SG11201906424WA - Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements - Google Patents
Mitigation of inaccuracies related to grating asymmetries in scatterometry measurementsInfo
- Publication number
- SG11201906424WA SG11201906424WA SG11201906424WA SG11201906424WA SG11201906424WA SG 11201906424W A SG11201906424W A SG 11201906424WA SG 11201906424W A SG11201906424W A SG 11201906424WA SG 11201906424W A SG11201906424W A SG 11201906424WA SG 11201906424W A SG11201906424W A SG 11201906424WA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- grating
- pct
- asymmetries
- resolved
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/32—Fiducial marks and measuring scales within the optical system
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
- G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Optics & Photonics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Developing Agents For Electrophotography (AREA)
- Eye Examination Apparatus (AREA)
- Measuring And Recording Apparatus For Diagnosis (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762457787P | 2017-02-10 | 2017-02-10 | |
| PCT/US2017/066853 WO2018147938A1 (en) | 2017-02-10 | 2017-12-15 | Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201906424WA true SG11201906424WA (en) | 2019-08-27 |
Family
ID=63107715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201906424WA SG11201906424WA (en) | 2017-02-10 | 2017-12-15 | Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11112704B2 (enExample) |
| JP (1) | JP7179742B2 (enExample) |
| KR (1) | KR102495480B1 (enExample) |
| CN (1) | CN110312966B (enExample) |
| DE (1) | DE112017007043T5 (enExample) |
| SG (1) | SG11201906424WA (enExample) |
| TW (1) | TWI767989B (enExample) |
| WO (1) | WO2018147938A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| TWI799654B (zh) * | 2018-11-29 | 2023-04-21 | 美商科磊股份有限公司 | 度量衡目標,半導體度量衡的方法,電腦程式產品,及度量衡模組 |
| US11256177B2 (en) | 2019-09-11 | 2022-02-22 | Kla Corporation | Imaging overlay targets using Moiré elements and rotational symmetry arrangements |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| US11720031B2 (en) | 2021-06-28 | 2023-08-08 | Kla Corporation | Overlay design for electron beam and scatterometry overlay measurements |
| US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| US12032300B2 (en) | 2022-02-14 | 2024-07-09 | Kla Corporation | Imaging overlay with mutually coherent oblique illumination |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| EP4303658A1 (en) * | 2022-07-05 | 2024-01-10 | ASML Netherlands B.V. | Method of correction metrology signal data |
| US12253805B2 (en) * | 2022-08-11 | 2025-03-18 | Kla Corporation | Scatterometry overlay metrology with orthogonal fine-pitch segmentation |
| US20240167813A1 (en) * | 2022-11-23 | 2024-05-23 | Kla Corporation | System and method for suppression of tool induced shift in scanning overlay metrology |
| CN116105599B (zh) * | 2023-01-17 | 2025-10-24 | 中国科学院微电子研究所 | 非对称光栅标记的误差检测方法及装置 |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
| US12411420B2 (en) * | 2023-09-29 | 2025-09-09 | Kla Corporation | Small in-die target design for overlay measurement |
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| US4757207A (en) * | 1987-03-03 | 1988-07-12 | International Business Machines Corporation | Measurement of registration of overlaid test patterns by the use of reflected light |
| CA2073409A1 (en) * | 1991-10-15 | 1993-04-16 | Paul F. Sullivan | Light beam position detection and control apparatus employing diffraction patterns |
| US6023338A (en) * | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
| JP2001194321A (ja) * | 2000-01-12 | 2001-07-19 | Tokyo Seimitsu Co Ltd | 半導体ウエハの検査装置 |
| US7541201B2 (en) * | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| IL138552A (en) * | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Lateral shift measurement using an optical technique |
| TW526573B (en) * | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
