SG11201805682WA - Method and device for producing planar modifications in solid bodies - Google Patents

Method and device for producing planar modifications in solid bodies

Info

Publication number
SG11201805682WA
SG11201805682WA SG11201805682WA SG11201805682WA SG11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA SG 11201805682W A SG11201805682W A SG 11201805682WA
Authority
SG
Singapore
Prior art keywords
modifications
solid
processing system
solid bodies
laser processing
Prior art date
Application number
SG11201805682WA
Inventor
Ralf Rieske
Christian Beyer
Christoph Günther
Jan Richter
Marko Swoboda
Original Assignee
Siltectra Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltectra Gmbh filed Critical Siltectra Gmbh
Publication of SG11201805682WA publication Critical patent/SG11201805682WA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Silicon Compounds (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

The present invention relates to a method for creating modifications in a solid state, wherein a crack guidance region for guiding a crack for separating a solid-state portion, in particular a solid-state layer, from the solid state body, is predetermined by the modifications. The method according to the invention preferably comprises the steps: Moving the solid state () relative to a laser processing system, then generating a plurality of laser beams by means of the laser processing system for creating at least one modification, wherein the laser processing system is adjusted for defined focusing of the laser beams continuously as a function of a plurality of parameters, in particular at least two parameters. (Fig. 1) 40
SG11201805682WA 2016-01-05 2016-12-12 Method and device for producing planar modifications in solid bodies SG11201805682WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016000051.1A DE102016000051A1 (en) 2016-01-05 2016-01-05 Method and apparatus for planar generation of modifications in solids
PCT/EP2016/080667 WO2017118533A1 (en) 2016-01-05 2016-12-12 Method and device for producing planar modifications in solid bodies

Publications (1)

Publication Number Publication Date
SG11201805682WA true SG11201805682WA (en) 2018-08-30

Family

ID=57680223

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201805682WA SG11201805682WA (en) 2016-01-05 2016-12-12 Method and device for producing planar modifications in solid bodies

Country Status (13)

Country Link
US (2) US11059202B2 (en)
EP (1) EP3400110B1 (en)
JP (2) JP6818755B2 (en)
KR (1) KR102125439B1 (en)
CN (1) CN108472766B (en)
BR (1) BR112018013599A2 (en)
CA (1) CA3010394A1 (en)
DE (1) DE102016000051A1 (en)
MX (1) MX2018009285A (en)
MY (1) MY191384A (en)
SG (1) SG11201805682WA (en)
WO (1) WO2017118533A1 (en)
ZA (1) ZA201804352B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018005218A1 (en) * 2018-03-20 2019-09-26 Innolite Gmbh Method and device for modifying a material in a solid
DE102018119313B4 (en) * 2018-08-08 2023-03-30 Rogers Germany Gmbh Process for processing a metal-ceramic substrate and installation for carrying out the process
CN113165109B (en) * 2018-12-21 2023-06-27 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
WO2021060366A1 (en) 2019-09-27 2021-04-01 学校法人関西学院 Method of manufacturing sic semiconductor device and sic semiconductor device
WO2021060365A1 (en) 2019-09-27 2021-04-01 学校法人関西学院 Method for producing semiconductor substrates and device for producing semiconductor substrates
DE102019217021A1 (en) * 2019-11-05 2021-05-06 Photon Energy Gmbh Laser cutting process and associated laser cutting device
JP7443053B2 (en) 2019-12-26 2024-03-05 株式会社ディスコ laser processing equipment
CN111420938B (en) * 2020-04-28 2022-03-15 株洲国创轨道科技有限公司 Intelligent laser cleaning method and device for multiple laser heads
CN114800899A (en) * 2022-04-19 2022-07-29 广东高景太阳能科技有限公司 Monocrystalline silicon wafer color difference improving method and system, storage medium and electronic equipment

