SG11201706020QA - Substrate support with improved rf return - Google Patents

Substrate support with improved rf return

Info

Publication number
SG11201706020QA
SG11201706020QA SG11201706020QA SG11201706020QA SG11201706020QA SG 11201706020Q A SG11201706020Q A SG 11201706020QA SG 11201706020Q A SG11201706020Q A SG 11201706020QA SG 11201706020Q A SG11201706020Q A SG 11201706020QA SG 11201706020Q A SG11201706020Q A SG 11201706020QA
Authority
SG
Singapore
Prior art keywords
return
improved
substrate support
substrate
support
Prior art date
Application number
SG11201706020QA
Other languages
English (en)
Inventor
Aravind Miyar Kamath
Cheng-Hsiung Tsai
Jallepally Ravi
Tomoharu Matsushita
Yu Chang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201706020QA publication Critical patent/SG11201706020QA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201706020QA 2015-02-13 2016-02-11 Substrate support with improved rf return SG11201706020QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562116218P 2015-02-13 2015-02-13
US15/019,573 US10134615B2 (en) 2015-02-13 2016-02-09 Substrate support with improved RF return
PCT/US2016/017452 WO2016130744A1 (en) 2015-02-13 2016-02-11 Substrate support with improved rf return

Publications (1)

Publication Number Publication Date
SG11201706020QA true SG11201706020QA (en) 2017-09-28

Family

ID=56615690

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201706020QA SG11201706020QA (en) 2015-02-13 2016-02-11 Substrate support with improved rf return

Country Status (7)

Country Link
US (1) US10134615B2 (https=)
JP (1) JP6843752B2 (https=)
KR (1) KR102537310B1 (https=)
CN (1) CN107210180B (https=)
SG (1) SG11201706020QA (https=)
TW (1) TWI691014B (https=)
WO (1) WO2016130744A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
JP6762184B2 (ja) 2016-09-26 2020-09-30 株式会社Ｓｃｒｅｅｎホールディングス 回収配管洗浄方法および基板処理装置
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020022403A1 (en) * 1999-08-06 2002-02-21 Wing L. Cheng Connectors for an eletrostatic chuck
JP3718093B2 (ja) * 2000-01-20 2005-11-16 ローム株式会社 半導体製造装置
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
US20080179011A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with wide process window employing plural vhf sources
KR101006848B1 (ko) * 2008-05-28 2011-01-14 주식회사 코미코 기판 지지 장치 및 이를 포함하는 기판 처리 장치
KR20100004857A (ko) * 2008-07-03 2010-01-13 주성엔지니어링(주) 건식 에칭 장치
US20100000684A1 (en) 2008-07-03 2010-01-07 Jong Yong Choi Dry etching apparatus
KR102285582B1 (ko) * 2009-08-31 2021-08-03 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
JP2012234951A (ja) * 2011-04-28 2012-11-29 Mitsubishi Heavy Ind Ltd 真空処理装置およびその電極面間隔調整方法
US8618446B2 (en) * 2011-06-30 2013-12-31 Applied Materials, Inc. Substrate support with substrate heater and symmetric RF return
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9340866B2 (en) * 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9404176B2 (en) 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path

Also Published As

Publication number Publication date
CN107210180A (zh) 2017-09-26
TWI691014B (zh) 2020-04-11
JP6843752B2 (ja) 2021-03-17
TW201703182A (zh) 2017-01-16
US20160240426A1 (en) 2016-08-18
KR20170117510A (ko) 2017-10-23
KR102537310B1 (ko) 2023-05-25
US10134615B2 (en) 2018-11-20
CN107210180B (zh) 2019-12-13
WO2016130744A1 (en) 2016-08-18
JP2018508994A (ja) 2018-03-29

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