SG11201810356VA - Method for healing defects in a layer obtained by implantation then detachment from a substrate - Google Patents
Method for healing defects in a layer obtained by implantation then detachment from a substrateInfo
- Publication number
- SG11201810356VA SG11201810356VA SG11201810356VA SG11201810356VA SG11201810356VA SG 11201810356V A SG11201810356V A SG 11201810356VA SG 11201810356V A SG11201810356V A SG 11201810356VA SG 11201810356V A SG11201810356V A SG 11201810356VA SG 11201810356V A SG11201810356V A SG 11201810356VA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- substrate
- implantation
- healing defects
- detachment
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 230000007547 defect Effects 0.000 title abstract 2
- 230000035876 healing Effects 0.000 title abstract 2
- 238000002513 implantation Methods 0.000 title abstract 2
- 229910052726 zirconium Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052716 thallium Inorganic materials 0.000 abstract 2
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052693 Europium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052689 Holmium Inorganic materials 0.000 abstract 1
- 229910052779 Neodymium Inorganic materials 0.000 abstract 1
- 229910052777 Praseodymium Inorganic materials 0.000 abstract 1
- 229910052772 Samarium Inorganic materials 0.000 abstract 1
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/222—Constructional or flow details for analysing fluids
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1654673A FR3051979B1 (fr) | 2016-05-25 | 2016-05-25 | Procede de guerison de defauts dans une couche obtenue par implantation puis detachement d'un substrat |
| PCT/FR2017/051290 WO2017203173A1 (fr) | 2016-05-25 | 2017-05-24 | Procede de guerison de defauts dans une couche obtenue par implantation puis detachement d'un substrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201810356VA true SG11201810356VA (en) | 2018-12-28 |
Family
ID=56557781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201810356VA SG11201810356VA (en) | 2016-05-25 | 2017-05-24 | Method for healing defects in a layer obtained by implantation then detachment from a substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11398595B2 (ko) |
| EP (1) | EP3465787B1 (ko) |
| JP (1) | JP7066638B2 (ko) |
| KR (1) | KR102232158B1 (ko) |
| CN (1) | CN109155358B (ko) |
| FR (1) | FR3051979B1 (ko) |
| SG (1) | SG11201810356VA (ko) |
| WO (1) | WO2017203173A1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180038369A (ko) * | 2016-10-06 | 2018-04-16 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 복합 기판의 제조 방법 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6786967B1 (en) * | 1998-05-11 | 2004-09-07 | California Institute Of Technology | Ion exchange waveguides and methods of fabrication |
| US7548015B2 (en) * | 2000-11-02 | 2009-06-16 | Danfoss A/S | Multilayer composite and a method of making such |
| FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
| EP1271221A1 (en) * | 2001-06-28 | 2003-01-02 | Corning O.T.I. S.p.A. | Integrated optical waveguide device |
| US20030127042A1 (en) * | 2002-01-09 | 2003-07-10 | Der-Hou Tsou | Method of forming high quality waveguides by vapor-phase proton-exchange process with post-thermal annealing and reversed proton-exchange |
| FR2855909B1 (fr) * | 2003-06-06 | 2005-08-26 | Soitec Silicon On Insulator | Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat |
| KR100596391B1 (ko) * | 2004-12-03 | 2006-07-04 | 한국전자통신연구원 | 강유전체/상유전체 다층 박막 및 그 제조 방법과 그를이용한 초고주파 가변 소자 |
| US7566629B2 (en) * | 2005-06-16 | 2009-07-28 | International Business Machines Corporation | Patterned silicon-on-insulator layers and methods for forming the same |
| FR2896255B1 (fr) * | 2006-01-17 | 2008-05-09 | Soitec Silicon On Insulator | Procede d'ajustement de la contrainte d'un substrat en un materiau semi-conducteur |
| WO2009081651A1 (ja) * | 2007-12-25 | 2009-07-02 | Murata Manufacturing Co., Ltd. | 複合圧電基板の製造方法 |
| FR2930072B1 (fr) * | 2008-04-15 | 2010-08-20 | Commissariat Energie Atomique | Procede de transfert d'une couche mince par echange protonique. |
| EP2161741B1 (en) * | 2008-09-03 | 2014-06-11 | Soitec | Method for fabricating a semiconductor on insulator substrate with reduced SECCO defect density |
| JP4582235B2 (ja) * | 2008-10-31 | 2010-11-17 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
| JP4821834B2 (ja) * | 2008-10-31 | 2011-11-24 | 株式会社村田製作所 | 圧電性複合基板の製造方法 |
| US8189981B2 (en) | 2009-11-23 | 2012-05-29 | The Aerospace Corporation | Stable lithium niobate waveguides, and methods of making and using same |
| EP2506431A4 (en) | 2009-11-26 | 2014-02-26 | Murata Manufacturing Co | PIEZOELECTRIC DEVICE AND METHOD FOR PRODUCING THE PIEZOELECTRIC DEVICE |
| FR2972564B1 (fr) * | 2011-03-08 | 2016-11-04 | S O I Tec Silicon On Insulator Tech | Procédé de traitement d'une structure de type semi-conducteur sur isolant |
| FR2977260B1 (fr) * | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
