SG11201900650WA - Crucible for crystallization of molten silicon, process for its manufacture and use thereof - Google Patents

Crucible for crystallization of molten silicon, process for its manufacture and use thereof

Info

Publication number
SG11201900650WA
SG11201900650WA SG11201900650WA SG11201900650WA SG11201900650WA SG 11201900650W A SG11201900650W A SG 11201900650WA SG 11201900650W A SG11201900650W A SG 11201900650WA SG 11201900650W A SG11201900650W A SG 11201900650WA SG 11201900650W A SG11201900650W A SG 11201900650WA
Authority
SG
Singapore
Prior art keywords
international
rule
crucible
pct
applicant
Prior art date
Application number
SG11201900650WA
Other languages
English (en)
Inventor
Julien Laurent
Etienne Drode
Christian Martin
Original Assignee
Vesuvius France Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesuvius France Sa filed Critical Vesuvius France Sa
Publication of SG11201900650WA publication Critical patent/SG11201900650WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201900650WA 2016-08-03 2017-08-03 Crucible for crystallization of molten silicon, process for its manufacture and use thereof SG11201900650WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16182660 2016-08-03
PCT/EP2017/069661 WO2018024830A1 (en) 2016-08-03 2017-08-03 Crucible for crystallization of molten silicon, process for its manufacture and use thereof

Publications (1)

Publication Number Publication Date
SG11201900650WA true SG11201900650WA (en) 2019-02-27

Family

ID=56571201

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900650WA SG11201900650WA (en) 2016-08-03 2017-08-03 Crucible for crystallization of molten silicon, process for its manufacture and use thereof

Country Status (4)

Country Link
EP (1) EP3494247A1 (de)
SG (1) SG11201900650WA (de)
TW (1) TW201816200A (de)
WO (1) WO2018024830A1 (de)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1739209A1 (de) * 2005-07-01 2007-01-03 Vesuvius Crucible Company Tiegel zur Kristallisierung von Silicium
DE102010000687B4 (de) 2010-01-05 2012-10-18 Solarworld Innovations Gmbh Tiegel und Verfahren zur Herstellung von Silizium-Blöcken
JP5676900B2 (ja) 2010-03-26 2015-02-25 三菱マテリアル株式会社 多結晶シリコンインゴットの製造方法
CN105063748B (zh) 2015-08-14 2017-11-10 烟台核晶陶瓷新材料有限公司 一种多晶铸锭用高效坩埚及其制备方法

Also Published As

Publication number Publication date
EP3494247A1 (de) 2019-06-12
TW201816200A (zh) 2018-05-01
WO2018024830A1 (en) 2018-02-08

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