SG11201805682WA - Method and device for producing planar modifications in solid bodies - Google Patents
Method and device for producing planar modifications in solid bodiesInfo
- Publication number
- SG11201805682WA SG11201805682WA SG11201805682WA SG11201805682WA SG11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA
- Authority
- SG
- Singapore
- Prior art keywords
- modifications
- solid
- processing system
- solid bodies
- laser processing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Laser Beam Processing (AREA)
- Silicon Compounds (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016000051.1A DE102016000051A1 (de) | 2016-01-05 | 2016-01-05 | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
PCT/EP2016/080667 WO2017118533A1 (de) | 2016-01-05 | 2016-12-12 | Verfahren und vorrichtung zum planaren erzeugen von modifikationen in festkörpern |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201805682WA true SG11201805682WA (en) | 2018-08-30 |
Family
ID=57680223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201805682WA SG11201805682WA (en) | 2016-01-05 | 2016-12-12 | Method and device for producing planar modifications in solid bodies |
Country Status (13)
Country | Link |
---|---|
US (2) | US11059202B2 (ja) |
EP (1) | EP3400110B1 (ja) |
JP (2) | JP6818755B2 (ja) |
KR (1) | KR102125439B1 (ja) |
CN (1) | CN108472766B (ja) |
BR (1) | BR112018013599A2 (ja) |
CA (1) | CA3010394A1 (ja) |
DE (1) | DE102016000051A1 (ja) |
MX (1) | MX2018009285A (ja) |
MY (1) | MY191384A (ja) |
SG (1) | SG11201805682WA (ja) |
WO (1) | WO2017118533A1 (ja) |
ZA (1) | ZA201804352B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017007586A1 (de) * | 2017-08-11 | 2019-02-14 | Siltectra Gmbh | Fertigungsanlage zum Abtrennen von Wafern von Spendersubstraten |
DE102018005218A1 (de) * | 2018-03-20 | 2019-09-26 | Innolite Gmbh | Verfahren und Vorrichtung zum Verändern eines Materials in einem Volumenkörper |
DE102018119313B4 (de) * | 2018-08-08 | 2023-03-30 | Rogers Germany Gmbh | Verfahren zum Bearbeiten eines Metall-Keramik-Substrats und Anlage zum Durchführen des Verfahrens |
JP7203863B2 (ja) * | 2018-12-21 | 2023-01-13 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
WO2021060365A1 (ja) | 2019-09-27 | 2021-04-01 | 学校法人関西学院 | 半導体基板の製造方法及び半導体基板の製造装置 |
EP4036280A4 (en) | 2019-09-27 | 2023-11-01 | Kwansei Gakuin Educational Foundation | METHOD FOR MANUFACTURING SIC SEMICONDUCTOR DEVICE, AND SIC SEMICONDUCTOR DEVICE |
DE102019217021A1 (de) * | 2019-11-05 | 2021-05-06 | Photon Energy Gmbh | Laserschneidverfahren und zugehörige Laserschneidvorrichtung |
JP7443053B2 (ja) * | 2019-12-26 | 2024-03-05 | 株式会社ディスコ | レーザー加工装置 |
CN111420938B (zh) * | 2020-04-28 | 2022-03-15 | 株洲国创轨道科技有限公司 | 一种多激光头智能化激光清洗方法及装置 |
CN114800899A (zh) * | 2022-04-19 | 2022-07-29 | 广东高景太阳能科技有限公司 | 一种单晶硅片色差改善方法、系统、存储介质及电子设备 |
Family Cites Families (36)
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JP3179140B2 (ja) * | 1991-08-06 | 2001-06-25 | オリンパス光学工業株式会社 | 薄膜の屈折率測定装置 |
JP2548846Y2 (ja) | 1991-10-31 | 1997-09-24 | 日野自動車工業株式会社 | 車両用前部表示装置 |
JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
JP2005028423A (ja) * | 2003-07-09 | 2005-02-03 | Disco Abrasive Syst Ltd | レーザー加工方法およびレーザー加工装置 |
GB0328370D0 (en) * | 2003-12-05 | 2004-01-14 | Southampton Photonics Ltd | Apparatus for providing optical radiation |
JP2005294325A (ja) * | 2004-03-31 | 2005-10-20 | Sharp Corp | 基板製造方法及び基板製造装置 |
JP4421972B2 (ja) * | 2004-04-30 | 2010-02-24 | 日東電工株式会社 | 半導体装置の製法 |
FR2870988B1 (fr) | 2004-06-01 | 2006-08-11 | Michel Bruel | Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation |
KR100821937B1 (ko) | 2004-10-25 | 2008-04-15 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | 크랙 형성방법 및 크랙 형성장치 |
IL174590A (en) * | 2005-03-29 | 2015-03-31 | Yoel Arieli | A method and an imaging system for the analysis of optical properties of an object illuminated by a light source |
US8835802B2 (en) | 2006-01-24 | 2014-09-16 | Stephen C. Baer | Cleaving wafers from silicon crystals |
MX2010004896A (es) * | 2007-11-02 | 2010-07-29 | Harvard College | Produccion de capas de estado solido independientes mediante procesamiento termico de sustratos con un polimero. |
JP2009140959A (ja) * | 2007-12-03 | 2009-06-25 | Tokyo Seimitsu Co Ltd | レーザーダイシング装置及びダイシング方法 |
WO2010072675A2 (en) | 2008-12-23 | 2010-07-01 | Pfeffer, Christian | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
GB0900036D0 (en) | 2009-01-03 | 2009-02-11 | M Solv Ltd | Method and apparatus for forming grooves with complex shape in the surface of apolymer |
