SG11201900623PA - Position sensor, lithographic apparatus and method for manufacturing devices - Google Patents

Position sensor, lithographic apparatus and method for manufacturing devices

Info

Publication number
SG11201900623PA
SG11201900623PA SG11201900623PA SG11201900623PA SG11201900623PA SG 11201900623P A SG11201900623P A SG 11201900623PA SG 11201900623P A SG11201900623P A SG 11201900623PA SG 11201900623P A SG11201900623P A SG 11201900623PA SG 11201900623P A SG11201900623P A SG 11201900623PA
Authority
SG
Singapore
Prior art keywords
box
veldhoven
waveband
international
radiation
Prior art date
Application number
SG11201900623PA
Other languages
English (en)
Inventor
Simon Huisman
Simon Mathijssen
Sebastianus Goorden
Duygu Akbulut
Alessandro Polo
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG11201900623PA publication Critical patent/SG11201900623PA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046Strategy, e.g. mark, sensor or wavelength selection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049Technique, e.g. interferometric
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/208Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3083Birefringent or phase retarding elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Die Bonding (AREA)
SG11201900623PA 2016-08-30 2017-06-30 Position sensor, lithographic apparatus and method for manufacturing devices SG11201900623PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16186333 2016-08-30
PCT/EP2017/066321 WO2018041440A1 (en) 2016-08-30 2017-06-30 Position sensor, lithographic apparatus and method for manufacturing devices

Publications (1)

Publication Number Publication Date
SG11201900623PA true SG11201900623PA (en) 2019-02-27

Family

ID=56883566

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900623PA SG11201900623PA (en) 2016-08-30 2017-06-30 Position sensor, lithographic apparatus and method for manufacturing devices

Country Status (8)

Country Link
US (1) US10527959B2 (ja)
JP (1) JP6744986B2 (ja)
KR (1) KR102203005B1 (ja)
CN (1) CN109643072B (ja)
NL (1) NL2019155A (ja)
SG (1) SG11201900623PA (ja)
TW (1) TWI784963B (ja)
WO (1) WO2018041440A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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KR102260941B1 (ko) 2016-12-19 2021-06-04 에이에스엠엘 네델란즈 비.브이. 계측 센서, 리소그래피 장치 및 디바이스 제조 방법
JP6584567B1 (ja) * 2018-03-30 2019-10-02 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法
NL2022852A (en) 2018-04-26 2019-10-31 Asml Holding Nv Alignment sensor apparatus for process sensivity compensation
WO2020007558A1 (en) * 2018-07-06 2020-01-09 Asml Netherlands B.V. Position sensor
WO2020126810A1 (en) * 2018-12-20 2020-06-25 Asml Holding N.V. Apparatus for and method of simultaneously acquiring parallel alignment marks
US11815675B2 (en) 2019-08-09 2023-11-14 Asml Netherlands B.V. Metrology device and phase modulator apparatus therefor comprising a first moving grating and a first compensatory grating element
US11803130B2 (en) 2019-08-09 2023-10-31 Asml Netherlands B.V. Phase modulators in alignment to decrease mark size
CN115023664A (zh) * 2020-02-05 2022-09-06 Asml控股股份有限公司 用于感测对准标记的设备
JP2023540684A (ja) * 2020-08-17 2023-09-26 東京エレクトロン株式会社 同軸透視検査システム

