SG11201900650WA - Crucible for crystallization of molten silicon, process for its manufacture and use thereof - Google Patents

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 08 February 2018 (08.02.2018) WIP0 I PCT IiiimmomitilmonoloomoiolowflinomovoimIE (10) International Publication Number WO 2018/024830 Al (51) International Patent Classification: C30B 11/00 (2006.01) C30B 35/00 (2006.01) C30B 29/06 (2006.01) (21) International Application Number: PCT/EP2017/069661 (22) International Filing Date: 03 August 2017 (03.08.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16182660.7 03 August 2016 (03.08.2016) EP (71) Applicant: VESUVIUS FRANCE S.A. [FR/FR]; Rue Paul Deudon, 68, 59750 FEIGNIES (FR). (72) Inventors: LAURENT, Julien; 26 rue Saint Exupery, 59600 Maubeuge (FR). DRODE, Etienne; 19 me de Bel- lonne, 62112 Gouy sous Bellonne (FR). MARTIN, Chris- tian; 10 Allee de la Grenouillere, 78680 Epone (FR). (74) Agent: BROHEZ, Veronique; VESUVIUS CROUP S.A., 17 rue de DOUVRAIN, 7011 GHLIN (BE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: as to the identity of the inventor (Rule 4.17(i)) as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(ii)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) of inventorship (Rule 4.17(iv)) Published: — with international search report (Art. 21(3)) = (54) Title: CRUCIBLE FOR CRYSTALLIZATION OF MOLTEN SILICON, PROCESS FOR ITS MANUFACTURE AND USE — THEREOF (57) : Crucible for the crystallization of molten silicon coated with silicon nitride where embedded Si02 particles hav- ing a particle size up to 500 µm and a surface density > 100 cm -2 , emerge in the inner volume of the crucible enabling the produc- tion of silicon ingot with improved electrical properties. 60 • n n • • I II III IV V FIG.1 100 80 W O 20 18/024830 Al 40 20 0