| WO2002065545A2 (en) * | 2001-02-12 | 2002-08-22 | Sensys Instruments Corporation | Overlay alignment metrology using diffraction gratings |
| US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| DE10142317B4 (de) * | 2001-08-30 | 2010-07-01 | Advanced Micro Devices, Inc., Sunnyvale | Vorrichtung zur Bestimmung eines Überlagerungsfehlers und kritischer Dimensionen in einer Halbleiterstruktur mittels Streuungsmessung |
| DE10142318C1 (de) * | 2001-08-30 | 2003-01-30 | Advanced Micro Devices Inc | Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler |
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| JP3967935B2 (ja) * | 2002-02-25 | 2007-08-29 | 株式会社日立製作所 | 合わせ精度計測装置及びその方法 |
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| NL2002932A1 (nl) * | 2008-06-02 | 2009-12-03 | Asml Netherlands Bv | Sub-wavelength segmentation in measurement targets on substrates. |
| NL2003404A (en) * | 2008-09-16 | 2010-03-17 | Asml Netherlands Bv | Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| KR101295203B1 (ko) * | 2008-10-06 | 2013-08-09 | 에이에스엠엘 네델란즈 비.브이. | 2차원 타겟을 이용한 리소그래피 포커스 및 조사량 측정 |
| US8189202B2 (en) * | 2009-08-04 | 2012-05-29 | Zygo Corporation | Interferometer for determining overlay errors |
| TWI401549B (zh) * | 2009-12-02 | 2013-07-11 | Ind Tech Res Inst | 二維陣列疊對圖樣之設計方法、疊對誤差量測方法及其量測系統 |
| US9007584B2 (en) * | 2010-12-27 | 2015-04-14 | Nanometrics Incorporated | Simultaneous measurement of multiple overlay errors using diffraction based overlay |
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| US8913237B2 (en) * | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| WO2014074873A1 (en) | 2012-11-09 | 2014-05-15 | Kla-Tencor Corporation | Reducing algorithmic inaccuracy in scatterometry overlay metrology |
| US9733572B2 (en) | 2013-03-20 | 2017-08-15 | Asml Netherlands B.V. | Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method |
| TW201935147A (zh) * | 2013-07-26 | 2019-09-01 | 美商克萊譚克公司 | 反射對稱式散射量測之重疊目標及方法 |
| WO2015062854A1 (en) * | 2013-10-30 | 2015-05-07 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| US9329495B2 (en) * | 2013-11-20 | 2016-05-03 | Globalfoundries Inc. | Overlay metrology system and method |
| US9784690B2 (en) * | 2014-05-12 | 2017-10-10 | Kla-Tencor Corporation | Apparatus, techniques, and target designs for measuring semiconductor parameters |
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| US9305884B1 (en) * | 2014-09-26 | 2016-04-05 | United Microelectronics Corp. | Overlay mark and method for forming the same |
| US10210606B2 (en) * | 2014-10-14 | 2019-02-19 | Kla-Tencor Corporation | Signal response metrology for image based and scatterometry overlay measurements |
| KR102665579B1 (ko) | 2015-05-19 | 2024-05-10 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
| CN108369087B (zh) * | 2015-12-08 | 2021-04-30 | 科磊股份有限公司 | 使用偏振目标及偏振照明以控制衍射级的振幅及相位 |
| CN109073981B (zh) * | 2016-04-04 | 2021-09-24 | 科磊股份有限公司 | 通过填充因数调制的工艺兼容性改善 |
-
2017
- 2017-12-15 WO PCT/US2017/066853 patent/WO2018147938A1/en not_active Ceased
- 2017-12-15 CN CN201780086130.3A patent/CN110312966B/zh active Active
- 2017-12-15 DE DE112017007043.0T patent/DE112017007043T5/de active Pending
- 2017-12-15 US US15/753,187 patent/US11112704B2/en active Active
- 2017-12-15 KR KR1020197026117A patent/KR102495480B1/ko active Active
- 2017-12-15 JP JP2019543203A patent/JP7179742B2/ja active Active
- 2017-12-15 SG SG11201906424WA patent/SG11201906424WA/en unknown
-
2018
- 2018-02-08 TW TW107104425A patent/TWI767989B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102495480B1 (ko) | 2023-02-02 |
| JP7179742B2 (ja) | 2022-11-29 |
| US20190033726A1 (en) | 2019-01-31 |
| WO2018147938A1 (en) | 2018-08-16 |
| KR20190107298A (ko) | 2019-09-19 |
| CN110312966A (zh) | 2019-10-08 |
| DE112017007043T5 (de) | 2020-01-16 |
| US11112704B2 (en) | 2021-09-07 |
| TW201835679A (zh) | 2018-10-01 |
| CN110312966B (zh) | 2022-03-25 |
| JP2020510857A (ja) | 2020-04-09 |
| TWI767989B (zh) | 2022-06-21 |
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