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US4710026A (en) 1985-03-22 1987-12-01 Nippon Kogaku K. K. Position detection apparatus
US5148214A (en) * 1986-05-09 1992-09-15 Canon Kabushiki Kaisha Alignment and exposure apparatus
US4814829A (en) 1986-06-12 1989-03-21 Canon Kabushiki Kaisha Projection exposure apparatus
JPH0785465B2 (ja) * 1986-06-12 1995-09-13 キヤノン株式会社 観察装置
JP3379200B2 (ja) 1994-03-25 2003-02-17 株式会社ニコン 位置検出装置
US5801390A (en) 1996-02-09 1998-09-01 Nikon Corporation Position-detection method and apparatus with a grating mark
KR970062816A (ko) 1996-02-13 1997-09-12 박병재 헤드 램프를 이용한 엔진룸 조사 장치
US20010026357A1 (en) 1996-04-26 2001-10-04 Nikon Corporation Position transducer and exposure apparatus with same
DE69840031D1 (de) 1997-11-20 2008-10-30 Nikon Corp Methode und System zur Detektion einer Marke
JP2001267196A (ja) * 2000-03-14 2001-09-28 Nikon Corp 位置検出装置、位置検出方法、露光装置、及び露光方法
DE60319462T2 (de) 2002-06-11 2009-03-12 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US7365848B2 (en) 2004-12-01 2008-04-29 Asml Holding N.V. System and method using visible and infrared light to align and measure alignment patterns on multiple layers
US7800761B2 (en) 2006-04-12 2010-09-21 Massachusetts Institute Of Technology Infrared interferometric-spatial-phase imaging using backside wafer marks
NL1036179A1 (nl) 2007-11-20 2009-05-25 Asml Netherlands Bv Lithographic apparatus and method.
NL1036476A1 (nl) 2008-02-01 2009-08-04 Asml Netherlands Bv Alignment mark and a method of aligning a substrate comprising such an alignment mark.
CN101526750B (zh) * 2009-01-13 2011-06-29 上海微电子装备有限公司 用于光刻设备的对准系统及应用其的光刻设备
NL2003871A (en) * 2009-02-04 2010-08-05 Asml Netherlands Bv Imprint lithography.
CN101551523B (zh) * 2009-04-30 2010-10-20 上海微电子装备有限公司 相干成像系统
JP5406624B2 (ja) * 2009-08-10 2014-02-05 キヤノン株式会社 検出装置、露光装置及びデバイスの製造方法
KR101215094B1 (ko) * 2010-10-25 2012-12-24 삼성전자주식회사 피측정체 정렬장치
JP2014503843A (ja) 2010-12-06 2014-02-13 エーエスエムエル ネザーランズ ビー.ブイ. 物品の検査方法および検査装置、euvリソグラフィレチクル、リソグラフィ装置、ならびにデバイス製造方法
CN103092011B (zh) * 2011-11-01 2015-08-26 上海微电子装备有限公司 用于光刻系统的对准装置
NL2010189A (en) 2012-02-07 2013-08-08 Asml Holding Nv Methods and apparatuses for detecting contaminant particles.
JP2013205702A (ja) 2012-03-29 2013-10-07 Hitachi High-Technologies Corp プロキシミティ露光装置、プロキシミティ露光装置のアライメント方法、及びパネル基板の製造方法
CN103365122B (zh) * 2012-03-31 2016-01-20 上海微电子装备有限公司 用于光刻设备的自参考干涉对准系统
JP6150490B2 (ja) 2012-10-19 2017-06-21 キヤノン株式会社 検出装置、露光装置、それを用いたデバイスの製造方法
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US9733572B2 (en) 2013-03-20 2017-08-15 Asml Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
CN104062859B (zh) * 2013-03-21 2016-08-10 上海微电子装备有限公司 一种光刻设备对准系统
JP6342486B2 (ja) 2013-10-09 2018-06-13 エーエスエムエル ネザーランズ ビー.ブイ. 偏光非依存干渉計
KR102106937B1 (ko) * 2016-02-19 2020-05-07 에이에스엠엘 네델란즈 비.브이. 구조체 측정 방법, 검사 장치, 리소그래피 시스템, 디바이스 제조 방법 및 그 안에 사용되는 파장-선택 필터

Also Published As

Publication number Publication date
NL2019155A (en) 2018-03-06
US20190212658A1 (en) 2019-07-11
WO2018041440A1 (en) 2018-03-08
CN109643072A (zh) 2019-04-16
JP2019532328A (ja) 2019-11-07
KR20190041525A (ko) 2019-04-22
KR102203005B1 (ko) 2021-01-14
US10527959B2 (en) 2020-01-07
TWI784963B (zh) 2022-12-01
JP6744986B2 (ja) 2020-08-19
TW201820057A (zh) 2018-06-01
CN109643072B (zh) 2021-10-26

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