TW103127654A patent/TWI638423B/en active
- 2014-08-12 KR KR1020140104199A patent/KR102383378B1/en active IP Right Grant
- 2014-08-13 CN CN201410395895.3A patent/CN104377162B/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102383378B1 (en) | 2022-04-05 |
CN104377162A (en) | 2015-02-25 |
CN104377162B (en) | 2017-05-10 |
KR20150020100A (en) | 2015-02-25 |
TWI638423B (en) | 2018-10-11 |
US20150050808A1 (en) | 2015-02-19 |
US8980746B2 (en) | 2015-03-17 |
TW201528426A (en) | 2015-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1219064A1 (en) | Drug coating layer | |
EP2992562C0 (en) | Stress relieving semiconductor layer | |
EP2839341A4 (en) | Silicon hardmask layer for directed self-assembly | |
EP3614676C0 (en) | Layer id signaling using extension mechanism | |
EP2990838A4 (en) | Substrate having antireflective layer | |
EP2980856A4 (en) | Semiconductor device | |
EP2879186A4 (en) | Silicon carbide semiconductor device | |
EP3076431A4 (en) | Semiconductor device | |
EP3010042A4 (en) | Semiconductor device | |
GB2514918B (en) | Nitride semiconductor substrate | |
EP3077682B8 (en) | Layer arrangement for connecting components | |
EP2955836A4 (en) | Semiconductor device | |
EP3076425A4 (en) | Semiconductor device | |
EP3018712A4 (en) | Semiconductor device | |
EP3076435A4 (en) | Semiconductor device | |
EP3084814A4 (en) | Heterogeneous layer device | |
EP3010037A4 (en) | Silicon carbide semiconductor device manufacturing method | |
EP2991099A4 (en) | Handle substrate for composite substrate for semiconductor | |
GB2511418B (en) | Substrate carrier | |
GB201309717D0 (en) | Interface layer for electronic devices | |
SG11201507155TA (en) | Substrate position aligner | |
EP2921572A4 (en) | Film deposition device | |
SG10201404749QA (en) | Adhesion layer for through silicon via metallization | |
EP2811529A4 (en) | Silicon carbide semiconductor device | |
EP2916346A4 (en) | Handle substrate for composite substrate for semiconductor |