SG11201808205QA - Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF - Google Patents
Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOFInfo
- Publication number
- SG11201808205QA SG11201808205QA SG11201808205QA SG11201808205QA SG11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA SG 11201808205Q A SG11201808205Q A SG 11201808205QA
- Authority
- SG
- Singapore
- Prior art keywords
- alloy sputtering
- sputtering target
- production method
- target
- oxygen content
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
- B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
- C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016062545 | 2016-03-25 | ||
| PCT/JP2017/011696 WO2017164302A1 (ja) | 2016-03-25 | 2017-03-23 | Ｔｉ－Ｎｂ合金スパッタリングターゲット及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201808205QA true SG11201808205QA (en) | 2018-10-30 |
Family
ID=59900250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201808205QA SG11201808205QA (en) | 2016-03-25 | 2017-03-23 | Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11837449B2 (ko) |
| EP (1) | EP3418422B1 (ko) |
| JP (1) | JP6440866B2 (ko) |
| KR (1) | KR102236414B1 (ko) |
| SG (1) | SG11201808205QA (ko) |
| TW (1) | TWI721139B (ko) |
| WO (1) | WO2017164302A1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111057905B (zh) * | 2020-01-13 | 2022-03-04 | 西安理工大学 | 一种粉末冶金制备铌钛合金的方法 |
| CN113290178B (zh) * | 2021-05-21 | 2022-04-19 | 东莞市诺德金属科技有限公司 | 一种高Nb含量Ti-Nb合金铸锭开坯锻造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5197393A (en) | 1975-02-21 | 1976-08-26 | x senshutsuryokuno seigyohoho | |
| JPH01290766A (ja) | 1988-05-18 | 1989-11-22 | Nippon Mining Co Ltd | Ｔｉ含有高純度Ｔａターゲット及びその製造方法 |
| US5224534A (en) * | 1990-09-21 | 1993-07-06 | Nippon Mining And Metals Company, Limited | Method of producing refractory metal or alloy materials |
| US5102450A (en) * | 1991-08-01 | 1992-04-07 | General Electric Company | Method for melting titanium aluminide alloys in ceramic crucible |
| US6309556B1 (en) * | 1998-09-03 | 2001-10-30 | Praxair S.T. Technology, Inc. | Method of manufacturing enhanced finish sputtering targets |
| US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
| US6331484B1 (en) | 1999-03-29 | 2001-12-18 | Lucent Technologies, Inc. | Titanium-tantalum barrier layer film and method for forming the same |
| JP3445557B2 (ja) | 1999-05-24 | 2003-09-08 | ルーセント テクノロジーズ インコーポレーテッド | チタン−タンタル障壁層薄膜及びその形成方法 |
| JP2001131737A (ja) * | 1999-11-09 | 2001-05-15 | Nikko Materials Co Ltd | スパッタリングターゲット及びその研削方法 |
| TWI256420B (en) * | 2000-04-20 | 2006-06-11 | Toshiba Corp | Sputter target, barrier film and electronic component |
| US20030227068A1 (en) | 2001-05-31 | 2003-12-11 | Jianxing Li | Sputtering target |
| WO2002014576A1 (en) | 2000-08-15 | 2002-02-21 | Honeywell International Inc. | Sputtering target |
| JP3898044B2 (ja) * | 2001-12-03 | 2007-03-28 | 株式会社東芝 | スパッタリングターゲット |
| JP4923933B2 (ja) | 2006-10-10 | 2012-04-25 | 東京エレクトロン株式会社 | バリヤ層の形成方法及びプラズマ成膜装置 |
| WO2010051040A1 (en) * | 2008-11-03 | 2010-05-06 | Tosoh Smd, Inc. | Method of making a sputter target and sputter targets made thereby |
| JP2010123586A (ja) | 2008-11-17 | 2010-06-03 | Nec Electronics Corp | 半導体装置、半導体装置の製造方法 |
| EP2412844A4 (en) * | 2009-03-27 | 2016-12-21 | Jx Nippon Mining & Metals Corp | SPUTTERING TARGET OF A SINTERED TI-NB OXID BODY, TI-NB OXID THIN LAYER AND METHOD FOR PRODUCING THE THIN LAYER |
| JP5550328B2 (ja) * | 2009-12-22 | 2014-07-16 | 株式会社東芝 | Ｍｏスパッタリングターゲットおよびその製造方法 |
| JP5701879B2 (ja) | 2010-07-16 | 2015-04-15 | Jx日鉱日石金属株式会社 | タンタル基焼結体スパッタリングターゲットの製造方法 |
| JP5979927B2 (ja) * | 2012-03-19 | 2016-08-31 | シチズンホールディングス株式会社 | 金色硬質装飾部材 |
-
2017
- 2017-03-23 EP EP17770342.8A patent/EP3418422B1/en active Active
- 2017-03-23 US US16/088,118 patent/US11837449B2/en active Active
- 2017-03-23 JP JP2017555409A patent/JP6440866B2/ja active Active
- 2017-03-23 SG SG11201808205QA patent/SG11201808205QA/en unknown
- 2017-03-23 KR KR1020187026284A patent/KR102236414B1/ko active IP Right Grant
- 2017-03-23 WO PCT/JP2017/011696 patent/WO2017164302A1/ja active Application Filing
- 2017-03-24 TW TW106109928A patent/TWI721139B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3418422A1 (en) | 2018-12-26 |
| WO2017164302A1 (ja) | 2017-09-28 |
| JP6440866B2 (ja) | 2018-12-19 |
| EP3418422B1 (en) | 2022-06-22 |
| US20190115196A1 (en) | 2019-04-18 |
| EP3418422A4 (en) | 2019-10-30 |
| KR102236414B1 (ko) | 2021-04-05 |
| TWI721139B (zh) | 2021-03-11 |
| KR20180110111A (ko) | 2018-10-08 |
| US11837449B2 (en) | 2023-12-05 |
| JPWO2017164302A1 (ja) | 2018-03-29 |
| TW201805461A (zh) | 2018-02-16 |
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