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179140B2 (en) * 1991-08-06 2001-06-25 オリンパス光学工業株式会社 Thin film refractive index measuring device
JP2548846Y2 (en) 1991-10-31 1997-09-24 日野自動車工業株式会社 Front display for vehicle
JP4659300B2 (en) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 Laser processing method and semiconductor chip manufacturing method
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP2005028423A (en) * 2003-07-09 2005-02-03 Disco Abrasive Syst Ltd Laser beam machining method and device
GB0328370D0 (en) * 2003-12-05 2004-01-14 Southampton Photonics Ltd Apparatus for providing optical radiation
JP2005294325A (en) * 2004-03-31 2005-10-20 Sharp Corp Method and apparatus for manufacturing substrate
JP4421972B2 (en) * 2004-04-30 2010-02-24 日東電工株式会社 Manufacturing method of semiconductor devices
FR2870988B1 (en) * 2004-06-01 2006-08-11 Michel Bruel METHOD FOR MAKING A MULTI-LAYER STRUCTURE COMPRISING, IN DEPTH, A SEPARATION LAYER
KR100821937B1 (en) 2004-10-25 2008-04-15 미쓰보시 다이야몬도 고교 가부시키가이샤 Method and device for forming crack
IL174590A (en) * 2005-03-29 2015-03-31 Yoel Arieli Method and imaging system for analyzing optical properties of an object illuminated by a light source
WO2007087354A2 (en) 2006-01-24 2007-08-02 Baer Stephen C Cleaving wafers from silicon crystals
WO2009061353A2 (en) 2007-11-02 2009-05-14 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
JP2009140959A (en) 2007-12-03 2009-06-25 Tokyo Seimitsu Co Ltd Laser dicing device and dicing method
US8877077B2 (en) * 2008-12-23 2014-11-04 Siltectra Gmbh Method for producing thin, free-standing layers of solid state materials with structured surfaces
GB0900036D0 (en) * 2009-01-03 2009-02-11 M Solv Ltd Method and apparatus for forming grooves with complex shape in the surface of apolymer
EP2210696A1 (en) * 2009-01-26 2010-07-28 Excico France Method and apparatus for irradiating a semiconductor material surface by laser energy
US8367517B2 (en) * 2010-01-26 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
DE102010020183B4 (en) * 2010-05-11 2013-07-11 Precitec Kg Laser cutting head and method for cutting a workpiece by means of a laser cutting head
JP5847809B2 (en) * 2010-06-04 2016-01-27 アイメックＩｍｅｃ Method for determining the active doping concentration of doped semiconductor regions
RU2459691C2 (en) * 2010-11-29 2012-08-27 Юрий Георгиевич Шретер Method of separating surface layer of semiconductor chip (versions)
EP2687317B1 (en) * 2012-07-20 2020-05-06 Bystronic Laser AG Laser processing machine, in particular laser cutting machine and method for adjusting a focused laser beam
JP2013120918A (en) 2011-12-09 2013-06-17 Nippon Telegr & Teleph Corp <Ntt> Evaluation method
AU2013222069A1 (en) 2012-02-26 2014-10-16 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP2013181929A (en) * 2012-03-04 2013-09-12 Canon Inc Measuring apparatus and method, tomography device and method
JP6121733B2 (en) * 2013-01-31 2017-04-26 浜松ホトニクス株式会社 Laser processing apparatus and laser processing method
US9070660B2 (en) * 2013-03-15 2015-06-30 Intel Corporation Polymer thermal interface material having enhanced thermal conductivity
DE102013007672A1 (en) 2013-05-03 2014-11-06 Siltectra Gmbh Process and apparatus for wafer production with predefined breakaway release point
DE102013218421A1 (en) 2013-09-13 2015-04-02 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Apparatus and method for monitoring, in particular for controlling, a cutting process
JP6531885B2 (en) 2013-10-07 2019-06-19 信越ポリマー株式会社 Internally processed layer forming single crystal member and method of manufacturing the same
DE102014014486A1 (en) * 2013-10-08 2015-04-09 Siltectra Gmbh Novel wafer manufacturing process
DE102013016669A1 (en) 2013-10-08 2015-04-09 Siltectra Gmbh Combined manufacturing process for separating a plurality of thin solid layers from a thick solid
DE102014013107A1 (en) 2013-10-08 2015-04-09 Siltectra Gmbh Novel wafer manufacturing process
WO2016077587A2 (en) * 2014-11-12 2016-05-19 President And Fellows Of Harvard College Creation of hyperdoped semiconductors with concurrent high crystallinity and high sub-bandgap absorptance using nanosecond laser annealing
JP6494382B2 (en) 2015-04-06 2019-04-03 株式会社ディスコ Wafer generation method
US11309191B2 (en) * 2018-08-07 2022-04-19 Siltectra Gmbh Method for modifying substrates based on crystal lattice dislocation density

Also Published As

Publication number Publication date
JP7271501B2 (en) 2023-05-11
BR112018013599A2 (en) 2019-01-08
WO2017118533A1 (en) 2017-07-13
DE102016000051A1 (en) 2017-07-06
ZA201804352B (en) 2019-06-26
CN108472766B (en) 2021-02-09
JP2021061435A (en) 2021-04-15
US11059202B2 (en) 2021-07-13
CN108472766A (en) 2018-08-31
CA3010394A1 (en) 2017-07-13
JP2019500220A (en) 2019-01-10
US20190366586A1 (en) 2019-12-05
KR20180100063A (en) 2018-09-06
KR102125439B1 (en) 2020-06-22
US20210299910A1 (en) 2021-09-30
EP3400110B1 (en) 2021-04-07
JP6818755B2 (en) 2021-01-20
MX2018009285A (en) 2019-02-28
EP3400110A1 (en) 2018-11-14
MY191384A (en) 2022-06-22

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