SG11201900622UA - Chemically amplified positive photoresist composition and pattern forming method using same - Google Patents
Chemically amplified positive photoresist composition and pattern forming method using sameInfo
- Publication number
- SG11201900622UA SG11201900622UA SG11201900622UA SG11201900622UA SG11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- chihama
- kakegawa
- shizuoka
- shi
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16002196 | 2016-10-12 | ||
PCT/EP2017/075738 WO2018069274A1 (en) | 2016-10-12 | 2017-10-10 | Chemically amplified positive photoresist composition and pattern forming method using same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201900622UA true SG11201900622UA (en) | 2019-04-29 |
Family
ID=57144708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201900622UA SG11201900622UA (en) | 2016-10-12 | 2017-10-10 | Chemically amplified positive photoresist composition and pattern forming method using same |
Country Status (8)
Country | Link |
---|---|
US (1) | US11029599B2 (zh) |
EP (1) | EP3526644B1 (zh) |
JP (1) | JP7317704B2 (zh) |
KR (1) | KR102298153B1 (zh) |
CN (1) | CN109804311B (zh) |
SG (1) | SG11201900622UA (zh) |
TW (1) | TWI744391B (zh) |
WO (1) | WO2018069274A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102656151B1 (ko) * | 2017-09-29 | 2024-04-08 | 니폰 제온 가부시키가이샤 | 포지티브형 레지스트 조성물, 레지스트막 형성 방법, 및 적층체의 제조 방법 |
US20210263414A1 (en) * | 2018-06-22 | 2021-08-26 | Merck Patent Gmbh | A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof |
TWI833992B (zh) * | 2019-10-15 | 2024-03-01 | 美商羅門哈斯電子材料有限公司 | 光致抗蝕劑組成物及圖案形成方法 |
JP2021152646A (ja) * | 2020-03-18 | 2021-09-30 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5861231A (en) | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
JP2001290275A (ja) * | 2000-02-03 | 2001-10-19 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP2004198915A (ja) | 2002-12-20 | 2004-07-15 | Shin Etsu Chem Co Ltd | ポジ型レジスト組成物及びパターン形成方法 |
JP4205078B2 (ja) * | 2005-05-26 | 2009-01-07 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
US20070105040A1 (en) | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
TW200739265A (en) * | 2005-12-06 | 2007-10-16 | Tokyo Ohka Kogyo Co Ltd | Positive photoresist composition and method of forming photoresist pattern using the same |
JP4954576B2 (ja) | 2006-03-15 | 2012-06-20 | 東京応化工業株式会社 | 厚膜レジスト積層体およびその製造方法、レジストパターン形成方法 |
TWI460535B (zh) * | 2007-03-12 | 2014-11-11 | 羅門哈斯電子材料有限公司 | 酚系聚合物及含該酚系聚合物之光阻 |
JP4637221B2 (ja) * | 2007-09-28 | 2011-02-23 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 |
JP5729313B2 (ja) | 2011-01-19 | 2015-06-03 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP5707359B2 (ja) * | 2011-05-30 | 2015-04-30 | 富士フイルム株式会社 | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス |
JP6255717B2 (ja) | 2012-06-08 | 2018-01-10 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5919122B2 (ja) * | 2012-07-27 | 2016-05-18 | 富士フイルム株式会社 | 樹脂組成物及びそれを用いたパターン形成方法 |
JP6200721B2 (ja) * | 2013-08-01 | 2017-09-20 | 富士フイルム株式会社 | パターン形成方法、及びこれを用いた電子デバイスの製造方法 |
JP6238635B2 (ja) * | 2013-08-09 | 2017-11-29 | 東京応化工業株式会社 | 化学増幅型感光性樹脂組成物及びそれを用いたレジストパターンの製造方法 |
US9316900B2 (en) * | 2013-10-11 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process and mask |
JP6432170B2 (ja) * | 2014-06-09 | 2018-12-05 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP6345250B2 (ja) * | 2014-07-31 | 2018-06-20 | 富士フイルム株式会社 | パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス |
US10487205B2 (en) * | 2014-08-08 | 2019-11-26 | Nissan Chemical Industries, Ltd. | Resin composition for flattened film or microlens |
US10527935B2 (en) * | 2016-12-31 | 2020-01-07 | Rohm And Haas Electronic Materials Llc | Radiation-sensitive compositions and patterning and metallization processes |
-
2017
- 2017-10-10 EP EP17778315.6A patent/EP3526644B1/en active Active
- 2017-10-10 SG SG11201900622UA patent/SG11201900622UA/en unknown
- 2017-10-10 JP JP2019519707A patent/JP7317704B2/ja active Active
- 2017-10-10 KR KR1020197013599A patent/KR102298153B1/ko active IP Right Grant
- 2017-10-10 WO PCT/EP2017/075738 patent/WO2018069274A1/en unknown
- 2017-10-10 CN CN201780062691.XA patent/CN109804311B/zh active Active
- 2017-10-10 US US16/340,413 patent/US11029599B2/en active Active
- 2017-10-11 TW TW106134662A patent/TWI744391B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201827928A (zh) | 2018-08-01 |
KR20190062558A (ko) | 2019-06-05 |
JP2019532343A (ja) | 2019-11-07 |
JP7317704B2 (ja) | 2023-07-31 |
WO2018069274A1 (en) | 2018-04-19 |
CN109804311A (zh) | 2019-05-24 |
EP3526644A1 (en) | 2019-08-21 |
TWI744391B (zh) | 2021-11-01 |
EP3526644B1 (en) | 2020-11-25 |
US20190235382A1 (en) | 2019-08-01 |
KR102298153B1 (ko) | 2021-09-08 |
US11029599B2 (en) | 2021-06-08 |
CN109804311B (zh) | 2023-06-06 |
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