SG11201900622UA - Chemically amplified positive photoresist composition and pattern forming method using same - Google Patents

Chemically amplified positive photoresist composition and pattern forming method using same

Info

Publication number
SG11201900622UA
SG11201900622UA SG11201900622UA SG11201900622UA SG11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA
Authority
SG
Singapore
Prior art keywords
international
chihama
kakegawa
shizuoka
shi
Prior art date
Application number
SG11201900622UA
Other languages
English (en)
Inventor
Tetsumasa Takaichi
Shunji Kawato
Masato Suzuki
Kazumichi Akashi
Tomohide Katayama
Original Assignee
Ridgefield Acquisition
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ridgefield Acquisition filed Critical Ridgefield Acquisition
Publication of SG11201900622UA publication Critical patent/SG11201900622UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Detergent Compositions (AREA)
SG11201900622UA 2016-10-12 2017-10-10 Chemically amplified positive photoresist composition and pattern forming method using same SG11201900622UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16002196 2016-10-12
PCT/EP2017/075738 WO2018069274A1 (en) 2016-10-12 2017-10-10 Chemically amplified positive photoresist composition and pattern forming method using same

Publications (1)

Publication Number Publication Date
SG11201900622UA true SG11201900622UA (en) 2019-04-29

Family

ID=57144708

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900622UA SG11201900622UA (en) 2016-10-12 2017-10-10 Chemically amplified positive photoresist composition and pattern forming method using same

Country Status (8)

Country Link
US (1) US11029599B2 (ru)
EP (1) EP3526644B1 (ru)
JP (1) JP7317704B2 (ru)
KR (1) KR102298153B1 (ru)
CN (1) CN109804311B (ru)
SG (1) SG11201900622UA (ru)
TW (1) TWI744391B (ru)
WO (1) WO2018069274A1 (ru)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102656151B1 (ko) * 2017-09-29 2024-04-08 니폰 제온 가부시키가이샤 포지티브형 레지스트 조성물, 레지스트막 형성 방법, 및 적층체의 제조 방법
US20210263414A1 (en) * 2018-06-22 2021-08-26 Merck Patent Gmbh A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof
TWI833992B (zh) * 2019-10-15 2024-03-01 美商羅門哈斯電子材料有限公司 光致抗蝕劑組成物及圖案形成方法
JP2021152646A (ja) * 2020-03-18 2021-09-30 信越化学工業株式会社 レジスト材料及びパターン形成方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
JP2001290275A (ja) * 2000-02-03 2001-10-19 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2004198915A (ja) 2002-12-20 2004-07-15 Shin Etsu Chem Co Ltd ポジ型レジスト組成物及びパターン形成方法
JP4205078B2 (ja) * 2005-05-26 2009-01-07 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
TW200739265A (en) * 2005-12-06 2007-10-16 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming photoresist pattern using the same
JP4954576B2 (ja) 2006-03-15 2012-06-20 東京応化工業株式会社 厚膜レジスト積層体およびその製造方法、レジストパターン形成方法
TWI460535B (zh) * 2007-03-12 2014-11-11 羅門哈斯電子材料有限公司 酚系聚合物及含該酚系聚合物之光阻
JP4637221B2 (ja) * 2007-09-28 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP5729313B2 (ja) 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP5707359B2 (ja) * 2011-05-30 2015-04-30 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP6255717B2 (ja) 2012-06-08 2018-01-10 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5919122B2 (ja) * 2012-07-27 2016-05-18 富士フイルム株式会社 樹脂組成物及びそれを用いたパターン形成方法
JP6200721B2 (ja) * 2013-08-01 2017-09-20 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6238635B2 (ja) * 2013-08-09 2017-11-29 東京応化工業株式会社 化学増幅型感光性樹脂組成物及びそれを用いたレジストパターンの製造方法
US9316900B2 (en) * 2013-10-11 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
JP6432170B2 (ja) * 2014-06-09 2018-12-05 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP6345250B2 (ja) * 2014-07-31 2018-06-20 富士フイルム株式会社 パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス
US10487205B2 (en) * 2014-08-08 2019-11-26 Nissan Chemical Industries, Ltd. Resin composition for flattened film or microlens
US10527935B2 (en) * 2016-12-31 2020-01-07 Rohm And Haas Electronic Materials Llc Radiation-sensitive compositions and patterning and metallization processes

Also Published As

Publication number Publication date
TW201827928A (zh) 2018-08-01
KR20190062558A (ko) 2019-06-05
JP2019532343A (ja) 2019-11-07
JP7317704B2 (ja) 2023-07-31
WO2018069274A1 (en) 2018-04-19
CN109804311A (zh) 2019-05-24
EP3526644A1 (en) 2019-08-21
TWI744391B (zh) 2021-11-01
EP3526644B1 (en) 2020-11-25
US20190235382A1 (en) 2019-08-01
KR102298153B1 (ko) 2021-09-08
US11029599B2 (en) 2021-06-08
CN109804311B (zh) 2023-06-06

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