| FR2983342B1 (fr) * | 2011-11-30 | 2016-05-20 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure limitant la formation de defauts et heterostructure ainsi obtenue |
| US9876160B2 (en) * | 2012-03-21 | 2018-01-23 | Parker-Hannifin Corporation | Roll-to-roll manufacturing processes for producing self-healing electroactive polymer devices |
| CN104871431B (zh) * | 2012-12-26 | 2018-04-10 | 日本碍子株式会社 | 复合基板及其制造方法，以及弹性波装置 |
| US10095057B2 (en) * | 2013-10-23 | 2018-10-09 | Honeywell International Inc. | Treatment and/or stabilizing gases in an optical gyro based on an inorganic waveguide |
| WO2016118536A2 (en) * | 2015-01-20 | 2016-07-28 | The Johns Hopkins University | Printable high dielectric constant and self-healable dielectric polymer composition |
| CN104852271A (zh) * | 2015-05-29 | 2015-08-19 | 南京信息工程大学 | 一种波导激光器的制备方法 |
| JP6728630B2 (ja) * | 2015-10-29 | 2020-07-22 | セイコーエプソン株式会社 | 圧電素子、圧電モジュール、電子機器、及び圧電素子の製造方法 |
-
2016
- 2016-05-25 FR FR1654673A patent/FR3051979B1/fr active Active
-
2017
- 2017-05-24 CN CN201780032137.7A patent/CN109155358B/zh active Active
- 2017-05-24 US US16/304,071 patent/US11398595B2/en active Active
- 2017-05-24 JP JP2018561713A patent/JP7066638B2/ja active Active
- 2017-05-24 WO PCT/FR2017/051290 patent/WO2017203173A1/fr unknown
- 2017-05-24 SG SG11201810356VA patent/SG11201810356VA/en unknown
- 2017-05-24 EP EP17732503.2A patent/EP3465787B1/fr active Active
- 2017-05-24 KR KR1020187037414A patent/KR102232158B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| EP3465787B1 (fr) | 2020-03-18 |
| EP3465787A1 (fr) | 2019-04-10 |
| CN109155358B (zh) | 2022-06-03 |
| US20200328342A1 (en) | 2020-10-15 |
| JP7066638B2 (ja) | 2022-05-13 |
| US11398595B2 (en) | 2022-07-26 |
| FR3051979A1 (fr) | 2017-12-01 |
| WO2017203173A1 (fr) | 2017-11-30 |
| KR102232158B1 (ko) | 2021-03-25 |
| FR3051979B1 (fr) | 2018-05-18 |
| CN109155358A (zh) | 2019-01-04 |
| JP2019519154A (ja) | 2019-07-04 |
| KR20190013896A (ko) | 2019-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2015191521A3 (en) | Led package with red-emitting phosphors | |
| JOP20210060A1 (ar) | معدلات لمضاد تريبسين ألفا-1 | |
| Zhang et al. | Possible mechanism for d 0 ferromagnetism mediated by intrinsic defects | |
| Awdankiewicz | Late Palaeozoic lamprophyres and associated mafic subvolcanic rocks of the Sudetes (SW Poland): petrology, geochemistry and petrogenesis | |
| MY185883A (en) | Perovskite material layer processing | |
| TW200737556A (en) | Doped lead tellurides for thermoelectric applications | |
| AU2014245218A8 (en) | Mechanoluminescent material and use applications thereof, raw material composition for mechanoluminescent material, and method for producing mechanoluminescent material | |
| PH12017501409A1 (en) | Substituted 2-thiomidazolyl-carboxamides as pest control agents | |
| SG11201810356VA (en) | Method for healing defects in a layer obtained by implantation then detachment from a substrate | |
| RU2017134273A (ru) | Люминесцентные частицы с защитным слоем и способ получения люминесцентных частиц с защитным слоем | |
| GB201122257D0 (en) | A composition for making a cement or an implant | |
| Budzyń et al. | Monazite Th-U-total Pb geochronology and PT thermodynamic modelling in a revision of the HP-HT metamorphic record in granulites from Stary Gierałtów (NE Orlica-Śnieżnik Dome, SW Poland) | |
| MX2020003037A (es) | Biomaterial que comprende celulas germinales derivadas del tejido adiposo y metodo para su produccion. | |
| Zozulya et al. | Britholite ores of the Sakharjok Zr–Y–REE deposit, Kola Peninsula: Geochemistry, mineralogy, and formation stages | |
| Brański | Climatic disaster at theTriassic–Jurassic bound ary–a clay minerals and major elements record from the Polish Basin | |
| SG11201810354TA (en) | Method for producing a layer | |
| WO2016096555A3 (de) | Zur herstellung von kathoden für li-ionen-akkumulatoren geeignete phosphatverbindungen | |
| EP3632481A4 (en) | PROCESS FOR THE PRODUCTION OF DECELLULARIZED MATERIAL FOR TRANSPLANTATION AND GRAFT COMPOSITION CONSISTING OF A BIOCOMPATIBLE MATERIAL INCLUDING SUCH MATERIAL | |
| Jang et al. | Desalination characteristics for ceramics excavated from Taean shipwreck, Korea | |
| MX2017011321A (es) | Lamina de acero electrica de grano orientado y metodo para la fabricacion de la misma. | |
| BR112017017082A2 (pt) | material inorgânico particulado revestido, usos de um revestimento e de um material particulado inorgânico revestido, produto, e, método de preparação de um material inorgânico particulado revestido. | |
| Oberc-Dziedzic et al. | Last stage of Variscan granitoid magmatism in the Strzelin Massif (SW Poland): petrology and age of the biotite-muscovite granites | |
| MX360440B (es) | Combinacion sinergistica de un compuesto de lenacil y flurocloridona para proteccion de pelicula seca. | |
| Kasper | Preparation of {A2+ 3}[Te2](B2+ 3)-garnets | |
| Lyalina et al. | Multiple crystallization of zircon in the Sakharjok rare-earth element-zirconium deposit, Kola Peninsula |