SG11201900913VA - Defect marking for semiconductor wafer inspection - Google Patents

Defect marking for semiconductor wafer inspection

Info

Publication number
SG11201900913VA
SG11201900913VA SG11201900913VA SG11201900913VA SG11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA SG 11201900913V A SG11201900913V A SG 11201900913VA
Authority
SG
Singapore
Prior art keywords
defect
international
wafer
tool
california
Prior art date
Application number
SG11201900913VA
Other languages
English (en)
Inventor
David W Shortt
Steven R Lange
Junwei Wei
Daniel Kapp
Charles Amsden
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201900913VA publication Critical patent/SG11201900913VA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/44—Sample treatment involving radiation, e.g. heat
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9506—Optical discs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/888—Marking defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
SG11201900913VA 2016-09-27 2017-09-26 Defect marking for semiconductor wafer inspection SG11201900913VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662400182P 2016-09-27 2016-09-27
US15/430,817 US10082470B2 (en) 2016-09-27 2017-02-13 Defect marking for semiconductor wafer inspection
PCT/US2017/053540 WO2018064072A1 (en) 2016-09-27 2017-09-26 Defect marking for semiconductor wafer inspection

Publications (1)

Publication Number Publication Date
SG11201900913VA true SG11201900913VA (en) 2019-04-29

Family

ID=61686085

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900913VA SG11201900913VA (en) 2016-09-27 2017-09-26 Defect marking for semiconductor wafer inspection

Country Status (7)

Country Link
US (1) US10082470B2 (zh)
JP (1) JP6918931B2 (zh)
KR (1) KR102235580B1 (zh)
CN (1) CN109690748B (zh)
SG (1) SG11201900913VA (zh)
TW (1) TWI722246B (zh)
WO (1) WO2018064072A1 (zh)

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US10928740B2 (en) * 2017-02-03 2021-02-23 Kla Corporation Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer
US20190096057A1 (en) 2017-05-11 2019-03-28 Jacob Nathaniel Allen Object inspection system and method for inspecting an object
US11035804B2 (en) 2017-06-28 2021-06-15 Kla Corporation System and method for x-ray imaging and classification of volume defects
KR102037748B1 (ko) * 2017-12-06 2019-11-29 에스케이실트론 주식회사 웨이퍼의 결함 영역을 평가하는 방법
US11054250B2 (en) * 2018-04-11 2021-07-06 International Business Machines Corporation Multi-channel overlay metrology
TWI662250B (zh) * 2018-05-24 2019-06-11 仲鈜科技股份有限公司 標記載體上的多個被動元件中的缺陷品的系統及其方法
CN108760753B (zh) * 2018-05-31 2023-12-12 永捷电子（始兴）有限公司 Mark点检测装置及其检测方法
KR20210035210A (ko) * 2018-07-30 2021-03-31 닛뽄 가야쿠 가부시키가이샤 마킹 장치, 마킹 방법, 편광판의 제조 방법 및 편광판
TWI708041B (zh) * 2018-10-17 2020-10-21 所羅門股份有限公司 檢測與標記瑕疵的方法
CN114192440B (zh) * 2020-09-18 2024-05-03 中国科学院微电子研究所 一种不合格晶圆的检出装置及检出方法、晶圆制造设备
US11513079B2 (en) 2020-10-09 2022-11-29 Fei Company Method and system for wafer defect inspection
US20220196723A1 (en) * 2020-12-18 2022-06-23 Kla Corporation System and method for automatically identifying defect-based test coverage gaps in semiconductor devices
CN113884502A (zh) * 2021-12-07 2022-01-04 武汉华工激光工程有限责任公司 基于线阵相机的载板检测及激光标记系统和方法
WO2023157223A1 (ja) * 2022-02-18 2023-08-24 三菱電機株式会社 半導体チップのマーキング方法、半導体チップの製造方法および半導体チップ
TWI833390B (zh) * 2022-02-23 2024-02-21 南亞科技股份有限公司 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體
KR20240045845A (ko) 2022-09-30 2024-04-08 주식회사 에스에프에이 Sem-fib 분석 시스템 및 sem-fib 분석 방법
KR20240080453A (ko) 2022-11-30 2024-06-07 주식회사 에스에프에이 부도체 샘플의 sem 자동 검사를 위한 자동초점 조정방법 및 부도체 샘플의 sem 자동 검사 시스템
CN116013800B (zh) * 2022-12-30 2024-02-27 胜科纳米(苏州)股份有限公司 一种缺陷定位方法、装置、电子设备及存储介质

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US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
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KR100279962B1 (ko) * 1997-12-29 2001-03-02 윤종용 반도체 웨이퍼의 벌크디펙트의 모폴로지 분석방법 및 표면디펙트의 모폴로지 분석방법
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Also Published As

Publication number Publication date
KR102235580B1 (ko) 2021-04-01
WO2018064072A1 (en) 2018-04-05
JP6918931B2 (ja) 2021-08-11
JP2019535138A (ja) 2019-12-05
CN109690748B (zh) 2020-07-28
US10082470B2 (en) 2018-09-25
TW201814873A (zh) 2018-04-16
TWI722246B (zh) 2021-03-21
KR20190049890A (ko) 2019-05-09
CN109690748A (zh) 2019-04-26
US20180088056A1 (en) 2018-03-29

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