EP2210696A1 (en) * | 2009-01-26 | 2010-07-28 | Excico France | Method and apparatus for irradiating a semiconductor material surface by laser energy |
SG173283A1 (en) * | 2010-01-26 | 2011-08-29 | Semiconductor Energy Lab | Method for manufacturing soi substrate |
DE102010020183B4 (de) * | 2010-05-11 | 2013-07-11 | Precitec Kg | Laserschneidkopf und Verfahren zum Schneiden eines Werkstücks mittels eines Laserschneidkopfes |
WO2011151468A1 (en) * | 2010-06-04 | 2011-12-08 | Imec | Method for determining the active doping concentration of a doped semiconductor region |
RU2459691C2 (ru) * | 2010-11-29 | 2012-08-27 | Юрий Георгиевич Шретер | Способ отделения поверхностного слоя полупроводникового кристалла (варианты) |
EP2687317B1 (de) * | 2012-07-20 | 2020-05-06 | Bystronic Laser AG | Laserbearbeitungsmaschine, insbesondere Laserschneidmaschine, sowie Verfahren zum Justieren eines fokussierten Laserstrahles |
JP2013120918A (ja) | 2011-12-09 | 2013-06-17 | Nippon Telegr & Teleph Corp <Ntt> | 評価方法 |
KR20140140053A (ko) | 2012-02-26 | 2014-12-08 | 솔렉셀, 인크. | 레이저 분할 및 디바이스 층 전사를 위한 시스템 및 방법 |
JP2013181929A (ja) * | 2012-03-04 | 2013-09-12 | Canon Inc | 測定装置及び方法、トモグラフィ装置及び方法 |
JP6121733B2 (ja) * | 2013-01-31 | 2017-04-26 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
US9070660B2 (en) * | 2013-03-15 | 2015-06-30 | Intel Corporation | Polymer thermal interface material having enhanced thermal conductivity |
DE102013007672A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle |
DE102013218421A1 (de) * | 2013-09-13 | 2015-04-02 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Vorrichtung und Verfahren zur Überwachung, insbesondere zur Regelung, eines Schneidprozesses |
JP6531885B2 (ja) | 2013-10-07 | 2019-06-19 | 信越ポリマー株式会社 | 内部加工層形成単結晶部材およびその製造方法 |
DE102014013107A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
DE102014014486A1 (de) * | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
DE102013016669A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Kombiniertes Herstellungsverfahren zum Abtrennen mehrerer dünner Festkörperschichten von einem dicken Festkörper |
US10121667B2 (en) * | 2014-11-12 | 2018-11-06 | President And Fellows Of Harvard College | Creation of hyperdoped semiconductors with concurrent high crystallinity and high sub-bandgap absorptance using nanosecond laser annealing |
JP6494382B2 (ja) | 2015-04-06 | 2019-04-03 | 株式会社ディスコ | ウエーハの生成方法 |
US11309191B2 (en) * | 2018-08-07 | 2022-04-19 | Siltectra Gmbh | Method for modifying substrates based on crystal lattice dislocation density |
-
2016
- 2016-01-05 DE DE102016000051.1A patent/DE102016000051A1/de not_active Withdrawn
- 2016-12-12 EP EP16819470.2A patent/EP3400110B1/de active Active
- 2016-12-12 CN CN201680078011.9A patent/CN108472766B/zh active Active
- 2016-12-12 SG SG11201805682WA patent/SG11201805682WA/en unknown
- 2016-12-12 US US16/067,946 patent/US11059202B2/en active Active
- 2016-12-12 CA CA3010394A patent/CA3010394A1/en not_active Abandoned
- 2016-12-12 BR BR112018013599A patent/BR112018013599A2/pt not_active Application Discontinuation
- 2016-12-12 MY MYPI2018702318A patent/MY191384A/en unknown
- 2016-12-12 WO PCT/EP2016/080667 patent/WO2017118533A1/de active Application Filing
- 2016-12-12 MX MX2018009285A patent/MX2018009285A/es unknown
- 2016-12-12 JP JP2018534125A patent/JP6818755B2/ja active Active
- 2016-12-12 KR KR1020187022290A patent/KR102125439B1/ko active IP Right Grant
-
2018
- 2018-06-28 ZA ZA2018/04352A patent/ZA201804352B/en unknown
-
2020
- 2020-12-28 JP JP2020219346A patent/JP7271501B2/ja active Active
-
2021
- 2021-06-09 US US17/343,219 patent/US20210299910A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2021061435A (ja) | 2021-04-15 |
KR102125439B1 (ko) | 2020-06-22 |
CN108472766B (zh) | 2021-02-09 |
MX2018009285A (es) | 2019-02-28 |
US20210299910A1 (en) | 2021-09-30 |
BR112018013599A2 (pt) | 2019-01-08 |
EP3400110B1 (de) | 2021-04-07 |
EP3400110A1 (de) | 2018-11-14 |
US11059202B2 (en) | 2021-07-13 |
DE102016000051A1 (de) | 2017-07-06 |
JP2019500220A (ja) | 2019-01-10 |
CA3010394A1 (en) | 2017-07-13 |
KR20180100063A (ko) | 2018-09-06 |
JP6818755B2 (ja) | 2021-01-20 |
JP7271501B2 (ja) | 2023-05-11 |
WO2017118533A1 (de) | 2017-07-13 |
MY191384A (en) | 2022-06-22 |
US20190366586A1 (en) | 2019-12-05 |
ZA201804352B (en) | 2019-06-26 |
CN108472766A (zh) | 2018-08-31 |
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