SG11201804874WA - Semiconductor wafer made of single-crystal silicon and process for the production thereof - Google Patents
Semiconductor wafer made of single-crystal silicon and process for the production thereofInfo
- Publication number
- SG11201804874WA SG11201804874WA SG11201804874WA SG11201804874WA SG11201804874WA SG 11201804874W A SG11201804874W A SG 11201804874WA SG 11201804874W A SG11201804874W A SG 11201804874WA SG 11201804874W A SG11201804874W A SG 11201804874WA SG 11201804874W A SG11201804874W A SG 11201804874WA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafer
- crystal silicon
- wafer made
- production
- density
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 201000006935 Becker muscular dystrophy Diseases 0.000 abstract 2
- 208000037663 Best vitelliform macular dystrophy Diseases 0.000 abstract 2
- 208000020938 vitelliform macular dystrophy 2 Diseases 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015224983.2A DE102015224983B4 (de) | 2015-12-11 | 2015-12-11 | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
PCT/EP2016/079572 WO2017097675A1 (de) | 2015-12-11 | 2016-12-02 | Halbleiterscheibe aus einkristallinem silizium und verfahren zu deren herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201804874WA true SG11201804874WA (en) | 2018-07-30 |
Family
ID=57482408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201804874WA SG11201804874WA (en) | 2015-12-11 | 2016-12-02 | Semiconductor wafer made of single-crystal silicon and process for the production thereof |
Country Status (9)
Country | Link |
---|---|
US (1) | US10844515B2 (de) |
EP (1) | EP3387166B1 (de) |
JP (1) | JP6599009B2 (de) |
KR (1) | KR102084872B1 (de) |
CN (1) | CN108368638B (de) |
DE (1) | DE102015224983B4 (de) |
SG (1) | SG11201804874WA (de) |
TW (1) | TWI607122B (de) |
WO (1) | WO2017097675A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6711320B2 (ja) * | 2017-06-26 | 2020-06-17 | 株式会社Sumco | シリコンウェーハ |
EP3428325B1 (de) | 2017-07-10 | 2019-09-11 | Siltronic AG | Aus einkristallsilicium hergestellter halbleiter-wafer und verfahren zur herstellung davon |
JP7057122B2 (ja) | 2017-12-22 | 2022-04-19 | グローバルウェーハズ・ジャパン株式会社 | 金属汚染評価方法 |
CN111996594B (zh) * | 2020-09-01 | 2021-09-28 | 晶科能源股份有限公司 | 镓、氢、氮掺杂单晶硅及其制备方法、太阳能电池 |
CN112144117B (zh) * | 2020-09-15 | 2023-05-02 | 新疆晶科能源有限公司 | 氢、磷、氮掺杂单晶硅及其制备方法、太阳能电池 |
US11618971B2 (en) * | 2020-09-29 | 2023-04-04 | Sumco Corporation | Method and apparatus for manufacturing defect-free monocrystalline silicon crystal |
CN115233293A (zh) * | 2022-07-25 | 2022-10-25 | 北京麦竹吉科技有限公司 | 一种轻掺p型硅单晶及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100508048B1 (ko) | 1997-04-09 | 2005-08-17 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 저결함 밀도 실리콘 잉곳의 제조 방법 |
US8529695B2 (en) * | 2000-11-22 | 2013-09-10 | Sumco Corporation | Method for manufacturing a silicon wafer |
DE10339792B4 (de) * | 2003-03-27 | 2014-02-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
KR20060040733A (ko) | 2003-08-12 | 2006-05-10 | 신에쯔 한도타이 가부시키가이샤 | 웨이퍼의 제조방법 |
DE102004041378B4 (de) * | 2004-08-26 | 2010-07-08 | Siltronic Ag | Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung |
JP4797477B2 (ja) | 2005-04-08 | 2011-10-19 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP4743010B2 (ja) * | 2005-08-26 | 2011-08-10 | 株式会社Sumco | シリコンウェーハの表面欠陥評価方法 |
JP5072460B2 (ja) * | 2006-09-20 | 2012-11-14 | ジルトロニック アクチエンゲゼルシャフト | 半導体用シリコンウエハ、およびその製造方法 |
DE102008046617B4 (de) * | 2008-09-10 | 2016-02-04 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung |
JP2010100474A (ja) * | 2008-10-23 | 2010-05-06 | Covalent Materials Corp | シリコン単結晶引上げ水平磁場の最適化方法およびシリコン単結晶の製造方法 |
EP2309038B1 (de) | 2009-10-08 | 2013-01-02 | Siltronic AG | Herstellungsverfahren eines Epitaxial-Wafers |
DE102010063728B4 (de) | 2009-12-28 | 2016-04-14 | Fuji Electric Co., Ltd. | Halbleitervorrichtung mit verbesserter Sperrspannungsfestigkeit |
EP2345752B1 (de) * | 2009-12-29 | 2012-02-15 | Siltronic AG | Siliciumwafer und Herstellungsverfahren dafür |
JP2013129564A (ja) * | 2011-12-21 | 2013-07-04 | Siltronic Ag | シリコン単結晶基板およびその製造方法 |
JP2013163598A (ja) | 2012-01-10 | 2013-08-22 | Globalwafers Japan Co Ltd | シリコンウェーハの製造方法 |
DE102012214085B4 (de) * | 2012-08-08 | 2016-07-07 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
JP6652959B2 (ja) * | 2014-07-31 | 2020-02-26 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 窒素ドープされた空孔優勢であるシリコンインゴット、およびそれから形成された半径方向に均一に分布した酸素析出の密度およびサイズを有する熱処理されたウエハ |
-
2015
- 2015-12-11 DE DE102015224983.2A patent/DE102015224983B4/de not_active Withdrawn - After Issue
-
2016
- 2016-12-02 JP JP2018530029A patent/JP6599009B2/ja active Active
- 2016-12-02 WO PCT/EP2016/079572 patent/WO2017097675A1/de active Application Filing
- 2016-12-02 KR KR1020187015494A patent/KR102084872B1/ko active IP Right Grant
- 2016-12-02 EP EP16805805.5A patent/EP3387166B1/de active Active
- 2016-12-02 CN CN201680072509.4A patent/CN108368638B/zh active Active
- 2016-12-02 SG SG11201804874WA patent/SG11201804874WA/en unknown
- 2016-12-02 US US15/780,196 patent/US10844515B2/en active Active
- 2016-12-06 TW TW105140190A patent/TWI607122B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN108368638B (zh) | 2021-03-09 |
US10844515B2 (en) | 2020-11-24 |
KR20180080271A (ko) | 2018-07-11 |
WO2017097675A1 (de) | 2017-06-15 |
JP6599009B2 (ja) | 2019-10-30 |
CN108368638A (zh) | 2018-08-03 |
EP3387166B1 (de) | 2020-11-18 |
EP3387166A1 (de) | 2018-10-17 |
JP2019503960A (ja) | 2019-02-14 |
KR102084872B1 (ko) | 2020-03-04 |
DE102015224983A1 (de) | 2017-06-14 |
US20180371639A1 (en) | 2018-12-27 |
TW201720972A (zh) | 2017-06-16 |
DE102015224983B4 (de) | 2019-01-24 |
TWI607122B (zh) | 2017-12-01 |
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